Abstract: The purpose of the present invention is to provide a composite electrolyte membrane which has excellent chemical resistance and can maintain sufficient mechanical strength even under conditions of high humidity and high pressure, which are the operating conditions for electrochemical hydrogen pumps and water electrolyzers. This composite electrolyte membrane, which is for achieving said purpose, has a composite layer obtained by combining a polyelectrolyte with a mesh woven material that satisfies (1) and (2) and comprises liquid crystal polyester fibers or polyphenylene sulfide fibers. (1): Mesh thickness (?m)/fiber diameter (?m)<2.0. (2): Opening (?m)/fiber diameter (?m)>1.0.

Abstract: The purpose of the present invention is to provide a composite electrolyte membrane which has excellent chemical resistance and can maintain sufficient mechanical strength even under conditions of high humidity and high pressure, which are the operating conditions for electrochemical hydrogen pumps and water electrolyzers. This composite electrolyte membrane, which is for achieving said purpose, has a composite layer obtained by combining a polyelectrolyte with a mesh woven material that satisfies (1) and (2) and comprises liquid crystal polyester fibers or polyphenylene sulfide fibers. (1): Mesh thickness (?m)/fiber diameter (?m)<2.0. (2): Opening (?m)/fiber diameter (?m)>1.0.

Abstract: According to embodiments, a semiconductor device includes an insulating substrate, a first electrode plate disposed on the insulating substrate, a second electrode plate disposed on the insulating substrate, a third electrode plate disposed on the insulating substrate, a first semiconductor element disposed on the first electrode plate, a first electrode of the first semiconductor element being electrically connected to the first electrode plate, a second semiconductor element disposed on the second electrode plate, a first electrode of the second semiconductor element being electrically connected to the second electrode plate, a first bonding wire electrically connecting a second electrode of the first semiconductor element to the third electrode plate, and a second bonding wire electrically connecting a second electrode of the second semiconductor element to the third electrode plate.

Abstract: According to embodiments, a semiconductor device includes an insulating substrate, a first electrode plate disposed on the insulating substrate, a second electrode plate disposed on the insulating substrate, a third electrode plate disposed on the insulating substrate, a first semiconductor element disposed on the first electrode plate, a first electrode of the first semiconductor element being electrically connected to the first electrode plate, a second semiconductor element disposed on the second electrode plate, a first electrode of the second semiconductor element being electrically connected to the second electrode plate, a first bonding wire electrically connecting a second electrode of the first semiconductor element to the third electrode plate, and a second bonding wire electrically connecting a second electrode of the second semiconductor element to the third electrode plate.

Abstract: The semiconductor device includes a plurality of first flat plates containing a material that absorbs an electromagnetic wave at a high frequency. Any of the first flat plates is disposed above the first connecting wire, and any other of the first flat plates is disposed above the second connecting wire.

Abstract: The semiconductor device includes a plurality of first flat plates containing a material that absorbs an electromagnetic wave at a high frequency. Any of the first flat plates is disposed above the first connecting wire, and any other of the first flat plates is disposed above the second connecting wire.

Abstract: A power semiconductor device includes: a semiconductor layer having a trench extending along a first direction in a stripe configuration; a gate electrode buried in the trench for controlling a current flowing in the semiconductor layer; and a gate plug made of a material having higher electrical conductivity than the gate electrode, the gate plug having the stripe configuration and being connected to the gate electrode along the first direction. The semiconductor layer includes: a first semiconductor layer of a first conductivity type; a second semiconductor layer of a second conductivity type provided partially in an upper face of the first semiconductor layer; a third semiconductor layer of the first conductivity type provided partially on the second semiconductor layer; and a fourth semiconductor layer of the second conductivity type provided on a lower face of the first semiconductor layer.

Abstract: A power semiconductor device includes: a semiconductor layer having a trench extending along a first direction in a stripe configuration; a gate electrode buried in the trench for controlling a current flowing in the semiconductor layer; and a gate plug made of a material having higher electrical conductivity than the gate electrode, the gate plug having the stripe configuration and being connected to the gate electrode along the first direction. The semiconductor layer includes: a first semiconductor layer of a first conductivity type; a second semiconductor layer of a second conductivity type provided partially in an upper face of the first semiconductor layer; a third semiconductor layer of the first conductivity type provided partially on the second semiconductor layer; and a fourth semiconductor layer of the second conductivity type provided on a lower face of the first semiconductor layer.