Abstract: Various methods, apparatuses, and systems for sensing a flow of fluid are provided. The apparatus includes, but not limited to: a membrane structure defining a heated area; a heating structure disposed over the membrane structure and configured to heat the heated area, where the heating structure has a centerline; a first thermopile including a plurality of first thermocouples disposed upstream of the centerline, where at least a portion of the plurality of first thermocouples are disposed over the membrane structure and at least one junction of the plurality of first thermocouples has rounded corners; and a second thermopile including a plurality of second thermocouples disposed downstream of the centerline, where at least a portion of the plurality of second thermocouples are disposed over the membrane structure and at least one junction of the plurality of second thermocouples has rounded corners.

Abstract: A fabrication method for protecting an electrical component on a semiconductor device when subjected to exposure to highly energized electrons, such as those emitted during e-beam irradiation, is provided. An example method may include doping one or more lead-out regions providing an electrical connection to the electrical component of the semiconductor device. In addition, the method may further include forming the electrical component to electrically connect to at least one of the one or more lead-out regions by doping the surface of the semiconductor substrate with a second dopant. Further, the method may include forming a protective barrier on the surface of the semiconductor substrate, substantially aligned with the one or more lead-out regions. The method may further comprise creating one or more cap regions substantially covering the entire surface of the semiconductor except for the lead-out regions by doping the surface of the semiconductor with a third dopant.

Abstract: A semiconductor device with two epitaxial layers formed on a substrate. The middle layer of epitaxial material can be formed thin and with an appropriate doping concentration to provide a low avalanche breakdown voltage with a negative resistance characteristic. The top layer of epitaxial material is doped with the same concentration as the substrate to provide a two-terminal thyristor device with symmetrical bidirectional operating characteristics.