Patents by Inventor Yoke King Chin

Yoke King Chin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Low OHMIC contacts
    Patent number: 8922003
    Abstract: A method for forming a device is disclosed. A substrate with a contact region is provided. Vacancy defects are formed in the substrate. The vacancy defects have a peak concentration at a depth DV. A metal based contact is formed in the contact region. The metal based contact has a depth DC which is equal to about DV. The vacancy defects lower the resistance of the metal based contact with the substrate.
    Type: Grant
    Filed: January 19, 2012
    Date of Patent: December 30, 2014
    Assignees: GLOBALFOUNDRIES Singapore Pte. Ltd., Nanyang Technological University
    Inventors: Dexter Xueming Tan, Yoke King Chin, Kin Leong Pey
  • LOW OHMIC CONTACTS
    Publication number: 20130187264
    Abstract: A method for forming a device is disclosed. A substrate with a contact region is provided. Vacancy defects are formed in the substrate. The vacancy defects have a peak concentration at a depth DV. A metal based contact is formed in the contact region. The metal based contact has a depth DC which is equal to about DV. The vacancy defects lower the resistance of the metal based contact with the substrate.
    Type: Application
    Filed: January 19, 2012
    Publication date: July 25, 2013
    Applicants: NANYANG TECHNOLOGICAL UNIVERSITY, GLOBALFOUNDRIES SINGAPORE PTE. LTD.
    Inventors: Dexter Xueming TAN, Yoke King CHIN, Kin Leong PEY
  • Method for fabricating nano devices
    Patent number: 8338280
    Abstract: Embodiments relate to a method for fabricating nano-wires in nano-devices, and more particularly to nano-device fabrication using end-of-range (EOR) defects. In one embodiment, a substrate with a surface crystalline layer over the substrate is provided and EOR defects are created in the surface crystalline layer. One or more fins with EOR defects embedded within is formed and oxidized to form one or more fully oxidized nano-wires with nano-crystals within the core of the nano-wire.
    Type: Grant
    Filed: July 8, 2010
    Date of Patent: December 25, 2012
    Assignees: GLOBALFOUNDRIES Singapore Pte. Ltd., Nanyang Technological University
    Inventors: Dexter Tan, Kin Leong Pey, Sai Hooi Yeong, Yoke King Chin, Kuang Kian Ong, Chee Mang Ng
  • METHOD FOR FABRICATING NANO DEVICES
    Publication number: 20120009749
    Abstract: Embodiments relate to a method for fabricating nano-wires in nano-devices, and more particularly to nano-device fabrication using end-of-range (EOR) defects. In one embodiment, a substrate with a surface crystalline layer over the substrate is provided and EOR defects are created in the surface crystalline layer. One or more fins with EOR defects embedded within is formed and oxidized to form one or more fully oxidized nano-wires with nano-crystals within the core of the nano-wire.
    Type: Application
    Filed: July 8, 2010
    Publication date: January 12, 2012
    Applicants: NANYANG TECHNOLOGICAL UNIVERSITY, GLOBALFOUNDRIES SINGAPORE PTE. LTD.
    Inventors: Dexter TAN, Kin Leong PEY, Sai Hooi YEONG, Yoke King CHIN, Kuang Kian ONG, Chee Mang NG