Abstract: Light is irradiated onto a glass substrate of an organic EL element, and the characteristics of an organic film are analyzed. In the sample analyzing apparatus, in such a way that the glass substrate is located on the upper side, the organic EL element is placed on a stage. The light is irradiated towards the glass substrate, and an amplitude ratio and a phase difference which are related to the organic EL element are measured. Also, the sample analyzing apparatus selects a model of a structure corresponding to reflected lights K1 to K3 of the irradiated light and calculates the amplitude ratio and the phase difference. The sample analyzing apparatus compares the measured result and the result calculated from the model, and properly executes the fitting, and determines the best model among the several models and then analyzes the characteristics related to the organic EL element.

Abstract: Light is irradiated onto a glass substrate of an organic EL element, and the characteristics of an organic film are analyzed. In the sample analyzing apparatus, in such a way that the glass substrate is located on the upper side, the organic EL element is placed on a stage. The light is irradiated towards the glass substrate, and an amplitude ratio and a phase difference which are related to the organic EL element are measured. Also, the sample analyzing apparatus selects a model of a structure corresponding to reflected lights K1 to K3 of the irradiated light and calculates the amplitude ratio and the phase difference. The sample analyzing apparatus compares the measured result and the result calculated from the model, and properly executes the fitting, and determines the best model among the several models and then analyzes the characteristics related to the organic EL element.

Abstract: Light is irradiated onto a glass substrate of an organic EL element, and the characteristics of an organic film are analyzed. In the sample analyzing apparatus, in such a way that the glass substrate is located on the upper side, the organic EL element is placed on a stage. The light is irradiated towards the glass substrate, and an amplitude ratio and a phase difference which are related to the organic EL element are measured. Also, the sample analyzing apparatus selects a model of a structure corresponding to reflected lights K1 to K3 of the irradiated light and calculates the amplitude ratio and the phase difference. The sample analyzing apparatus compares the measured result and the result calculated from the model, and properly executes the fitting, and determines the best model among the several models and then analyzes the characteristics related to the organic EL element.

Abstract: An ellipsometer measures any point of a sample by a first spectrometer and a second spectrometer. The ellipsometer performs analysis based on the measurement results obtained by the first spectrometer, performs analysis based on the measurement results obtained by the second spectrometer, and calculates an approximation formula for approximating the analysis results obtained by the second spectrometer to the analysis results obtained by the first spectrometer. The remaining points of the sample are measured with the second spectrometer, and the results of analysis using the measurement results are corrected based on the approximation formula.

Abstract: The present invention provides a thin film property measuring method using a spectroscopic ellipsometer. With the measuring method, a model including a combination of the film thickness, complex refractive index, or the like, of each layer is formed, and fitting is made for the measured spectra and the spectra calculated based upon the model, with the model and the incident angle being modified over a predetermined number of repetitions, thereby determining the structure, the wavelength dependency of the dielectric constant, and the composition ratio, of a thin film including a compound semiconductor layer on a substrate. Furthermore, new approximate calculation is employed in the present invention, thereby enabling the concentration of the atom of interest contained in polycrystalline compound semiconductor to be calculated.

Abstract: Light is irradiated onto a glass substrate of an organic EL element, and the characteristics of an organic film are analyzed. In the sample analyzing apparatus, in such a way that the glass substrate is located on the upper side, the organic EL element is placed on a stage. The light is irradiated towards the glass substrate, and an amplitude ratio and a phase difference which are related to the organic EL element are measured. Also, the sample analyzing apparatus selects a model of a structure corresponding to reflected lights K1 to K3 of the irradiated light and calculates the amplitude ratio and the phase difference. The sample analyzing apparatus compares the measured result and the result calculated from the model, and properly executes the fitting, and determines the best model among the several models and then analyzes the characteristics related to the organic EL element.

Abstract: With extremely-thin-film and thin-film measurement, models are formed based upon a combination of film thickness, optical constants obtained using the dispersion formula, incident angle, etc., and the model and measured spectrums are fit by BLMC for a single layer of a structure with a certain number of iterations, obtaining information regarding the single layer. With thin-film multi-layer-structure measurement, models are formed for multiple layers of a thin-film multi-layer structure likewise, and fit by BLMC or EBLMC, obtaining information regarding the thin-film multi-layer structure. In either measurement, light is cast onto a thin film on a substrate to be measured while changing the wavelength as a parameter in order to obtain the spectrums ?E(?i) and ?E(?i) for each wavelength ?i, representing the change in polarization between the incident and reflected light. The measured spectrums are fit, obtaining the best model. The results are confirmed and stored, as necessary.

Abstract: A sample, in which a dielectric film having a dielectric constant equal to or larger than 50 (based on electrical measurement) is formed on a substrate, is measured by an ellipsometer while a model corresponding to the sample is formed based on effective medium approximation (EMA). A film corresponding to the dielectric film of the model includes void volume fraction between 60% and 90%. A calculated value based on the model is compared with a value measured by the ellipsometer and fitting is applied to decrease a difference between the compared values in order to specify the thickness and the optical constant of the sample.

Abstract: A sample, in which a dielectric film having a dielectric constant equal to or larger than 50 (based on electrical measurement) is formed on a substrate, is measured by an ellipsometer while a model corresponding to the sample is formed based on effective medium approximation (EMA). A film corresponding to the dielectric film of the model includes void volume fraction between 60% and 90%. A calculated value based on the model is compared with a value measured by the ellipsometer and fitting is applied to decrease a difference between the compared values in order to specify the thickness and the optical constant of the sample.

Abstract: An ellipsometer measures any point of a sample by a first spectrometer and a second spectrometer. The ellipsometer performs analysis based on the measurement results obtained by the first spectrometer, performs analysis based on the measurement results obtained by the second spectrometer, and calculates an approximation formula for approximating the analysis results obtained by the second spectrometer to the analysis results obtained by the first spectrometer. The remaining points of the sample are measured with the second spectrometer, and the results of analysis using the measurement results are corrected based on the approximation formula.

Abstract: With extremely-thin-film and thin-film measurement, models are formed based upon a combination of film thickness, optical constants obtained using the dispersion formula, incident angle, etc., and the model and measured spectrums are fit by BLMC for a single layer of a structure with a certain number of iterations, obtaining information regarding the single layer. With thin-film multi-layer-structure measurement, models are formed for multiple layers of a thin-film multi-layer structure likewise, and fit by BLMC or EBLMC, obtaining information regarding the thin-film multi-layer structure. In either measurement, light is cast onto a thin film on a substrate to be measured while changing the wavelength as a parameter in order to obtain the spectrums &psgr;E(&lgr;i) and &Dgr;E(&lgr;i) for each wavelength &lgr;i, representing the change in polarization between the incident and reflected light. The measured spectrums are fit, obtaining the best model. The results are confirmed and stored, as necessary.

Abstract: The present invention provides a thin film property measuring method using a spectroscopic ellipsometer. With the measuring method, a model including a combination of the film thickness, complex refractive index, or the like, of each layer is formed, and fitting is made for the measured spectra and the spectra calculated based upon the model, with the model and the incident angle being modified over a predetermined number of repetitions, thereby determining the structure, the wavelength dependency of the dielectric constant, and the composition ratio, of a thin film including a compound semiconductor layer on a substrate. Furthermore, new approximate calculation is employed in the present invention, thereby enabling the concentration of the atom of interest contained in polycrystalline compound semiconductor to be calculated.