Abstract: Provided is a silicon target material in which particles are not easily generated during a sputtering process and to form a low-defect (high quality) silicon-containing film. A silicon target material having a specific resistance of 20 ?·cm or more at room temperature is used for forming a silicon-containing film. The silicon target material may be polycrystalline or noncrystalline. However, when the silicon target material is single-crystalline, a more stable discharge state can be obtained. Also, a single-crystal silicon in which crystals are grown by an FZ method is a preferable material as a highly-pure silicon target material because its content of oxygen is low. Further, a target material having n-type conductivity and containing donor impurities is preferable to obtain stable discharge characteristics. Only a single or a plurality of silicon target materials according to the present invention may be used for sputtering film formation of the silicon-containing film.

Abstract: A silicon target for sputtering film formation which enables formation of a high-quality silicon-containing thin film by inhibiting dust generation during sputtering film formation is provided. An n-type silicon target material 10 and a metallic backing plate 20 are attached to each other via a bonding layer 40. A conductive layer 30 made of a material having a smaller work function than that of the silicon target material 10 is provided on a surface of the silicon target material 10 on the bonding layer 40 side. That is, the silicon target material 10 is attached to the metallic backing plate 20 via the conductive layer 30 and the bonding layer 40. In a case of single-crystal silicon, a work function of n-type silicon is generally 4.05 eV. A work function of a material of the conductive layer 30 needs to be smaller than 4.05 eV.

Abstract: Provided is a silicon target material in which particles are not easily generated during a sputtering process and to form a low-defect (high quality) silicon-containing film. A silicon target material having a specific resistance of 20 ?·cm or more at room temperature is used for forming a silicon-containing film. The silicon target material may be polycrystalline or noncrystalline. However, when the silicon target material is single-crystalline, a more stable discharge state can be obtained. Also, a single-crystal silicon in which crystals are grown by an FZ method is a preferable material as a highly-pure silicon target material because its content of oxygen is low. Further, a target material having n-type conductivity and containing donor impurities is preferable to obtain stable discharge characteristics. Only a single or a plurality of silicon target materials according to the present invention may be used for sputtering film formation of the silicon-containing film.