Patents by Inventor Yoko Y. Adams

Yoko Y. Adams has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8298958
    Abstract: A method for reducing very low frequency line width roughness (LWR) in forming etched features in an etch layer disposed below a patterned organic mask is provided. The patterned organic mask is treated to reduce very low frequency line width roughness of the patterned organic mask, comprising flowing a treatment gas comprising H2, wherein the treatment gas has a flow rate and H2 has a flow rate that is at least 50% of the flow rate of the treatment gas, forming a plasma from the treatment gas, and stopping the flow of the treatment gas. The etch layer is etched through the treated patterned organic mask with the reduced very low LWR.
    Type: Grant
    Filed: July 17, 2008
    Date of Patent: October 30, 2012
    Assignee: Lam Research Corporation
    Inventors: Yoko Y. Adams, David Yang
  • Publication number: 20100015809
    Abstract: A method for reducing very low frequency line width roughness (LWR) in forming etched features in an etch layer disposed below a patterned organic mask is provided. The patterned organic mask is treated to reduce very low frequency line width roughness of the patterned organic mask, comprising flowing a treatment gas comprising H2, wherein the treatment gas has a flow rate and H2 has a flow rate that is at least 50% of the flow rate of the treatment gas, forming a plasma from the treatment gas, and stopping the flow of the treatment gas. The etch layer is etched through the treated patterned organic mask with the reduced very low LWR.
    Type: Application
    Filed: July 17, 2008
    Publication date: January 21, 2010
    Applicant: LAM RESEARCH CORPORATION
    Inventors: Yoko Y. Adams, David Yang