Patents by Inventor Yoji Teramoto

Yoji Teramoto has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7583016
    Abstract: The invention is to provide a producing method for an electron emitting device of field emission type, having sufficient on/off characteristics and capable of efficient electron emission at a low voltage. There is provided a producing method for an electron emitting device including steps of preparing a plurality of electroconductive particles each covered with an insulation material having a thickness of 10 nm or less at least on a part of a surface of the particle, and forming a dipole layer on a surface of the insulation material covering each of the plurality of electroconductive particles.
    Type: Grant
    Filed: December 8, 2005
    Date of Patent: September 1, 2009
    Assignee: Canon Kabushiki Kaisha
    Inventors: Michiyo Nishimura, Yoji Teramoto, Ryoji Fujiwara
  • Publication number: 20090153013
    Abstract: A method for manufacturing an electron-emitting device according to the present invention includes a step of preparing a carbon layer containing conductive metallic particles, a step of oxidizing a portion the conductive metallic particles, and a step of forming a dipole layer on a surface of the carbon layer. An electron-emitting device according to the present invention is manufactured by the manufacturing method for the electron-emitting device. An electron source according to the present invention includes a plurality of the electron-emitting devices. An image display apparatus according to the present invention includes the electron source and a image forming member which forms an image by an electron emitted from the electron source.
    Type: Application
    Filed: December 9, 2008
    Publication date: June 18, 2009
    Applicant: CANON KABUSHIKI KAISHA
    Inventors: Michiyo Nishimura, Ryoji Fujiwara, Yoji Teramoto, Kazushi Nomura, Shunsuke Murakami
  • Publication number: 20090153014
    Abstract: An electron-emitting device according to the present invention is an electron-emitting device having a cathode electrode, an insulating film provided on the cathode electrode, and a dipole layer provided on the insulating film, wherein the dipole layer is formed by terminating the insulating film with an NH group. An electron source according to the present invention has a plurality of the electron-emitting devices. An image display apparatus according to the present invention has the electron source and a light emitting member that emits light by irradiation with electrons.
    Type: Application
    Filed: December 9, 2008
    Publication date: June 18, 2009
    Applicant: CANON KABUSHIKI KAISHA
    Inventors: Kazushi Nomura, Ryoji Fujiwara, Michiyo Nishimura, Yoji Teramoto, Shunsuke Murakami
  • Publication number: 20090140627
    Abstract: An electron-emitting device according to this invention has a cathode electrode, a first electrode, a second electrode, an insulating layer, a gate electrode, and an electron-emitting member. The gate electrode, the insulating layer, and the first electrode respectively have an opening communicating with each other. The electron-emitting member is provided on the cathode electrode, and at least a portion of the electron-emitting member is exposed in the opening. The second electrode is provided in the opening of the first electrode and electrically connected to the cathode electrode.
    Type: Application
    Filed: December 4, 2008
    Publication date: June 4, 2009
    Applicant: CANON KABUSHIKI KAISHA
    Inventors: Yoji Teramoto, Ryoji Fujiwara, Michiyo Nishimura, Kazushi Nomura, Shunsuke Murakami
  • Publication number: 20090117811
    Abstract: A manufacturing method of an electron-emitting device according to a present invention including the steps of: preparing a substrate having a carbon film, and a terminating a surface of the carbon film with hydrogen by irradiating a light or particle beam locally to a part of the carbon film in an atmosphere including hydrocarbon or hydrogen or in an atmosphere including both hydrocarbon and hydrogen.
    Type: Application
    Filed: October 31, 2008
    Publication date: May 7, 2009
    Applicant: CANON KABUSHIKI KAISHA
    Inventors: Ryoji Fujiwara, Michiyo Nishimura, Yoji Teramoto, Kazushi Nomura, Shunsuke Murakami
  • Publication number: 20090111350
    Abstract: A manufacturing method of an electron-emitting device including the steps of: preparing a base substrate provided with an insulating or semi-conducting layer in advance and exposing the layer to an atmosphere which contains neutral radical containing hydrogen. It is preferable that the insulating or semi-conducting layer contains metal particles; the insulating or semi-conducting layer is a film containing carbon as a main component; the neutral radical containing hydrogen contains any of H., CH3., C2H5., and C2H. or mixture gas thereof; compared with a density of a charged particle in the atmosphere, a density of the neutral radical containing hydrogen in the atmosphere is more than 1,000 times; and a step of exposing the insulating or semi-conducting layer to the atmosphere is a step of making a hydrogen termination by using a plasma apparatus provided with a bias grid.
    Type: Application
    Filed: October 17, 2008
    Publication date: April 30, 2009
    Applicant: CANON KABUSHIKI KAISHA
    Inventors: Yoji Teramoto, Ryoji Fujiwara, Michiyo Nishimura, Kazushi Nomura, Shunsuke Murakami
  • Publication number: 20090108727
    Abstract: An electron-emitting device according to the present invention is characterized by that a gate electrode is located above a cathode electrode; a insulating member is located between the gate electrode and the cathode electrode; and the gate electrode and the insulating member are provided with openings, respectively, the openings being communicated with each other, wherein the insulating member is formed by layering three or more insulating layers including a first insulating layer, which is brought in contact with the gate electrode and has an opening, of which size is approximately the same as the size of the opening of the gate electrode; and a second insulating layer, which is located nearer to the side of the cathode electrode than the first insulating layer and has a larger opening than the opening of the gate electrode.
    Type: Application
    Filed: October 21, 2008
    Publication date: April 30, 2009
    Applicant: CANON KABUSHIKI KAISHA
    Inventors: Kazushi Nomura, Ryoji Fujiwara, Michiyo Nishimura, Yoji Teramoto, Shunsuke Murakami
  • Publication number: 20090026914
    Abstract: To provide an electron-emitting device having an electron-emitting film containing a metal and a carbon, wherein a density of the electron-emitting film other than the metal is determined to be not less than 1.2 g/cm3 and not more than 1.8 g/cm3, and a hydrogen content in the electron-emitting film is determined to be not less than 15 atm % and not more than 40 atm % with respect to the all atoms composing the electron-emitting film. Further, a concentration of the metal in the range of a depth from a surface of this electron-emitting film up to 10 nm is determined to be not less than 0.1 atm % and not more than 40 atm % with respect to number of carbon atoms contained in the electron-emitting film.
    Type: Application
    Filed: July 16, 2008
    Publication date: January 29, 2009
    Applicant: CANON KABUSHIKI KAISHA
    Inventors: Kazushi Nomura, Ryoji Fujiwara, Michiyo Nishimura, Yoji Teramoto, Shunsuke Murakami
  • Patent number: 7435689
    Abstract: A process for fabricating an electron emitting device comprises a cathode electrode and a gate electrode are laminated through an insulating layer and an electron emitting film on the cathode electrode located in a gate hole penetrating through the gate electrode and the insulating layer. Wherein, a second hole penetrating through at least the gate electrode between the insulating layer and the gate electrode is juxtaposed with a first hole as a gate hole is formed, and the insulating layer between the second hole and the first hole in which the electron emitting film is deposited to the inner wall surface is etched until the first hole and the second hole are communicated with each other. Thereby, electron emitting film material is removed form the hole to reduce a leakage current.
    Type: Grant
    Filed: August 25, 2006
    Date of Patent: October 14, 2008
    Assignee: Canon Kabushiki Kaisha
    Inventor: Yoji Teramoto
  • Publication number: 20080012463
    Abstract: An electron emission device is provided which has sufficient on/off characteristics and is capable of efficiently emitting electrons with a low voltage. An electron emission device includes a substrate, a cathode electrode, a gate electrode, which are arranged on the substrate, an insulation layer covering the surface of the cathode electrode, and a dipole layer formed by terminating the surface of the insulation layer with hydrogen.
    Type: Application
    Filed: July 18, 2007
    Publication date: January 17, 2008
    Applicant: CANON KABUSHIKI KAISHA
    Inventors: Ryoji Fujiwara, Yoji Teramoto
  • Patent number: 7259520
    Abstract: An electron emission device is provided which has sufficient on/off characteristics and is capable of efficiently emitting electrons with a low voltage. An electron emission device includes a substrate, a cathode electrode, a gate electrode, which are arranged on the substrate, an insulation layer covering the surface of the cathode electrode, and a dipole layer formed by terminating the surface of the insulation layer with hydrogen.
    Type: Grant
    Filed: November 1, 2005
    Date of Patent: August 21, 2007
    Assignee: Canon Kabushiki Kaisha
    Inventors: Ryoji Fujiwara, Yoji Teramoto
  • Publication number: 20070054585
    Abstract: A process for fabricating an electron emitting device comprises a cathode electrode and a gate electrode are laminated through an insulating layer and an electron emitting film on the cathode electrode located in a gate hole penetrating through the gate electrode and the insulating layer. Wherein, a second hole penetrating through at least the gate electrode between the insulating layer and the gate electrode is juxtaposed with a first hole as a gate hole is formed, and the insulating layer between the second hole and the first hole in which the electron emitting film is deposited to the inner wall surface is etched until the first hole and the second hole are communicated with each other. Thereby, electron emitting film material is removed form the hole to reduce a leakage current.
    Type: Application
    Filed: August 25, 2006
    Publication date: March 8, 2007
    Applicant: CANON KABUSHIKI KAISHA
    Inventor: YOJI TERAMOTO
  • Patent number: 7109663
    Abstract: An electron emission device is provided which has sufficient on/off characteristics and is capable of efficiently emitting electrons with a low voltage. An electron emission device includes a substrate, a cathode electrode, a gate electrode, which are arranged on the substrate, an insulation layer covering the surface of the cathode electrode, and a dipole layer formed by terminating the surface of the insulation layer with hydrogen.
    Type: Grant
    Filed: May 26, 2004
    Date of Patent: September 19, 2006
    Assignee: Canon Kabushiki Kaisha
    Inventors: Ryoji Fujiwara, Yoji Teramoto
  • Patent number: 7074102
    Abstract: A method of manufacturing an electron-emitting device, which has an easy manufacturing process and preferably controls an electron beam diameter. The method includes: arranging on a substrate a member comprising a first electroconductive layer blanketing the substrate, a layer containing at least one of materials forming an electron-emitting element blanketing the first electroconductive layer, a protective layer blanketing the layer containing at least one of materials, a second electroconductive layer blanketing the protective layer, an insulating layer blanketing the second electroconductive layer, and a third electroconductive layer blanketing the insulating layer; forming an opening, which extends from a surface of the third electroconductive layer to the protective layer, by dry etching; and wet-etching the protective layer through the opening to expose a portion of the layer containing at least one of the materials forming the electron-emitting element.
    Type: Grant
    Filed: January 16, 2004
    Date of Patent: July 11, 2006
    Assignee: Canon Kabushiki Kaisha
    Inventor: Yoji Teramoto
  • Publication number: 20060125370
    Abstract: The invention is to provide a producing method for an electron emitting device of field emission type, having sufficient on/off characteristics and capable of efficient electron emission at a low voltage. There is provided a producing method for an electron emitting device including steps of preparing a plurality of electroconductive particles each covered with an insulation material having a thickness of 10 nm or less at least on a part of a surface of the particle, and forming a dipole layer on a surface of the insulation material covering each of the plurality of electroconductive particles.
    Type: Application
    Filed: December 8, 2005
    Publication date: June 15, 2006
    Applicant: CANON KABUSHIKI KAISHA
    Inventors: Michiyo Nishimura, Yoji Teramoto, Ryoji Fujiwara
  • Publication number: 20060061289
    Abstract: An electron emission device is provided which has sufficient on/off characteristics and is capable of efficiently emitting electrons with a low voltage. An electron emission device includes a substrate, a cathode electrode, a gate electrode, which are arranged on the substrate, an insulation layer covering the surface of the cathode electrode, and a dipole layer formed by terminating the surface of the insulation layer with hydrogen.
    Type: Application
    Filed: November 1, 2005
    Publication date: March 23, 2006
    Applicant: CANON KABUSHIKI KAISHA
    Inventors: Ryoji Fujiwara, Yoji Teramoto
  • Publication number: 20040251812
    Abstract: An electron emission device is provided which has sufficient on/off characteristics and is capable of efficiently emitting electrons with a low voltage. An electron emission device includes a substrate, a cathode electrode, a gate electrode, which are arranged on the substrate, an insulation layer covering the surface of the cathode electrode, and a dipole layer formed by terminating the surface of the insulation layer with hydrogen.
    Type: Application
    Filed: May 26, 2004
    Publication date: December 16, 2004
    Applicant: CANON KABUSHIKI KAISHA
    Inventors: Ryoji Fujiwara, Yoji Teramoto
  • Publication number: 20040253898
    Abstract: To provide a method of manufacturing an electron-emitting device, which has an easy manufacturing process and preferably controls an electron beam diameter.
    Type: Application
    Filed: January 16, 2004
    Publication date: December 16, 2004
    Applicant: CANON KABUSHIKI KAISHA
    Inventor: Yoji Teramoto