Abstract: Semiconductor devices may include a plurality of active fins each extending in a first direction on a substrate, a gate structure extending on the active fins in a second direction, and a first source/drain layer on first active fins of the active fins adjacent the gate structure. At least one of two opposing sidewalls of a cross-section of the first source/drain layer taken along the second direction may include a curved portion having a slope with respect to an upper surface of the substrate. The slope may decrease from a bottom toward a top thereof.

Abstract: Semiconductor devices may include a plurality of active fins each extending in a first direction on a substrate, a gate structure extending on the active fins in a second direction, and a first source/drain layer on first active fins of the active fins adjacent the gate structure. At least one of two opposing sidewalls of a cross-section of the first source/drain layer taken along the second direction may include a curved portion having a slope with respect to an upper surface of the substrate. The slope may decrease from a bottom toward a top thereof.

Abstract: Semiconductor devices may include a plurality of active fins each extending in a first direction on a substrate, a gate structure extending on the active fins in a second direction, and a first source/drain layer on first active fins of the active fins adjacent the gate structure. At least one of two opposing sidewalls of a cross-section of the first source/drain layer taken along the second direction may include a curved portion having a slope with respect to an upper surface of the substrate. The slope may decrease from a bottom toward a top thereof.

Abstract: Semiconductor devices may include a plurality of active fins each extending in a first direction on a substrate, a gate structure extending on the active fins in a second direction, and a first source/drain layer on first active fins of the active fins adjacent the gate structure. At least one of two opposing sidewalls of a cross-section of the first source/drain layer taken along the second direction may include a curved portion having a slope with respect to an upper surface of the substrate. The slope may decrease from a bottom toward a top thereof.

Abstract: A method for fabricating a semiconductor device is provided. The method for fabricating a semiconductor device includes forming transistors on a semiconductor substrate, each of the transistors having a gate structure and source/drain regions, forming an oxide film on the transistors, forming a mask film pattern on the oxide film, the mask film pattern comprising a first pattern having a first width and a second pattern having a second width different from the first width, removing a part of the oxide film using the mask film pattern to form first and second trenches, filling the first and second trenches with a nitride film, removing the rest part of the oxide film to form third and fourth trenches, and forming conductive contacts by filling the third and fourth trenches. A top width of each of the third trenches is equal to the first width, and a top width of each of the fourth trenches is equal to the second width.

Abstract: Disclosed is a method for modifying wettability of a surface of an inorganic material, the method comprising the steps of: preparing an inorganic material with a surface; and charging the surface of the inorganic material with positive surface charges obtained from photoelectron-emission by an X-ray irradiation to the surface of the inorganic material.

Abstract: Example embodiments relate to an apparatus for drying a substrate. The apparatus may include a housing including first barrier walls having a first height, a rotary chuck that is disposed within the housing and configured to rotate the substrate, a nozzle system that is disposed above the rotary chuck and configured to supply a fluid onto the substrate, a cleaning liquid supply unit supplying a cleaning liquid for cleaning the substrate to the nozzle system, and a drying liquid supply unit supplying a drying liquid for drying the substrate to the nozzle system.

Abstract: A two-wheel moving device includes a fixed shaft fixed to one side of a body; first and second swing arms having one ends pivotally coupled to the fixed shaft, respectively; a first varying shaft mounted at the other end of the first swing arm in parallel with the fixed shaft; a second varying shaft mounted at the other end of the second swing arm in parallel with the fixed shaft; a first wheel rotatably coupled to the first varying shaft; a second wheel rotatably coupled to the second varying shaft; a first extendable arm having elasticity and having one end coupled to the first swing arm and the other end coupled to the body; a second extendable arm having elasticity and having one end coupled to the second swing arm and the other end coupled to the body; a first motor used for rotating the first wheel; and a second motor used for rotating the second wheel. An autocycle includes such a two-wheel moving device.

Abstract: A motorcycle has at least two independently driven wheels to reduce energy consumption. The independently driven wheels are driven independently.

Abstract: Disclosed is a method for modifying wettability of a surface of an inorganic material, the method comprising the steps of: preparing an inorganic material with a surface; and charging the surface of the inorganic material with positive surface charges obtained from photoelectron-emission by an X-ray irradiation to the surface of the inorganic material.

Abstract: This invention is to manufacturing of SOI (Silicon On Insulator) wafer; with respect to manufacturing of SOI wafer, preparation process of silicon wafer with desired thickness (100), deposition of Alumina (Al2O3) as insulator by an ALE (Atomic Layer Epitaxial) method such as ALCVD, ALD, ASCVD, etc . . . (110), bonding of this wafer with another silicon wafer by various bonding methods (120), Cutting of this bonded wafer by various methods of cutting (130), Polishing the surface of the cut wafer (140). For the insulator material, titanium oxide (TiO2) or tantalum oxide (Ta2O5) can be used other than Alumina (Al2O3) and such bonding process can be done by unibonding method and cutting method can be done by Smart Cut process.

Abstract: This invention is to manufacturing of SOI (Silicon On Insulator) wafer; with respect to manufacturing of SOI wafer, preparation process of silicon wafer with desired thickness (100), deposition of Alumina(Al2O3) as insulator by an ALE (Atomic Layer Epitaxial) method such as ALCVD, ALD, ASCVD, etc . . . (110), bonding of this wafer with another silicon wafer by various bonding methods (120), Cutting of this bonded wafer by various methods of cutting(130), Polishing the surface of the cut wafer (140). For the insulator material, titanium oxide (TiO2) or tantalum oxide(Ta2O5) can be used other than Alumina(Al2O3) and such bonding process can be done by unibonding method and cutting method can be done by Smart Cut process.