Patents by Inventor Yongbum Park

Yongbum Park has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20230292542
    Abstract: A method of increasing light emission efficiency in an organic light emitting diode (OLED) eliminates or reduces at least one waveguide mode selected from the group consisting of: transverse electric (TE0) mode, transverse magnetic (TM1) mode, and combinations thereof by disposing an ultrathin electrically conductive transparent metallic electrode having a first polarity within the OLED. The OLED has a transparent substrate on which the ultrathin electrically conductive transparent metallic electrode is disposed. It also has an emissive active assembly for generating photons defining first and second opposite sides. A conductive transparent metallic electrode is disposed along the first side. A second transparent electrode having a second polarity opposite to the first polarity disposed adjacent to the second side of emissive active assembly. The methods include increasing an external quantum efficiency of the organic light emitting diode to ?about 20%. OLEDs with such a design are also contemplated.
    Type: Application
    Filed: August 3, 2021
    Publication date: September 14, 2023
    Applicant: THE REGENTS OF THE UNIVERSITY OF MICHIGAN
    Inventors: Yongbum PARK, Changyeong JEONG, Lingjie Jay GUO
  • Publication number: 20150253998
    Abstract: A memory system according to the present embodiment includes a first nonvolatile memory. A second nonvolatile memory is of a type different from that of the first nonvolatile memory. A memory controller controls the first and second nonvolatile memories. The second nonvolatile memory is used as a cache memory of the memory controller, and stores therein a logical/physical conversion data showing a correspondence relationship between a physical address of the first nonvolatile memory and a logical address of data.
    Type: Application
    Filed: September 10, 2014
    Publication date: September 10, 2015
    Applicant: Kabushiki Kaisha Toshiba
    Inventor: Yongbum PARK
  • Patent number: 6428672
    Abstract: Disclosed is a technique for manufacturing a Ni—Fe alloy thin foil using a single-step electrodeposition-based plating process without requiring processes such as melting, casting, forging, and rolling. A manufacturing apparatus is provided which includes an electrolyzer adapted to receive an electrolyte containing, as a major component thereof, a solution of nickel and iron compounds, a cathode partially dipped in the electrolyte and arranged in such a fashion that it is rotatable, an anode completely dipped in the electrolyte and arranged in such a fashion that it faces the cathode while being spaced apart from the cathode by a desired distance, and a current supply device adapted to generate a flow of current between the cathode and the anode, whereby a Ni—Fe alloy thin film is electrodeposited to a desired thickness over a surface of the cathode facing the anode, and then peeled off from the surface of the cathode, so that a continuous Ni—Fe alloy thin foil is manufactured.
    Type: Grant
    Filed: August 16, 2000
    Date of Patent: August 6, 2002
    Assignees: Union Steel Manufacturing Co., Ltd., Korea Institute of Industrial Technology
    Inventors: Janghyun Choi, Taihong Yim, Tak Kang, Heungyeol Lee, Joongbae Lee, Sanghyun Jeon, Yongbum Park