Patents by Inventor Yon Lee

Yon Lee has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • SILICON CARBIDE SEMICONDUCTOR CONTACT STRUCTURES
    Publication number: 20260059835
    Abstract: A silicon carbide device including a trench contact structure configured to connect to a part of a transistor. The trench contact structure includes a trench having sidewalls, a silicide layer located in the trench and covering the sidewalls, and a metal contact element located in the trench and connected to the part of the transistor via the silicide layer.
    Type: Application
    Filed: April 25, 2025
    Publication date: February 26, 2026
    Inventors: Yanwen Chen, Yon Lee, Tyler Tucker, Jeff Smith, Sara Hahmady, Kris Whitaker
  • Method for manufacturing a silicon carbide device
    Patent number: 12176207
    Abstract: A method of forming a semiconductor structure, the method comprises: providing a non-planar surface in the manufacturing of a silicon carbide (SiC) device; depositing a reflowable dielectric material on said non-planar surface; and heating said reflowable dielectric material to a temperature and for a time sufficient to cause reflowing of said reflowable dielectric material and thereby provide a dielectric layer comprising a substantially planar surface, wherein said dielectric layer is substantially free of voids.
    Type: Grant
    Filed: April 22, 2020
    Date of Patent: December 24, 2024
    Assignee: X-FAB Texas, Inc.
    Inventors: Daniel Mauch, Yon Lee, John Ransom, Stephen Duran
  • METHOD FOR MANUFACTURING A SILICON CARBIDE DEVICE
    Publication number: 20210335607
    Abstract: A method of forming a semiconductor structure, the method comprises: providing a non-planar surface in the manufacturing of a silicon carbide (SiC) device; depositing a reflowable dielectric material on said non-planar surface; and heating said reflowable dielectric material to a temperature and for a time sufficient to cause reflowing of said reflowable dielectric material and thereby provide a dielectric layer comprising a substantially planar surface, wherein said dielectric layer is substantially free of voids.
    Type: Application
    Filed: April 22, 2020
    Publication date: October 28, 2021
    Inventors: Daniel Mauch, Yon Lee, John Ransom, Stephen Duran