Abstract: A substrate surface inspection apparatus and method enabling judgment and analysis of the state of even portions of a substrate supported by supports using a captured image are provided. A support mechanism 20 is used where positions of arrangement of substrate support positions along the direction perpendicular to a scan direction by a plurality of first supports 23a to 23d are set outside the image capturing ranges of the substrate 10 by the imaging units 30a, 30b at the first relative position and inside the common image capturing range and where positions of arrangement of substrate support positions along the direction perpendicular to the scan direction by the plurality of second supports 24a to 24d are set outside the image capturing ranges of the substrate by the imaging units at the second relative position and inside the common image capturing range.

Abstract: A method of inspection and inspection apparatus able to use a captured image to more precisely inspect the state of film, defect parts, etc. at a surface of an object under inspection are provided. A method of inspection and inspection apparatus illuminating a surface of an object under inspection 10 by white light from an illumination unit LO while scanning the surface of the object under inspection 10 by an image capturing unit 100 to acquire a captured image and using the captured image to inspect a state of the surface of the object under inspection 10, which changes a state of polarization of light LR striking the image capturing unit 100 from an illuminated location of the object under inspection 10 and obtains a plurality of captured images based on light of different polarization states LR striking the image capturing unit 100.

Abstract: An inspection apparatus of a disk-shaped substrate able to precisely quantitatively inspect positions of formation of film layers formed on the surface of a disk-shaped substrate is provided, that is, an inspection apparatus of a disk-shaped substrate on which film layers are formed designed to generate captured image data expressing a captured image corresponding to a field of view based on image signals successively output from an image capturing unit capturing an image of a predetermined surface at an outer circumference part of the disk-shaped substrate and to generate film layer edge position information Y4E24 (?) expressing longitudinal direction positions at corresponding positions (?) along the circumferential direction of an edge line E24 of a film layer image part ISa (24) corresponding to the film layer 24 on the surface image ISa with reference to, from the captured image data, longitudinal direction positions YE15aL (?) at the different positions (?) along the circumferential direction of a bound

Abstract: A plasma processing device is able to positively enhance a process-gas exhaust efficiency in a processing region and restrict plasma leaking. A processing container of a magnetron type parallel plate plasma processing device has a separator for separating the inside of the processing container into a processing region and an exhaust region. The separator has a plurality of gas passage holes to establish communication between the processing region and the exhaust region, and consists of a non-conductive member. A conductive member is disposed on a gas passage-side surface facing the gas passage holes. A voltage V is applied by a power supply to the conductive member so that the gas passage-side surface is at a potential higher than that of a processing-region surface.

Abstract: A plasma processing device able to positively enhance a process-gas exhaust efficiency in a processing region and restrict plasma leaking. A processing container of a magnetron type parallel plate plasma processing device has a separator for separating the inside of the processing container into a processing region and an exhaust region. The separator has a plurality of gas passage holes to establish communication between the processing region and the exhaust region, and includes a non-conductive member. A conductive member is disposed on a gas passage-side surface facing the gas passage holes. A voltage V is applied by a power supply to the conductive member so that the gas passage-side surface is at a potential higher than that of a processing-region surface.