Abstract: There is provided an insulator target which, when mounted on a sputtering apparatus and supplied with AC power, is capable of preventing the discharging from occurring in a clearance between a shield and the target. The insulator target for the sputtering apparatus according to this invention, around which is disposed a shield at the time of assembling the insulator target on the sputtering apparatus, is made up of: a plate-shaped target material to be enclosed by the shield; and, suppose that one surface of the target material is defined as a sputtering surface to be subjected to sputtering, an annular supporting material coupled to an outer peripheral portion of the opposite surface of the target material. The supporting material has an extended portion which is extended outward from a peripheral surface of the target material and which keeps a predetermined clearance to the shield.

Abstract: A microwave-excited plasma processing apparatus shows a wide pressure range and a wide applicable electric power range for normal electric discharges as a result of using slits cut through a rectangular waveguide and having a profile that allows the electric field and the magnetic field of microwave to be formed uniformly right below the microwave introducing window below an microwave antenna. The microwave-excited plasma processing apparatus is characterized by having four elliptic slits cut through the wall of the rectangular waveguide that is held in contact with the microwave introducing window of the top wall of the vacuum chamber, the four elliptic slits being arranged respectively along the four sides of a substantial square.

Abstract: A microwave-excited plasma processing apparatus shows a wide pressure range and a wide applicable electric power range for normal electric discharges as a result of using slits cut through a rectangular waveguide and having a profile that allows the electric field and the magnetic field of microwave to be formed uniformly right below the microwave introducing window below an microwave antenna. The microwave-excited plasma processing apparatus is characterized by having four elliptic slits cut through the wall of the rectangular waveguide that is held in contact with the microwave introducing window of the top wall of the vacuum chamber, the four elliptic slits being arranged respectively along the four sides of a substantial square.

Abstract: This invention provides a filming method for covering the surface of the insulating film of a semiconductor substrate with a copper interconnect film free from pores. The surface of the insulating film 2 of a semiconductor substrate 1 is filmed with a copper or copper alloy 3 by any one of plating, CVD and PVD, and the whole body is then heated under a high-pressure gas atmosphere to cover the surface with an interconnect film 4 free from pores.