Abstract: A method of manufacturing a semiconductor device for patterning a semiconductor substrate by photolithography, the semiconductor substrate having a transparent or semitransparent layer having a high transmissivity at an exposure wavelength .lambda., and the transparent or semitransparent layer being formed on an underlying structure with a surface having a high reflectivity at the exposure wavelength .lambda.. The method comprises the steps of: forming a resist layer having a refractive index n.sub.r and a thickness d.sub.r on the transparent or semitransparent layer; forming a top antireflection film having a refractive index n.sub.a and a thickness d.sub.a on the resist layer; selectively exposing the resist layer via the top antireflection film with light having the exposure wavelength .lambda.; removing the top antireflection film; and developing a latent image in the resist layer to form a resist pattern, wherein an optical thickness n.sub.a d.sub.