Patents by Inventor Yokichi Hayashi

Yokichi Hayashi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 5764093
    Abstract: A fine variable delay circuit includes a buffer having an input connected to a signal input terminal and an output. The buffer has an output impedance and outputs a logical level from the output. The fine variable delay circuit also includes a schmidt trigger buffer having an input connected to the output of the buffer and an output connected to a signal output terminal, a CMOS transistor having a gate and two electrodes, the gate being connected to a connection point between said buffer and said schmidt trigger buffer.
    Type: Grant
    Filed: May 2, 1997
    Date of Patent: June 9, 1998
    Assignee: Advantest Corporation
    Inventors: Yokichi Hayashi, Hiroshi Tsukahara, Katsumi Ochiai, Masuhiro Yamada, Naoyoshi Watanabe
  • Patent number: 5495197
    Abstract: First and second exclusive-OR gates (hereinafter referred to as EXOR gates) are provided, which are both connected at one input side to a delay input terminal. The other input side of the first EXOR gate is grounded and the other input side of the second EXOR gate is connected to a select signal input terminal. A capacitor is connected between the output side of the first EXOR gate and the output side of the second EXOR gate. The output side of the first EXOR gate is connected to a delay output terminal by way of a buffer which outputs logical levels. The buffer has a threshold value and outputs one or the other binary logical level depending on whether the input thereto is above or below a threshold value.
    Type: Grant
    Filed: February 24, 1995
    Date of Patent: February 27, 1996
    Assignee: Advantest Corporation
    Inventors: Yokichi Hayashi, Hiroshi Tsukahara, Katsumi Ochiai, Masuhiro Yamada, Naoyoshi Watanabe
  • Patent number: 5440260
    Abstract: The gate of a CMOS transistor formed by a series connection of p-channel and n-channel FETs 21 and 22 is connected to an input terminal 23, and the drain of the CMOS transistor is connected to an output terminal 24. The source of the FET 21 is connected to a positive power supply terminal 20 via parallel-connected switchable resistance elements 37.sub.0, 37.sub.1, 37.sub.2, . . formed by p-channel FETs and having resistance values R.sub.0, R.sub.1, R.sub.2, . . . , respectively. The source of the other FET 22 is connected to a negative power supply terminal 30 via parallel-connected switchable resistance elements 38.sub.0, 38.sub.1, 38.sub.2, . . . formed by n-channel FETs and having resistance values R.sub.0, R.sub.1, R.sub.2, . . . , respectively. Delay setting signals S.sub.0, S.sub.1, . . . are decoded by a decoder 39 and one of more of its output terminals Y.sub.0, Y.sub.1 , . . . go to the high level. The output terminals Y.sub.0, Y.sub.1, Y.sub.2, . . .
    Type: Grant
    Filed: June 2, 1994
    Date of Patent: August 8, 1995
    Assignee: Advantest Corporation
    Inventors: Yokichi Hayashi, Hiroshi Tsukahara, Katsumi Ochiai, Mashuhiro Yamada, Naoyoshi Watanabe