Abstract: A nitride semiconductor light emitting device includes a laminate body, a first electrode, a second electrode, and a phosphor layer having a light emitting surface. The laminate body includes a first layer of a first-conductivity-type, a first part of a second layer of a second-conductivity-type, and a light emitting layer containing a nitride semiconductor between the first layer and the second layer. The first electrode is formed on a surface of the first layer. The second electrode is formed on a surface of a second part of the second layer that is formed between the laminate body and the phosphor layer. At least one of the laminate body, the second part of the second layer, and the phosphor layer has a lateral width that increase toward the light emitting surface.

Abstract: In one embodiment, a semiconductor light emitting device includes a stacked structure, a first electrode and a second electrode. A first semiconductor layer is broken into several pieces. Light is taken out from a light emitting layer side to a third semiconductor layer side. The first electrode includes a first region connected to the first semiconductor layer and a second region directly connected to the second semiconductor layer. The second electrode is connected to the third semiconductor layer, is provided above the second region from an upper direction of view, and has a thin wire shape or a dot shape.

Abstract: A semiconductor light emitting device includes a first conductivity-type first semiconductor layer, a second conductivity-type second semiconductor layer, a semiconductor light emitting layer, and first and second electrodes. The semiconductor light emitting layer is provided between the first semiconductor layer and the second semiconductor layer, and includes a multiple quantum well structure. The quantum well structure includes well layers and barrier layers each laminated alternately, each of the well layers being not less than 6 nm and not more than 10 nm. The first and second electrodes are electrically connected to the first and second semiconductor layers such that current flows in a direction substantially vertical to the main surface.

Abstract: A semiconductor light emitting device includes a first conductivity-type first semiconductor layer, a second conductivity-type second semiconductor layer, a semiconductor light emitting layer, and first and second electrodes. The semiconductor light emitting layer is provided between the first semiconductor layer and the second semiconductor layer, and includes a multiple quantum well structure. The quantum well structure includes well layers and barrier layers each laminated alternately, each of the well layers being not less than 6 nm and not more than 10 nm. The first and second electrodes are electrically connected to the first and second semiconductor layers such that current flows in a direction substantially vertical to the main surface.

Abstract: In one embodiment, a semiconductor light emitting device includes a stacked structure, a first electrode and a second electrode. A first semiconductor layer is broken into several pieces. Light is taken out from a light emitting layer side to a third semiconductor layer side. The first electrode includes a first region connected to the first semiconductor layer and a second region directly connected to the second semiconductor layer. The second electrode is connected to the third semiconductor layer, is provided above the second region from an upper direction of view, and has a thin wire shape or a dot shape.

Abstract: According to one embodiment, in a semiconductor light emitting device, a light emitting layer is partially provided on a first semiconductor layer of a first conductivity type, and has a multiple quantum well structure made by alternately laminating well layers having a first impurity concentration of the first conductivity type and barrier layers having a second impurity concentration of the first conductivity type higher than the first impurity concentration. A second semiconductor layer of a second conductivity type is provided on the light emitting layer, and has a single composition and uniform bandgap. A first distance between a first electrode provided on the first semiconductor layer and a second electrode provided on the second semiconductor layer in a direction parallel to the light emitting layer is larger than a second distance between the first electrode and the second electrode in a direction perpendicular to the light emitting layer.

Abstract: According to one embodiment, in a semiconductor light emitting device, a semiconductor laminated body is made by laminating a first semiconductor layer of a first conductivity type having a first sheet resistance, a light emitting layer, and a second semiconductor layer of a second conductivity type and includes a cutout unit formed at an end side and an indentation unit extending from the cutout unit in a first direction toward the other end side and branching or bending in a second direction substantially perpendicular to the first direction as well as bending or branching in a direction opposite to the second direction. A transparent conductive film is formed on the semiconductor laminated body and has a second sheet resistance less than the first sheet resistance. A first thin wire electrode is formed along the indentation unit. A second thin wire electrode is formed on the transparent conductive film.

Abstract: A light emitting device includes: a laminated body including a first conductivity type layer, a light emitting layer provided on the first conductivity type layer, and a second conductivity type layer provided on the light emitting layer, the laminated body being made of InxGayAl1-x-yN (0?x?1, 0?y?1, x+y?1); a first electrode provided on the first conductivity type layer exposed to a bottom surface of a step difference provided in the laminated body; a translucent electrode provided on one portion of an upper face of the second conductivity type layer; and a second electrode provided on the translucent electrode and being smaller than the translucent electrode. A length of the other portion of the upper face of the second conductivity layer between an end portion of the translucent electrode and the side face of the step difference is 30 ?m or more along a line connecting between a center of the first electrode and a center of the second electrode.