Abstract: An optical transformation module includes a light generator generating a parallel light beam to be incident onto a surface of an inspection object and changing a wavelength of the parallel light beam, and a rotating grating positioned on a path of the parallel light beam and rotatable by a predetermined rotation angle such that the parallel light beam is transformed according to the wavelength of the parallel light beam and the rotation angle of the rotating grating to have a desired incidence angle and a desired incidence position onto the surface of the inspection object.

Abstract: A method of inspecting a resistive defect of a semiconductor device is provided. The method includes loading a semiconductor wafer on a wafer stocker, transferring the semiconductor wafer into a laser anneal module, annealing a portion of the semiconductor wafer using a laser beam in an atmospheric pressure, transferring the annealed semiconductor wafer into an E-beam scanning module in a vacuum, scanning the annealed portions of the semiconductor wafer with an E-beam, and collecting secondary electrons emitted from the annealed portions of the semiconductor wafer.

Abstract: Methods and apparatuses for inspecting a semiconductor device using electron beam are provided. The methods may include performing detection operations on a detection target pattern N times and determining a number of detection operations which have been performed until a maximum secondary electron amount of the detection target pattern is obtained. Each of the detection operations may include irradiating the detection target pattern with an electron beam, interrupting the irradiating and detecting a secondary electron amount of the detection target pattern after a detection waiting time has elapsed since the interrupting the irradiating.

Abstract: An optical transformation module includes a light generator generating a parallel light beam to be incident onto a surface of an inspection object and changing a wavelength of the parallel light beam, and a rotating grating positioned on a path of the parallel light beam and rotatable by a predetermined rotation angle such that the parallel light beam is transformed according to the wavelength of the parallel light beam and the rotation angle of the rotating grating to have a desired incidence angle and a desired incidence position onto the surface of the inspection object.

Abstract: In a method of detecting a defect of a substrate, a first light having a first intensity may be irradiated to a first region of the substrate through a first aperture. A defect in the first region may be detected using a first reflected light from the first region. A second light having a second intensity may be irradiated to a second region of the substrate through a second aperture. A defect in the second region may be detected using a second reflected light from the second region. Thus, the defects by the regions of the substrate may be accurately detected.

Abstract: In a method of detecting a defect of a substrate, a first light having a first intensity may be irradiated to a first region of the substrate through a first aperture. A defect in the first region may be detected using a first reflected light from the first region. A second light having a second intensity may be irradiated to a second region of the substrate through a second aperture. A defect in the second region may be detected using a second reflected light from the second region. Thus, the defects by the regions of the substrate may be accurately detected.

Abstract: A method of measuring a step height of a device using a scanning electron microscope (SEM), the method may include providing a device which comprises a first region and a second region, wherein a step is formed between the first region and the second region, obtaining a SEM image of the device by photographing the device using a SEM, wherein the SEM image comprises a first SEM image region for the first region and a second SEM image region for the second region, converting the SEM image into a gray-level histogram and calculating a first peak value related to the first SEM image region and a second peak value related to the second SEM image region, wherein the first peak value and the second peak value are repeatedly calculated by varying a focal length of the SEM, and determining a height of the step by analyzing a trend of changes in the first peak value according to changes in the focal length and a trend of changes in the second peak value according to the changes in the focal length.

Abstract: Methods and apparatuses for inspecting a semiconductor device using electron beam are provided. The methods may include performing detection operations on a detection target pattern N times and determining a number of detection operations which have been performed until a maximum secondary electron amount of the detection target pattern is obtained. Each of the detection operations may include irradiating the detection target pattern with an electron beam, interrupting the irradiating and detecting a secondary electron amount of the detection target pattern after a detection waiting time has elapsed since the interrupting the irradiating.

Abstract: A method of measuring a step height of a device using a scanning electron microscope (SEM), the method may include providing a device which comprises a first region and a second region, wherein a step is formed between the first region and the second region, obtaining a SEM image of the device by photographing the device using a SEM, wherein the SEM image comprises a first SEM image region for the first region and a second SEM image region for the second region, converting the SEM image into a gray-level histogram and calculating a first peak value related to the first SEM image region and a second peak value related to the second SEM image region, wherein the first peak value and the second peak value are repeatedly calculated by varying a focal length of the SEM, and determining a height of the step by analyzing a trend of changes in the first peak value according to changes in the focal length and a trend of changes in the second peak value according to the changes in the focal length.

Abstract: Disclosed are an apparatus and method for converting the wavelength of an optical signal using a multi-mode Fabry-Perot laser diode. The apparatus controls polarization of an external pump optical signal to output a TE polarized pump optical signal, and controls polarization of a probe optical signal to output a TM polarized probe optical signal. The apparatus couples the TM polarized probe optical signal and TE polarized pump optical signal irrespective of the polarization of the optical signals. The apparatus finely controls the polarization of the pump optical signal and the polarization of the probe optical signal such that they conform to TE and TM modes of the Fabry-Perot laser diode, respectively.