Abstract: A delay-locked loop circuit comprising a variable voltage generator and a delay-locked loop. The variable voltage generator is configured to generate a variable bias voltage signal in response to a standby signal. The variable bias voltage signal has differing voltage levels according to operation modes. The operation modes include a standby mode and an active mode. The delay-locked loop is configured to generate an internal clock signal in response to the standby signal and the variable bias voltage signal. The internal clock signal is synchronized with an external clock signal.

Abstract: A driver chip includes a base body, an input terminal section and a first output terminal section. The base body includes a face having a long side and a short side. The input terminal section is formed at a first edge portion of the face along the long side. The first output terminal section is formed at a second edge portion that is opposite to the first edge portion. The input terminal section and the first output terminal section are disposed within about 9d/10 from a center of the long side toward the short side, wherein ‘d’ represents a distance between the center of the long side and the short side.

Abstract: An apparatus and a method for providing music file search function. The apparatus includes an input unit that receives an input of an attribute of a music file to be played, an extract unit that extracts a characteristic segment from the music file according to the input attribute, a 3D-sound generating unit that generates 3D sound from the characteristic segment of the music file along a spatial axis corresponding to the attribute, and an output unit that outputs the 3D sound. The method includes the steps of inputting an attribute of a music file to be played, searching a characteristic segment of the music file according to the input attribute, generating 3D sound from the characteristic segment of the music file along a spatial-axis corresponding to the attribute, and outputting the 3D sound.

Abstract: Provided is a broadband microstrip-waveguide transition apparatus operating in a millimeter waveband. The millimeter-wave band broadband microstrip-waveguide transition apparatus includes a slot for transferring an electromagnetic signal propagating along a microstrip line, a main patch positioned between the slot and a waveguide and resonating from the signal transferred from the slot, and a parasitic patch positioned between the main patch and the waveguide and resonating together with the main patch. According to the millimeter-wave band broadband microstrip-waveguide transition apparatus, it is possible to transfer a signal from the microstrip line to the waveguide, and to increase a resonance bandwidth to a broadband level.

Abstract: Provided is a magnetic head having a magnetic thin film structure that reduces the effect of a stray field and generates a magnetization reversal at a high speed. The magnetic head includes a first pole, a second pole spaced apart from the first pole, and an induction coil that induces a magnetic field in the first and second poles, wherein the first and second poles include a pole tip in which a leakage flux for recording is generated, and a head yoke that guides the flux flowing in the poles, and at least one implant for controlling a magnetic domain, the implant formed in at least one of the first and second poles. The magnetic thin film can effectively reduce the effect of a stray field entering from the outside, and can control a domain wall motion so that high speed magnetic recording is possible, by generating a magnetization reversal at a high speed corresponding to a magnetic field applied by an induction coil.

Abstract: The present invention provide a microorganism comprising an inactivated chromosomal tdcBC gene and an inactivated chromosomal pckA gene, which has remarkably improved productivity of L-threonine. Also, the present invention provides a method of producing L-threonine using the microorganism. The microorganism is prepared by incorporating by a recombination technique an antibiotic resistance gene into a pckA gene on the chromosome of a bacterial strain containing an L-threonine degradation-associated operon gene, tdcBC, which is inactivated. The microorganism has the effect of preventing degradation and intracellular influx of L-threonine due to the inactivation of the tdcBC operon gene, and includes more activated pathways for L-threonine biosynthesis. Therefore, the microorganism is useful for mass production of L-threonine because of being capable of producing L-threonine in high levels and high yields even in the presence of high concentrations of glucose.

Abstract: The present invention is directed to a refrigerator. According to an aspect of the present invention, there is provided a refrigerator including a refrigerating chamber formed at a relatively upper portion of a refrigerator body and a freezing chamber formed at a relatively lower portion of the refrigerator body, which comprises an ice-making chamber which is partitioned in the refrigerating chamber by means of insulating walls and includes an icemaker for making ice and an ice storage for storing the ice made in the icemaker, a first heat exchanger for generating cold air to regulate the temperature in the ice-making chamber, and a second heat exchanger for generating cold air to regulate the temperature in the freezing and refrigerating chambers, wherein the first and second heat exchangers are components of a heat exchange cycle.

Abstract: In a droplet ejector and an ink-jet printhead using the same, the droplet ejector includes a fluid path through which a fluid moves, a nozzle being formed on one end of the fluid path, a volumetric structure formed in the fluid path, the volumetric structure being sensitive to an external stimulus and being capable of varying in size to eject a droplet of the fluid through the nozzle, and a stimulus generator, which applies a stimulus to the volumetric structure to vary a size of the volumetric structure.

Abstract: A method for forming thin films of a semiconductor device is provided. The thin film formation method presented here is based upon a time-divisional process gas supply in a chemical vapor deposition (CVD) method, where the process gases are supplied and purged sequentially, and additionally plasma is generated in synchronization with the cycle of pulsing reactant gases. A method of forming thin films that possess a property of gradient composition profile is also presented.

Abstract: A method and apparatus for compensating tilt. The tilt compensation method includes: obtaining one of a jitter best, an RF envelope, and a focus DC offset (FODC) from a detection signal of the ROM data region and determining whether the obtained value is within a tolerance range; and obtaining an initial skew compensation value using the obtained value when the obtained value is within the tolerance, changing the magnitude of current applied to an actuator designed to perform driving in at least three-axis directions to drive an objective lens of an optical pickup assembly in a radial tilt direction when the obtained value is not within the tolerance range, and repeating the obtaining of one of the jitter best, the RF envelope, and the FODC and changing the magnitude of the current until the obtained value is within the tolerance range.

Abstract: An audio signal switch has a plurality of inputs and an output. Each input is arranged to be selectively connected to the output via a respective transmission chain, each transmission chain includes: a first bipolar transistor, of a first type, connected to the input; a second bipolar transistor, of a second type, complementary to said first configuration, connected to the output; and an intermediate bipolar transistor, of the second type, connected between said first and second transistors. The first and second transistors are arranged in an emitter-follower circuit configuration, and the intermediate transistor is arranged to act as a diode to protect the first transistor from a large reverse voltage applied to its base-emitter junction.

Abstract: The invention provides a vertical group III-nitride light emitting device improved in external extraction efficiency and a method for manufacturing the same. The method includes forming an undoped GaN layer and an insulating layer on a basic substrate. Then, the insulating layer is selectively etched to form an insulating pattern, and an n-doped AlxGayIn(1-x-y)N layer, an active layer and a p-doped AlmGanIn(1-m-n)N layer are sequentially formed on the insulating pattern. A conductive substrate is formed on the p-doped AlmGanIn(1-m-n)N layer. The basic substrate, the undoped gaN layer and the insulating pattern are removed, and an n-electrode is formed on a part of the exposed surface of the n-doped AlxGayIn(1-x-y)N layer.

Abstract: Methods and systems are provided for analyzing parallelism of program code. According to a method, the sequential execution of the program code is simulated so as to trace the execution procedure of the program code, and parallelism of the program code is analyzed based on the result of the trace to the execution procedure of the program code. Execution information of the program code is collected by simulating the sequential execution of the program code, and parallelism of the program code is analyzed based on the collected execution information, so as to allow programmers to perform parallel task partitioning of the program code with respect to a multi-core architecture more effectively, thus increasing the efficiency of parallel software development.

Abstract: An aromatic compound represented by Formula 1 below and an organic light-emitting diode including the same: M1-(B)n-M2 ??(1) The aromatic compound has excellent thermal stability and emission characteristics. Thus, the organic light-emitting diode employing the aromatic compound can exhibit a low driving voltage, high efficiency, and high brightness.

Abstract: A biocompatible coating for solid phase microextraction (SPME) of a small molecule from a biological matrix. The coating comprises SPME particles and a biocompatible polymer. The biocompatible polymer (e.g. polyacrylonitrile) reduces adsorption of proteins or macromolecules onto the SPME particles and allows the SPME particles to extract the small molecule from the matrix. A process for coating a flexible fiber with a biocompatible coating. The process comprises: coating the fiber with a suspension of SPME particles, the SPME particles being suspended in a solution of a biocompatible polymer and a solvent, the biocompatible polymer can comprise polyacrylonitrile (PAN); drying the coated fiber to remove the solvent; and curing the dried coated fiber at an elevated temperature.

Abstract: A nonvolatile semiconductor memory device and a method for manufacturing the same that may include forming an isolation pattern in a substrate, and then etching a portion of the isolation pattern to expose a portion of an active region of the substrate, and then forming high-density second-type ion implantation regions spaced apart at both edges of the active region by performing a tilted ion implantation process, and then forming a high-density first-type ion implantation region as a bit line in the active region, and then forming an insulating layer on the substrate including the high-density first-type ion implantation region, the high-density second-type ion implantation regions and the isolation pattern, and then forming a metal interconnection as a word line on the insulating layer pattern and extending in a direction perpendicular to bit line.

Abstract: A rapid response push-up pull-down buffer circuit configuration is used as an output buffer of a semiconductor memory device. The buffer circuit includes a pre-driver outputting a driving signal in response to an input data. The buffer circuit also includes an output driver driving an output signal in response to the driving signal which also has a driving strength adjusted in response to a level of the output signal. Accordingly, the driving strength can be automatically controlled in response to a level of the output signal which also results in enhancing the response speed of the buffer circuit.

Abstract: Disclosed is a flash memory cell and method of manufacturing the same, and programming/erasing/reading method thereof. The flash memory cell comprises a first tunnel oxide film formed at a given region of a semiconductor substrate, a first floating gate formed on the first tunnel oxide film, a second tunnel oxide film formed over the semiconductor substrate and along one sidewall of the first floating gate, a second floating gate isolated from the first floating gate while contacting the second tunnel oxide film, a dielectric film formed on the first floating gate and the second floating gate, a control gate formed on the dielectric film, a first junction region formed in the semiconductor substrate below one side of the second tunnel oxide film, and a second junction region formed in the semiconductor substrate below one side of the first tunnel oxide film. Therefore, the present invention can implement 2-bit cell or 3-bit cell of a high density using the existing process technology.

Abstract: A receiver comprises two tuners and a DC-to-DC converter (DCC) for generating an increased supply voltage (VH) on the basis of a main supply voltage. Each tuner comprises a tunable circuit (TUC1), which can be tuned by means of a tuning voltage (VT1). Each tuner further comprises a tuning control circuit (TCC1) that is coupled to the DC-to-DC converter (DCC) via a load circuit (LD1) for generating the tuning voltage (VT1). The load circuit (LD1) of at least one of the two tuners comprises a branch (D1) coupled to receive the main supply voltage (VCC). The branch (D1) is conductive when the tuning voltage (VT1) is within a voltage range substantially comprised between 0 and the main supply voltage (VCC).