Patents by Inventor Yong Cheow Gary Lim

Yong Cheow Gary Lim has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of producing a silicon-on-insulator article
    Patent number: 9142448
    Abstract: A method of producing a silicon-on-insulator article, the method including: forming a first aluminum nitride layer thermally coupled to a first silicon substrate; forming a second aluminum nitride layer thermally coupled to a second substrate, the second substrate including at least a surface layer of silicon; bonding the first and second aluminum nitride layers of the first and second substrates together so that the first and second aluminum nitride layers are disposed between the first and second substrates; and removing most of the second substrate to leave a layer of silicon that is electrically insulated from but thermally coupled to the first silicon substrate by the first and second aluminum nitride layers.
    Type: Grant
    Filed: November 2, 2012
    Date of Patent: September 22, 2015
    Assignee: THE SILANNA GROUP PTY LTD
    Inventors: Andrew John Brawley, Petar Branko Atanackovic, Andrew John Black, Yong Cheow Gary Lim
  • METHOD OF PRODUCING A SILICON-ON-INSULATOR ARTICLE
    Publication number: 20140312424
    Abstract: A method of producing a silicon-on-insulator article, the method including: forming a first aluminium nitride layer thermally coupled to a first silicon substrate; forming a second aluminium nitride layer thermally coupled to a second substrate, the second substrate including at least a surface layer of silicon; bonding the first and second aluminium nitride layers of the first and second substrates together so that the first and second aluminium nitride layers are disposed between the first and second substrates; and removing most of the second substrate to leave a layer of silicon that is electrically insulated from but thermally coupled to the first silicon substrate by the first and second aluminium nitride layers.
    Type: Application
    Filed: November 2, 2012
    Publication date: October 23, 2014
    Inventors: Andrew John Brawley, Petar Branko Atanackovic, Andrew John Black, Yong Cheow Gary Lim