Patents by Inventor Yong-Chang Feng

Yong-Chang Feng has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10311907
    Abstract: Provided herein is an apparatus, including a magnetically soft underlayer (SUL); an interlayer stack overlying the SUL, wherein the interlayer stack comprises a seed layer of an fcc material; and a perpendicular magnetic recording layer overlying the interlayer stack, wherein a thickness of the SUL in combination with a distance of the SUL from the perpendicular recording layer is sufficient to orient a total magnetic field corresponding to a magnetic transducer head at an angle of about 45°.
    Type: Grant
    Filed: March 28, 2014
    Date of Patent: June 4, 2019
    Assignee: Seagate Technology LLC
    Inventors: Thomas P. Nolan, Li Tang, Yong-Chang Feng, Zhong (Stella) Wu, Samuel D. Harkness, Hans J. Richter, Youfeng Zheng
  • Publication number: 20140313615
    Abstract: Provided herein is an apparatus, including a magnetically soft underlayer (SUL); an interlayer stack overlying the SUL, wherein the interlayer stack comprises a seed layer of an fcc material; and a perpendicular magnetic recording layer overlying the interlayer stack, wherein a thickness of the SUL in combination with a distance of the SUL from the perpendicular recording layer is sufficient to orient a total magnetic field corresponding to a magnetic transducer head at an angle of about 45°.
    Type: Application
    Filed: March 28, 2014
    Publication date: October 23, 2014
    Applicant: SEAGATE TECHNOLOGY LLC
    Inventors: Thomas P. Nolan, Li Tang, Yong-Chang Feng, Zhong (Stella) Wu, Samuel D. Harkness, Hans J. Richter, Youfeng Zheng
  • Publication number: 20070287031
    Abstract: A perpendicular magnetic recording system, comprises: a perpendicular magnetic recording medium including a non-magnetic substrate having a surface and a stacked plurality of thin film layers forming a layer stack overlying the substrate surface and including a magnetically soft underlayer (SUL) beneath at least one perpendicular magnetic recording layer, wherein the SUL has a saturation magnetization (Ms)—thickness (t) product (Mst) less than about 4 memu/cm2, and a ring-type magnetic transducer head is positioned in spaced adjacency to an upper surface of the layer stack.
    Type: Application
    Filed: June 8, 2006
    Publication date: December 13, 2007
    Inventors: Thomas P. Nolan, Li Tang, Yong-Chang Feng, Zhong (Stella) Wu, Samuel D. Harkness, Hans J. Richter, Youfeng Zheng
  • Patent number: 5878481
    Abstract: A method for forming a magnetic transducer structure. There is first provided a substrate. There is then formed over the substrate a lower magnetic pole layer. There is then formed upon the lower magnetic pole layer a gap filling dielectric layer. There is then formed at least in part upon the gap filling dielectric layer a patterned positive photoresist layer employed in defining through a plating method an upper magnetic pole layer formed at least in part upon the gap filling dielectric layer. The patterned photoresist layer has a first region defining a pole tip of the upper magnetic pole layer and a second region defining a magnetic coil region of the upper magnetic pole layer. The first region of the patterned positive photoresist layer is photoexposed either before or after forming through the plating method the upper magnetic pole layer defined by the patterned positive photoresist layer.
    Type: Grant
    Filed: April 28, 1997
    Date of Patent: March 9, 1999
    Assignee: Headway Technologies, Inc.
    Inventors: Yong-Chang Feng, Cherng-Chyi Han, Cheng Tzong Horng
  • Patent number: 5874010
    Abstract: A method for trimming a pole used in a read-write head comprises the step of depositing a metallic layer on a layer of pole material, patterning the metallic layer so that it can serve as a mask, and ion beam etching the pole material with nitrogen ions. Of importance, a thin nitride layer forms on the metallic layer so that the etch rate of the metallic layer during ion beam etching is slowed. Alternatively, in lieu of the metallic layer, a nitride layer can be used.
    Type: Grant
    Filed: July 17, 1996
    Date of Patent: February 23, 1999
    Assignee: Headway Technologies, Inc.
    Inventors: Arthur Hungshin Tao, Yong-Chang Feng, Cheng Tzong Horng, Cherng-Chyi Han