Abstract: According to one embodiment, a mold includes a base, a first concave pattern, a second concave pattern, and a third concave pattern. The base includes a first surface and a pedestal projecting from the first surface. The pedestal includes a first region and a second region disposed outside the first region. The first concave pattern is formed in the first region. The second concave pattern is formed in the second region. The third concave pattern extends from the first region to the second region.

Abstract: In general, according to one embodiment, a method is disclosed for a droplet positioning method. The method can include determining an amount of the droplet required in each of a first region, determining a total amount of the droplet, determining a total number of the droplets, determining a provisional positioning of the droplets based on a template contact form, redividing the face for forming the base body pattern again using the second regions, and determining an evaluation value for each second region. If the distribution of the evaluation values is out of the target range, a repositioning at least any of the droplets, redividing the face for forming the base body pattern again using the second regions, and determining an evaluation value for each second region are repeated until distribution of the evaluation values is in the target range.

Abstract: According to one embodiment, a mask pattern creation method includes extracting an area, in which a DSA material is directed self-assembled to form a DSA pattern, from a design pattern area based on a design pattern and information on the DSA material. The method also includes creating a guide pattern that causes the DSA pattern to be formed in the area based on the design pattern, the information on the DSA material, the area, and a design constraint when forming the guide pattern. The method further includes creating a mask pattern of the guide pattern using the guide pattern.

Abstract: According to one embodiment, a mold includes a base, a first concave pattern, a second concave pattern, and a third concave pattern. The base includes a first surface and a pedestal projecting from the first surface. The pedestal includes a first region and a second region disposed outside the first region. The first concave pattern is formed in the first region. The second concave pattern is formed in the second region. The third concave pattern extends from the first region to the second region.

Abstract: Described herein are methods and systems for efficiently preparing a wafer layout for processing into a photomask. Portions of layouts containing semiconductor features and designs that are frequently used can be stored in a database. These portions can be post-decomposition, with all treatment and error checking already performed upon them. When a wafer layout is received for processing into a photomask, the processing and decomposition time can be reduced by analyzing the layout, and replacing sections of the layout with the portions from the database that have already been decomposed and processed. As these sections no longer need to be decomposed, error checked, and treated, the processing time is greatly reduced, and photomasks can be made quicker and more efficiently.

Abstract: In general, according to one embodiment, a method is disclosed for a droplet positioning method. The method can include determining an amount of the droplet required in each of a first region, determining a total amount of the droplet, determining a total number of the droplets, determining a provisional positioning of the droplets based on a template contact form, redividing the face for forming the base body pattern again using the second regions, and determining an evaluation value for each second region. If the distribution of the evaluation values is out of the target range, a repositioning at least any of the droplets, redividing the face for forming the base body pattern again using the second regions, and determining an evaluation value for each second region are repeated until distribution of the evaluation values is in the target range.

Abstract: According to a method of forming a drawing pattern of an embodiment, by setting the positions of drawing shots for a drawing pattern, drawing data is generated based on pattern data. A plurality of types of drawing data are generated based on one type of pattern data by setting the positions of the drawing shots to positions different for each piece of the drawing data when the drawing data is generated. In addition, multiple exposures are performed for the substrate by using the plurality of types of the drawing data when the drawing pattern is formed on the substrate.

Abstract: Described herein are methods and systems for efficiently preparing a wafer layout for processing into a photomask. Portions of layouts containing semiconductor features and designs that are frequently used can be stored in a database. These portions can be post-decomposition, with all treatment and error checking already performed upon them. When a wafer layout is received for processing into a photomask, the processing and decomposition time can be reduced by analyzing the layout, and replacing sections of the layout with the portions from the database that have already been decomposed and processed. As these sections no longer need to be decomposed, error checked, and treated, the processing time is greatly reduced, and photomasks can be made quicker and more efficiently.

Abstract: According to one embodiment, a mask pattern creation method includes extracting an area, in which a DSA material is directed self-assembled to form a DSA pattern, from a design pattern area based on a design pattern and information on the DSA material. The method also includes creating a guide pattern that causes the DSA pattern to be formed in the area based on the design pattern, the information on the DSA material, the area, and a design constraint when forming the guide pattern. The method further includes creating a mask pattern of the guide pattern using the guide pattern.

Abstract: A phase shift mask having a plurality of mask patterns or mask data thereof is prepared, and an overlapped focus range in each of the mask patterns in a case where a result of exposure to each of the mask patterns, obtained by an exposure experiment or a lithography simulation, meets a desired dimension is obtained. A digging depth is determined at discretion based on the obtained overlapped focus range.