Patents by Inventor Yoku Inoue
Yoku Inoue has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10464814Abstract: The invention shows a production apparatus for producing carbon nanotubes by the gas-phase catalysis process, comprising: a first chamber having a growth region that is a region in which carbon nanotubes are formed; a first temperature adjustment device capable of adjusting a temperature of the growth region in the first chamber; a pressure adjustment device capable of adjusting a pressure in the first chamber; a first feed device capable of feeding a carbon source to the growth region in the first chamber; a second temperature adjustment device capable of adjusting a temperature of a solid-phase iron family element-containing material disposed in the production apparatus; and a second feed device capable of feeding a gas-phase halogen-containing substance into the production apparatus so that the iron family element-containing material of which the temperature is adjusted to a predetermined temperature by the second temperature adjustment device can react with the halogen-containing substance.Type: GrantFiled: December 11, 2017Date of Patent: November 5, 2019Assignees: NATIONAL UNIVERSITY CORPORATION SHIZUOKA UNIVERSITY, JNC CORPORATIONInventors: Yoku Inoue, Takayuki Nakano, Tauto Nakanishi
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Patent number: 10343919Abstract: The invention shows a production method for carbon nanotubes. The production method comprises a first step of feeding at least one kind of gas-phase catalyst into a first chamber, the at least one kind of gas-phase catalyst being formed from an iron family element-containing substance and a halogen-containing substance that are contained in a first liquid; and a second step of forming the carbon nanotubes from a carbon source fed into the first chamber using a catalyst generated based on the gas-phase catalyst existing in the first chamber, wherein the first step includes vaporization of the first liquid, and the first liquid does not contain the carbon source.Type: GrantFiled: December 14, 2017Date of Patent: July 9, 2019Assignees: NATIONAL UNIVERSITY CORPORATION SHIZUOKA UNIVERSITY, JNC CORPORATIONInventors: Yoku Inoue, Takayuki Nakano, Tauto Nakanishi
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Publication number: 20180105423Abstract: The invention shows a production method for carbon nanotubes. The production method comprises a first step of feeding at least one kind of gas-phase catalyst into a first chamber, the at least one kind of gas-phase catalyst being formed from an iron family element-containing substance and a halogen-containing substance that are contained in a first liquid; and a second step of forming the carbon nanotubes from a carbon source fed into the first chamber using a catalyst generated based on the gas-phase catalyst existing in the first chamber, wherein the first step includes vaporization of the first liquid, and the first liquid does not contain the carbon source.Type: ApplicationFiled: December 14, 2017Publication date: April 19, 2018Applicants: NATIONAL UNIVERSITY CORPORATION SHIZUOKA UNIVERSITY, JNC CORPORATIONInventors: Yoku INOUE, Takayuki NAKANO, Tauto NAKANISHI
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Publication number: 20180105424Abstract: The invention shows a production apparatus for producing carbon nanotubes by the gas-phase catalysis process, comprising: a first chamber having a growth region that is a region in which carbon nanotubes are formed; a first temperature adjustment device capable of adjusting a temperature of the growth region in the first chamber; a pressure adjustment device capable of adjusting a pressure in the first chamber; a first feed device capable of feeding a carbon source to the growth region in the first chamber; a second temperature adjustment device capable of adjusting a temperature of a solid-phase iron family element-containing material disposed in the production apparatus; and a second feed device capable of feeding a gas-phase halogen-containing substance into the production apparatus so that the iron family element-containing material of which the temperature is adjusted to a predetermined temperature by the second temperature adjustment device can react with the halogen-containing substance.Type: ApplicationFiled: December 11, 2017Publication date: April 19, 2018Applicants: NATIONAL UNIVERSITY CORPORATION SHIZUOKA UNIVERSITY, JNC CORPORATIONInventors: Yoku INOUE, Takayuki NAKANO, Tauto NAKANISHI
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Publication number: 20170369318Abstract: Provided are a CNT forest having favorable spinning properties, and as a method for producing such a CNT forest, a production method in which CNT forest 45 is formed by applying, as deposition base surface 44, a surface including at least one part of inner surface 43 in opening substrate 40 having interior space 42 communicating with an outside through open portion 41, and CNT forest 45 has spinnable portion 47 at end 46 on a side of open portion 41.Type: ApplicationFiled: October 26, 2015Publication date: December 28, 2017Inventors: Yoku INOUE, Takayuki NAKANO, Tauto NAKANISHI
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Patent number: 9476782Abstract: A strain sensor provided with a substrate that has flexibility; a carbon nanotube (CNT) film that is provided on the surface of the substrate and that has a plurality of CNT fibers oriented in one direction; and a pair of electrodes that are arranged at both ends in the orientation direction of the CNT fibers in the CNT film; in which the CNT film has a plurality of CNT fiber bundles that consist of the plurality of CNT fibers, and a resin layer that covers the peripheral surface of the plurality of the CNT fiber bundles and joins with the surface of the substrate.Type: GrantFiled: May 9, 2014Date of Patent: October 25, 2016Assignees: Yamaha Corporation, National University Corporation Shizuoka UniversityInventors: Katsunori Suzuki, Shingo Sakakibara, Koji Yataka, Yasuro Okumiya, Masahiro Sugiura, Yoku Inoue
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Patent number: 9428391Abstract: Carbon nanotubes are grown by supplying raw material gas 30 comprising a carbon compound to be a raw material of the carbon nanotubes into the inside of a reaction vessel tube 14 in which a catalyst 26 to grow the carbon nanotubes is charged. At this time, halogen-containing material gas 32 to reduce the amount of a carbon product such as amorphous carbon produced besides carbon nanotubes that deposits on the surface of catalyst particles 44 due to supply of the raw material gas 30 is further supplied into the inside of the reaction vessel tube 14. Thereby, it is possible to produce elongated carbon nanotubes.Type: GrantFiled: May 10, 2012Date of Patent: August 30, 2016Assignee: NATIONAL UNIVERSITY CORPORATION SHIZUOKA UNIVERSITYInventors: Yoku Inoue, Adrian Ghemes, Haibo Zhao
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Publication number: 20160207773Abstract: The invention shows a production apparatus (10) for producing carbon nanotubes by the gas-phase catalysis process, comprising: a first chamber (14) having a growth region that is a region in which carbon nanotubes are formed; a first temperature adjustment device (16, 18) capable of adjusting a temperature of the growth region in the first chamber (14); a pressure adjustment device (23, 24) capable of adjusting a pressure in the first chamber (14); a first feed device (30) capable of feeding a carbon source to the growth region in the first chamber (14); and a first vaporization device (including heater (31B)) capable of vaporizing a liquid (L) disposed in the production apparatus (10), wherein the first vaporization device (including heater (31B)) can vaporize the liquid (L) so that at least one kind of gas-phase catalyst is fed to the growth region in the first chamber (14).Type: ApplicationFiled: August 28, 2014Publication date: July 21, 2016Applicants: NATIONAL UNIVERSITY CORPORATION SHIZUOKA UNIVERSIT Y, JNC CORPORATIONInventors: Yoku INOUE, Takayuki NAKANO, Tauto NAKANISHI
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Publication number: 20160207772Abstract: The invention shows a production apparatus for producing carbon nanotubes by the gas-phase catalysis process, comprising: a first chamber having a growth region that is a region in which carbon nanotubes are formed; a first temperature adjustment device capable of adjusting a temperature of the growth region in the first chamber; a pressure adjustment device capable of adjusting a pressure in the first chamber; a first feed device capable of feeding a carbon source to the growth region in the first chamber; a second temperature adjustment device capable of adjusting a temperature of a solid-phase iron family element-containing material disposed in the production apparatus; and a second feed device capable of feeding a gas-phase halogen-containing substance into the production apparatus so that the iron family element-containing material of which the temperature is adjusted to a predetermined temperature by the second temperature adjustment device can react with the halogen-containing substance.Type: ApplicationFiled: August 28, 2014Publication date: July 21, 2016Applicants: NATIONAL UNIVERSITY CORPORATION SHIZUOKA UNIVERSITY, JNC CORPORATIONInventors: Yoku INOUE, Takayuki NAKANO, Tauto NAKANISHI
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Publication number: 20160060116Abstract: A method for producing a carbon nanotube array is provided as a means for enhancing productivity of a CNT array to be produced by a gas-phase catalyst process and a means for enhancing spinning properties of the CNT array, comprising: a first step for allowing a substrate having a base surface being a surface formed of a silicon oxide-containing material, as at least part of a surface thereof, to exist in an atmosphere including a gas-phase catalyst; and a second step for allowing a material gas and a gas-phase co-catalyst to exist in the atmosphere including the gas-phase catalyst to allow a plurality of carbon nanotubes to grow on the base surface of the substrate to obtain on the base surface the carbon nanotube array formed of the plurality of carbon nanotubes.Type: ApplicationFiled: October 12, 2013Publication date: March 3, 2016Inventors: Yoku INOUE, Tauto NAKANISHI
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Patent number: 9212895Abstract: A strain sensor includes a flexible substrate, a CNT film made of a plurality of CNT fibers aligned in an orientation direction, a pair of electrodes, and a protective coat. The electrodes are formed at the opposite ends of the CNT film in a perpendicular direction to the orientation direction of the CNT fibers. The protective coat protecting the CNT film is made of a resin, a water-based emulsion, or an oil-based emulsion. The protective coat is placed in contact with at least part of the CTN fibers on the surface of the CNT film. The strain sensor including the protective coat is able to prevent damage/breakage of the CNT film and to prevent foreign matters from entering into gaps between CNT fibers, thus improving durability in maintaining adequate sensing functionality.Type: GrantFiled: November 9, 2012Date of Patent: December 15, 2015Assignees: YAMAHA CORPORATION, NATIONAL UNIVERSITY CORPORATION SHIZUOKA UNIVERSITYInventors: Katsunori Suzuki, Shingo Sakakibara, Koji Yataka, Yasuro Okumiya, Yoshiki Terada, Yoku Inoue
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Patent number: 9182215Abstract: A strain sensor includes a flexible substrate, a CNT film made of a plurality of CNT fibers aligned in an orientation direction, a pair of electrodes, and a protective coat. The electrodes are formed at the opposite ends of the CNT film in a perpendicular direction to the orientation direction of the CNT fibers. The protective coat protecting the CNT film is made of a resin, a water-based emulsion, or an oil-based emulsion. The protective coat is placed in contact with at least part of the CTN fibers on the surface of the CNT film. The strain sensor including the protective coat is able to prevent damage/breakage of the CNT film and to prevent foreign matters from entering into gaps between CNT fibers, thus improving durability in maintaining adequate sensing functionality.Type: GrantFiled: November 9, 2012Date of Patent: November 10, 2015Assignees: YAMAHA CORPORATION, NATIONAL UNIVERSITY CORPORATION SHIZUOKA UNIVERSITYInventors: Katsunori Suzuki, Shingo Sakakibara, Koji Yataka, Yasuro Okumiya, Yoshiki Terada, Yoku Inoue
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Publication number: 20140331793Abstract: A strain sensor provided with a substrate that has flexibility; a carbon nanotube (CNT) film that is provided on the surface of the substrate and that has a plurality of CNT fibers oriented in one direction; and a pair of electrodes that are arranged at both ends in the orientation direction of the CNT fibers in the CNT film; in which the CNT film has a plurality of CNT fiber bundles that consist of the plurality of CNT fibers, and a resin layer that covers the peripheral surface of the plurality of the CNT fiber bundles and joins with the surface of the substrate.Type: ApplicationFiled: May 9, 2014Publication date: November 13, 2014Applicants: Yamaha Corporation, NATIONAL UNIVERSITY CORPORATION SHIZUOKA UNIVERSITYInventors: KATSUNORI SUZUKI, Shingo Sakakibara, Koji Yataka, Yasuro Okumiya, Masahiro Sugiura, Yoku Inoue
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Publication number: 20140199230Abstract: Carbon nanotubes are grown by supplying raw material gas 30 comprising a carbon compound to be a raw material of the carbon nanotubes into the inside of a reaction vessel tube 14 in which a catalyst 26 to grow the carbon nanotubes is charged. At this time, halogen-containing material gas 32 to reduce the amount of a carbon product such as amorphous carbon produced besides carbon nanotubes that deposits on the surface of catalyst particles 44 due to supply of the raw material gas 30 is further supplied into the inside of the reaction vessel tube 14. Thereby, it is possible to produce elongated carbon nanotubes.Type: ApplicationFiled: May 10, 2012Publication date: July 17, 2014Inventors: Yoku Inoue, Adrian Ghemes, Haibo Zhao
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Patent number: 8246927Abstract: A chemical vapor deposition (CVD) device is equipped with a reaction vessel tube and a small vessel substrate in an electric furnace and with a heater and a thermocouple at the periphery thereof. A gas supply portion is connected to one of the reaction vessel tubes, and a pressure adjusting valve and an exhaust portion are connected to the other of the reaction vessel tubes, controlled by a control section such that the exhaust portion vacuum-exhausts the reaction vessel tube interior, the heater sublimates the small vessel substrate interior by rising temperature of catalyst iron chloride, and the gas supply portion bleeds an acetylene gas into the reaction vessel tube. As a result, iron chloride and the acetylene gas vapor-phase-react, a silicon oxide surface layer is formed to form growth nucleus of carbon nanotubes, and carbon nanotubes are grown so as to be oriented vertically.Type: GrantFiled: February 24, 2009Date of Patent: August 21, 2012Assignee: National University Corporation Shizuoka UniversityInventors: Yoku Inoue, Morihiro Okada
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Publication number: 20110008240Abstract: A chemical vapor deposition (CVD) device is equipped with a reaction vessel tube and a small vessel substrate in an electric furnace and with a heater and a thermocouple at the periphery thereof. A gas supply portion is connected to one of the reaction vessel tubes, and a pressure adjusting valve and an exhaust portion are connected to the other of the reaction vessel tubes, controlled by a control section such that the exhaust portion vacuum-exhausts the reaction vessel tube interior, the heater sublimates the small vessel substrate interior by rising temperature of catalyst iron chloride, and the gas supply portion bleeds an acetylene gas into the reaction vessel tube. As a result, iron chloride and the acetylene gas vapor-phase-react, a silicon oxide surface layer is formed to form growth nucleus of cabon nanotubes, and carbon nanotubes are grown so as to be oriented vertically.Type: ApplicationFiled: February 24, 2009Publication date: January 13, 2011Applicant: National University Corporation Shizuoka UniversityInventors: Yoku Inoue, Morihiro Okada
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Patent number: 7604697Abstract: A heteroepitaxial growth method for gallium nitride yields gallium nitride which contains good quality fine crystals and has excellent optical properties, on a quartz substrate or a silicon substrate. The method comprises a step A of nitriding the surface of the substrate, and a step B of depositing or vapor depositing at least one atom layer of gallium.Type: GrantFiled: March 11, 2005Date of Patent: October 20, 2009Assignee: Yamaha CorporationInventors: Shingo Sakakibara, Yoku Inoue, Hidenori Mimura
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Publication number: 20050239271Abstract: A heteroepitaxial growth method for gallium nitride yields gallium nitride which contains good quality fine crystals and has excellent optical properties, on a quartz substrate or a silicon substrate. The method comprises a step A of nitriding the surface of the substrate and a step B of depositing or vapor depositing at least one atom layer of gallium.Type: ApplicationFiled: March 11, 2005Publication date: October 27, 2005Inventors: Shingo Sakakibara, Yoku Inoue, Hidenori Mimura