Abstract: An apparatus and method for evaluating driving characteristics of a scanner by precisely measuring the driving angle of a scanning mirror rotating within a large angle range of about ±12 degrees. The apparatus includes: a light source emitting a beam; an object lens disposed between the scanning mirror and the light source and having a focal point placed on the scanning mirror; a PSD receiving the beam reflected from the scanning mirror and passed through the object lens for detecting the rotation angles of the scanning mirror; a signal processing unit processing a signal detected by the PSD, wherein the beam reflected from the scanning mirror and passed through the object lens becomes parallel with the beam emitted from the light source and incident onto the object lens regardless of the rotation angles of the scanning mirror.

Abstract: A small structure which uses bonding wires to prevent disturbance and provide support and a method of fabricating the same are provided. The small structure includes a floating body having a plurality of first contact pads, a base having a plurality of second contact pads, and a plurality of bonding wires electrically connecting the first and second contact pads and elastically supporting the floating body. The method of fabricating the small structure includes preparing a base, forming a sacrificial layer on the base, disposing a floating body on the sacrificial layer, connecting the base and the floating body with bonding wires, and removing the sacrificial layer. Thereby, fabrication costs of the small structure are reduced.

Abstract: A electronic pen input device and a coordinate determining method are provided. The electronic pen input device includes an optical 3-dimensional detecting device for detecting orientation angles of a centerline of the pen relative to a ground and a height of the pen over a writing surface, a 3-axis accelerometer for detecting a movement of the pen, and a communication means for sending the detected information to a post processing device.

Abstract: Provided are a structure for detecting a vertical displacement and its manufacturing method. The structure for detecting a vertical displacement includes a body, an inertial mass floated over the body, a plurality of support beams extending from the inertial mass so as to suspend the inertial mass over the body, movable electrodes integrally formed with the inertial mass, and fixed electrodes floated over the body, each being positioned between the neighboring movable electrodes, wherein a vertical length of the movable electrode is different from a vertical length of the fixed electrode. Therefore, the structure and the electrodes can be simultaneously manufactured, thereby making the fabrication process simple. Also, it is possible to manufacture a three-axis accelerometer and a three-axis gyroscope on a single wafer by the same process, to be integrated as a six-axis inertial sensor.

Abstract: Provided are a structure for detecting a vertical displacement and its manufacturing method. The structure for detecting a vertical displacement includes a body, an inertial mass floated over the body, a plurality of support beams extending from the inertial mass so as to suspend the inertial mass over the body, movable electrodes integrally formed with the inertial mass, and fixed electrodes floated over the body, each being positioned between the neighboring movable electrodes, wherein a vertical length of the movable electrode is different from a vertical length of the fixed electrode. Therefore, the structure and the electrodes can be simultaneously manufactured, thereby making the fabrication process simple. Also, it is possible to manufacture a three-axis accelerometer and a three-axis gyroscope on a single wafer by the same process, to be integrated as a six-axis inertial sensor.

Abstract: A electronic pen input device and a coordinate determining method are provided. The electronic pen input device includes an optical 3-dimensional detecting device for detecting orientation angles of a centerline of the pen relative to a ground and a height of the pen over a writing surface, a 3-axis accelerometer for detecting a movement of the pen, and a communication means for sending the detected information to a post processing device.

Abstract: A static random access memory for improving the cell stability during read/write operation is provided. The SRAM comprises: a bit line and an inverted bit line; a memory cell coupled between the bit line and the inverted bit line for storing data; and a re-writing circuit coupled between the bit line and the inverted bit line for re-writing the data stored in the memory cell to the memory cell, in response to, at least, one read/write control signal for controlling read/write operation of the memory cell. The SRAM of this invention can be stably operated under low power voltage and/or at low temperature.

Abstract: A SRAM device according to the present invention performs a stable data latch operation. The present invention provides a negative voltage generator which is coupled to the drive transistors in the SRAM device for providing negative voltage for the drive transistors during a read cycle of the SRAM device when a word line of the SRAM device is activated. The negative voltage generator includes an output terminal coupled to access transistors, a current path for discharging the output terminal up to a ground voltage level in response to control signals, and a pump for pumping the output terminal to make the output terminal be in a negative voltage level.

Abstract: A semiconductor memory device having a plurality of memory blocks for storing data, and a plurality of sense amplifiers for sensing the data stored in the plurality of memory blocks. The semiconductor memory device comprises data bus lines for transferring the data sensed by the plurality of sense amplifiers. The data bus lines are divided into first and second parts. The semiconductor memory device further comprises a data bus line load reduction circuit for selecting one of the divided first and second data bus line parts in response to first and second data bus line control signals. The selected data bus line part inputs the data from one of the plurality of memory blocks selected in response to a memory block address. The other data bus line part, not selected, has a minimized load. The first and second data bus line control signals are produced in response to a most significant bit of the memory block address.

Abstract: Present invention is to provide an semiconductor memory device capable of reducing a static current by turning off a bit line pull-up transistor at a write operation. A cell array divided to a plurality of cell blocks; a block decoder for selecting one of the cell blocks; a bit line for transferring a data between the cell and an external circuit; a bit line pull-up circuit for supplying the bit lines with power for preventing a data sensing error; and a bit line pull-up control circuit for disabling the bit line pull-up circuit of selected cell block at the write operation, to prevent a static current from being caused by the bit line pull-up circuit.

Abstract: The present invention provides a sense amplifier in a semiconductor device, comprising a detector for enabling the sense amplifier in response to the output thereof and disabling the sense amplifier in response to the increase of the output thereof, whereby the detecting means disables the sense amplifier when the output voltage from the sense amplifier increases up to a predetermined voltage level. The sense amplifier prevent data error from being generated and decrease power consumption by using the outputs thereof when the outputs thereof increases to a constant level.