Abstract: First lithography and etching are carried out on a semiconductor structure to provide a first intermediate semiconductor structure having a first set of surface features corresponding to a first portion of desired fin formation mandrels. Second lithography and etching are carried out on the first intermediate structure, using a second mask, to provide a second intermediate semiconductor structure having a second set of surface features corresponding to a second portion of the mandrels. The second set of surface features are unequally spaced from the first set of surface features and/or the features have different pitch. The fin formation mandrels are formed in the second intermediate semiconductor structure using the first and second sets of surface features; spacer material is deposited over the mandrels and is etched back to form a third intermediate semiconductor structure having a fin pattern. Etching is carried out on same to produce the fin pattern.

Abstract: The present disclosure discloses a text classification system based on feature selection and a method thereof in the technical field of natural language processing and short text classification, comprising: acquiring a text classification data set; dividing the text classification data set into a training text set and a test text set, and then pre-processing the training text set and the test text set; extracting feature entries from the pre-processed training text set through improved chi-square statistics to form feature subsets; using TF-IWF algorithm to give the weight to the extracted feature entries; based on the weighted feature entries, establishing a short text classification model based on a support vector machine; and classifying the pre-processed test text set by the short text classification model. The present disclosure solves the problem that the short text content is sparse to some extent, thereby improving the performance of short text classification.

Abstract: First lithography and etching are carried out on a semiconductor structure to provide a first intermediate semiconductor structure having a first set of surface features corresponding to a first portion of desired fin formation mandrels. Second lithography and etching are carried out on the first intermediate structure, using a second mask, to provide a second intermediate semiconductor structure having a second set of surface features corresponding to a second portion of the mandrels. The second set of surface features are unequally spaced from the first set of surface features and/or the features have different pitch. The fin formation mandrels are formed in the second intermediate semiconductor structure using the first and second sets of surface features; spacer material is deposited over the mandrels and is etched back to form a third intermediate semiconductor structure having a fin pattern. Etching is carried out on same to produce the fin pattern.

Abstract: A high-strength and corrosion-resistant sucker rod and a preparation process thereof are disclosed. Raw materials for preparing the high-strength and corrosion-resistant sucker rod include, by weight percent, Mn: 0.70% to 1.20%, Cr: 9.50% to 13.50%, Ni: 0.65% to 1.10%, Mo: 0.10% to 0.90%, Cu: 0.28% to 0.56%, C: ?0.07%, Si: ?0.50%, P: ?0.08%, and S: ?0.005%, the balance is Fe and unavoidable impurities. The sucker rod prepared by the new process has an actual grain size equal to or greater than grade 8, excellent mechanical properties that meet the standard of grade HL specified in SY/T5029 Sucker Rods, and excellent corrosion fatigue resistance. The preparation process is simple and easy for operation, and suitable for large-scale promotion.

Abstract: A high-strength and corrosion-resistant sucker rod and a preparation process thereof are disclosed. Raw materials for preparing the high-strength and corrosion-resistant sucker rod include, by weight percent, Mn: 0.70% to 1.20%, Cr: 9.50% to 13.50%, Ni: 0.65% to 1.10%, Mo: 0.10% to 0.90%, Cu: 0.28% to 0.56%, C: ?0.07%, Si: ?0.50%, P: ?0.08%, and S: ?0.005%, the balance is Fe and unavoidable impurities. The sucker rod prepared by the new process has an actual grain size equal to or greater than grade 8, excellent mechanical properties that meet the standard of grade HL specified in SY/T5029 Sucker Rods, and excellent corrosion fatigue resistance. The preparation process is simple and easy for operation, and suitable for large-scale promotion.

Abstract: A new protein capable of modulating or mediating the intracellular activity of RIP in inflammation, cell survival and cell death pathways is provided. DNA encoding it, a method for its production and its uses are also provided.

Abstract: A protein capable of modulating or mediating the intracellular activity of RIP in inflammation, cell survival and cell death pathways is provided. DNA encoding it, a method for its production and its uses are also provided.