Abstract: The present invention relates to a pharmaceutical composition for diagnosing and treating prostate cancer, capable of targeting PSMA, and a compound provided by one aspect of the present invention has a glutamine-urea-lysine compound to which a radioactive metal-coupled chelator is structurally coupled and to which an aryl group that can additionally bind to PSMA protein is coupled. Coupling between the glutamine-urea-lysine compound and the chelator includes a polar spacer so as to serve the role of reducing in vivo nonspecific coupling and exhibit an effect of being rapidly removed from vital organs, but not from prostate cancer. These characteristics lower the radiation exposure, which is caused by a therapeutic radioisotope-coupled compound, to normal tissue and organs, and thus reduce side effects. In addition, a compound that contains a phenyl group having a coupling force with albumin has an increased residence time in the blood, thereby becoming more accumulated in prostate cancer.

Abstract: A method for manufacturing a semiconductor device includes forming an etch target layer on a semiconductor substrate, forming a first photoresist pattern disposed on the etch target layer, irradiating ultraviolet (UV) light in an oxygen-containing atmosphere to remove the first photoresist pattern from the etch target layer, and forming a second photoresist pattern on the etch target layer.

Abstract: A method for manufacturing a semiconductor device includes forming an etch target layer on a semiconductor substrate, forming a first photoresist pattern disposed on the etch target layer, irradiating ultraviolet (UV) light in an oxygen-containing atmosphere to remove the first photoresist pattern from the etch target layer, and forming a second photoresist pattern on the etch target layer.

Abstract: A semiconductor device including a substrate including a first and second region; a first active region formed in an upper portion of the substrate in the first region; a second active region formed in an upper portion of the substrate in the second region; a first gate structure extending across the first active region, having a first gate length, and including a first high-k dielectric layer, a first lower metal layer, and a first upper metal layer; a second gate structure extending across the second active region, having a second gate length, and including a second high-k dielectric layer, a second lower metal layer having at least one metal layer, and a second upper metal layer; and spacers at sides of each of the first and second gate structures, a cross section of each of the first and second high-k dielectric layers has a U-shape, a cross section of each of the first and second lower metal layers has a U-shape, the first and second lower metal layers covering bottom surfaces and inner side surfaces of