Patents by Inventor Yoku Kaino

Yoku Kaino has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Process of fabricating a semiconductor insulated circuit device having a phosphosilicate glass insulating film
    Patent number: 4782037
    Abstract: Herein disclosed is a process of fabricating a semiconductor integrated circuit device, in which there is formed between a conductive layer prepared by covering a polycrystalline silicon layer with either a layer containing a refractory metal of high melting point, i.e., a refractory metal layer or a silicide layer of the refractory metal and a first insulating film made of phosphosilicate glass flowing over said conductive layer containing the refractory metal, a second insulating film preventing the layer containing a refractory metal from peeling from the polycrystalline silicon layer by the glass flow. The second insulating film is formed by deposition to have a thickness not smaller than a predetermined value.
    Type: Grant
    Filed: October 30, 1986
    Date of Patent: November 1, 1988
    Assignees: Hatachi, Ltd, Hitachi Microcomputer Engineering Ltd.
    Inventors: Akihiro Tomozawa, Yoku Kaino, Shigeru Shimada, Nozomi Horino, Yoshiaki Yoshiura, Osamu Tsuchiya, Shozo Hosoda