Abstract: The multilayer wiring film which is provided with a wiring layer that is formed of Cu or a Cu alloy and has an electrical resistance of 10 ??cm or less and a Cu—X alloy layer that contains Cu and an element X and is arranged above and/or below the wiring layer, and wherein the element X is composed of at least one element selected from the group X consisting of Al, Mn, Zn and Ni, and the metals constituting the Cu—X alloy layer have a specific composition. The multilayer wiring film is able to provide a multilayer wiring film which has low electrical resistance and is free from film separation during the formation of a SiOx film by a CVD method, said SiOx film serving as an interlayer insulating film, and which is also free from an increase in the electrical resistance even if subjected to a high-temperature heat treatment that is carried out at 400° C. or higher.

Abstract: An organic electronic device provided with an organic electronic element on one surface of a substrate, wherein the substrate has a metal layer and an insulating layer overlaid on at least one face side of the metal layer, and the one face of the substrate does not have an irregularity peak having a K value of equal to or lower than ?0.07 as calculated by expression (1). In the expression (1), x represents an irregularity peak position when a line roughness analysis is conducted on a 10 ?m square on the one face of the substrate with an interval of 2.45 nm, f(x) represents a surface irregularity height (nm) at x, and dx represents an infinitesimal change in x. K=[f(x+dx)?2f(x)+f(x?dx)]/dx2 . . .

Abstract: An Ag alloy film used for a reflecting electrode or an interconnection electrode, the Ag alloy film exhibiting low electrical resistivity and high reflectivity and having exceptional oxidation resistance under cleaning treatments such as an O2 plasma treatment or UV irradiation, wherein the Ag alloy film contains either In in an amount of larger than 2.0 atomic % to 2.7 atomic % or smaller; or Zn in an amount of larger than 2.0 atomic % to 3.5 atomic % or smaller; or both. The Ag alloy film may further contain Bi in an amount of 0.01 to 1.0 atomic %.

Abstract: Provided are: a novel electrode which is suitable for use in an input device as typified by a capacitive touch panel sensor, and which has low electrical resistivity and low reflectance; and a method for producing this electrode. This electrode has a multilayer structure comprising a first layer that is formed of an Al film or an Al alloy film and a second layer that is partially nitrided and is formed of an Al alloy containing Al and at least one element selected from the group consisting of Mn, Cu, Ti and Ta.

Abstract: An Ag alloy film used for a reflecting electrode or an interconnection electrode, the Ag alloy film exhibiting low electrical resistivity and high reflectivity and having exceptional oxidation resistance under cleaning treatments such as an O2 plasma treatment or UV irradiation, wherein the Ag alloy film contains either In in an amount of larger than 2.0 atomic % to 2.7 atomic % or smaller; or Zn in an amount of larger than 2.0 atomic % to 3.5 atomic % or smaller; or both. The Ag alloy film may further contain Bi in an amount of 0.01 to 1.0 atomic %.

Abstract: Provided are: a novel electrode which is suitable for use in an input device as typified by a capacitive touch panel sensor, and which has low electrical resistivity and low reflectance; and a method for producing this electrode. This electrode has a multilayer structure comprising a first layer that is formed of an Al film or an Al alloy film and a second layer that is partially nitrided and is formed of an Al alloy containing Al and at least one element selected from the group consisting of Mn, Cu, Ti and Ta.

Abstract: An electrode for use in an input device is formed on a transparent substrate. The electrode has a laminated structure including a first layer, a second layer and a third layer on one surface of the transparent substrate, in this order from the farthest side from the surface. The first layer includes a transparent conductive film. The second layer includes one or more members of a nitride of Mo and a nitride of an Mo alloy. The third layer includes a metal film having a reflectance of 40% or higher and a transmittance of 10% or less.

Abstract: This interconnection film for touch panel sensors is configured of a laminate structure that is composed of a first layer which is formed on a transparent conductive film and is comprising pure Cu or a Cu alloy that is mainly composed of Cu, and a second layer which is formed on the first layer and is formed of pure Al or an Al alloy that contains at least one element selected from a group consisting of Ta, Nd and Ti in an amount of 10 atomic % or smaller.

Abstract: An Ag alloy film used for a reflecting electrode or an interconnection electrode, the Ag alloy film exhibiting low electrical resistivity and high reflectivity and having exceptional oxidation resistance under cleaning treatments such as an O2 plasma treatment or UV irradiation, wherein the Ag alloy film contains either In in an amount of larger than 2.0 atomic % to 2.7 atomic % or smaller; or Zn in an amount of larger than 2.0 atomic % to 3.5 atomic % or smaller; or both. The Ag alloy film may further contain Bi in an amount of 0.01 to 1.0 atomic %.

Abstract: Provided is a recording film for an optical information recording medium with which it is possible to meet all predetermined characteristics requirements and increase productivity while reducing the number of layers in the optical information recording medium. The present invention relates to a recording film for an optical information recording medium on which recording is performed by laser light irradiation, wherein the recording film for an optical information recording medium includes: Mn; at least one element (group X element) selected from the group consisting of Bi, Ag, Co, Cu, In, Sn, and Zn (group X); and oxygen (O). At least some of the Mn and at least some of the group X element are oxidized.

Abstract: The present invention provides an Ag alloy film which exhibits a low-level electrical resistivity nearly equivalent to that of a pure Ag film and which is superior to a conventional Ag alloy film in durability (specifically, resistances to salt water and halogen) and in the adhesion to a substrate. Further, the deposition rate of this Ag alloy film by sputtering is as high as that of a pure Ag film. Provided is an Ag alloy film useful as a reflecting film and/or a transmitting film or as an electrical wiring and/or an electrode, including 0.1 to 1.5 atomic % of at least one element selected from Pd, Au and Pt, and 0.02 to 1.5 atomic % of at least one element selected from at least one rare earth element, Bi and Zn with the balance being Ag and inevitable impurities.

Abstract: An Ag alloy film for use in reflective electrodes is provided, which has a low electrical resistivity and a high reflectance that are almost at the same levels as those of an Ag film, and has excellent oxidation resistance. An Ag alloy film for reflective electrodes, which can be used in a reflective electrode and is characterized in that at least one element selected from the group consisting of In and Zn is contained in an amount of 0.1 to 2.0 atomic %.

Abstract: Provided is a recording film for an optical information recording medium with which it is possible to meet all predetermined characteristics requirements and increase productivity while reducing the number of layers in the optical information recording medium. The present invention relates to a recording film for an optical information recording medium on which recording is performed by laser light irradiation, wherein the recording film for an optical information recording medium includes: Mn; at least one element (group X element) selected from the group consisting of Bi, Ag, Co, Cu, In, Sn, and Zn (group X); and oxygen (O). At least some of the Mn and at least some of the group X element are oxidized.

Abstract: A recording layer for optical information recording medium excellent in recording property, an optical information recording medium including the recording layer and a sputtering target useful for formation of the recording layer are provided. A recording layer for an optical information recording medium on which recording is performed through irradiation with laser light, the recording layer including an oxide of a metal of which an absolute value of the standard free energy of oxide formation per 1 mol of oxygen is larger than that of Pd (hereinafter referred to metal X) and a Pd oxide, wherein the Pd oxide includes a Pd monoxide and a Pd dioxide, and wherein a ratio of the Pd atom to a total of the metal X atom and the Pd atom which are contained in the recording layer is 4 to 85 atomic %.

Abstract: A recording layer excellent in recording property, an optical information recording medium including the recording layer, and a sputtering target for producing the recording layer. The recording layer on which recording is performed through irradiation with a laser light, contains: a Pd oxide; a Ag oxide; and an oxide of a metal X of having an absolute value of the standard free energy of oxide formation per 1 mol of oxygen that is larger than an oxide of Pd and Ag, wherein a ratio of Pd atom to a total (metal X atom+Pd atom+Ag atom) is from 10 to 60 atomic %, a ratio of Ag atom to the total is from 5 to 45 atomic %, and a ratio of Pd atom and the Ag atom to the total is 75 atomic % or less.

Abstract: Disclosed is a read-only optical information recording medium which comprises a reflective film having a reflectance suitable for use as a reflective film for an optical information recording medium (e.g., BD-ROM) and having excellent reproduction stability, and which utilizes a blue laser beam. Specifically disclosed is a read-only optical information recording medium comprising a reflective film, wherein the reflective film comprises an Al-based alloy containing at least one element selected from Si and Ge in an amount of 5 to 40 at. %.

Abstract: Provided is a read-only optical information recording medium (for instance, a dual-layer BD-ROM), which uses blue laser and is provided with a reflecting film which has sufficiently high reflectivity while ensuring optical transparency required in manufacture, has excellent reproduction stability when used for an optical information recording medium and has excellent durability. The read-only optical information recording medium includes a structure wherein a plurality of laminated layers of the reflecting film and the optical transparent layer are formed on a substrate, and reproduces information by means of blue laser. The reflecting film closest to the substrate among the reflecting films is substantially composed of an Al-based alloy containing 0.5-3.0 atm % of Ti, and has a film thickness of 10 nm or more but not more than 30 nm.

Abstract: A recording layer for an optical information recording medium, which has a high reflectance (initial reflectance) and excellent recording characteristics; an optical information recording medium comprising the recording layer; and a sputtering target useful for forming the recording layer. The recording layer for an optical information recording medium, on which recording is performed by irradiation of laser light, is characterized by containing indium (In) oxide and palladium (Pd) oxide which includes palladium monoxide and palladium dioxide. The recording layer for an optical information recording medium is also characterized in that the ratio of Pd atoms contained in the recording layer relative to the total of In atoms and Pd atoms contained therein is 6-60 atom %.

Abstract: A recording layer for optical information recording medium excellent in recording property, an optical information recording medium including the recording layer and a sputtering target useful for formation of the recording layer are provided. A recording layer for an optical information recording medium on which recording is performed through irradiation with laser light, the recording layer including an oxide of a metal of which an absolute value of the standard free energy of oxide formation per 1 mol of oxygen is larger than that of Pd (hereinafter referred to metal X) and a Pd oxide, wherein the Pd oxide includes a Pd monoxide and a Pd dioxide, and wherein a ratio of the Pd atom to a total of the metal X atom and the Pd atom which are contained in the recording layer is 4 to 85 atomic %.

Abstract: A recording layer excellent in recording property, an optical information recording medium including the recording layer, and a sputtering target for producing the recording layer. The recording layer on which recording is performed through irradiation with a laser light, contains: a Pd oxide; a Ag oxide; and an oxide of a metal X of having an absolute value of the standard free energy of oxide formation per 1 mol of oxygen that is larger than an oxide of Pd and Ag, wherein a ratio of Pd atom to a total (metal X atom+Pd atom+Ag atom) is from 10 to 60 atomic %, a ratio of Ag atom to the total is from 5 to 45 atomic %, and a ratio of Pd atom and the Ag atom to the total is 75 atomic % or less.