Abstract: Disclosed is a patterned light-emission element substrate including a surface consisted of a plurality of cones, and the surface of each cone is roughened by a wet etch roughening treatment to produce a rough surface.

Abstract: The present invention discloses a sapphire substrate structure for pattern etching and method of forming a pattern sapphire substrate (PSS). The sapphire substrate after pattern etching is suitable to be used as the substrate of a light-emitting device. The sapphire substrate structure comprises a photoresist layer, an underlayer, and a sapphire substrate. The photoresist layer is a uniform layer made of G-line photoresist, I-line photoresist, 248 nm DIN photoresist, or 193 nm Arf photoresist and comprises a flat surface. The underlayer is a uniform layer made of an organic or inorganic compound and comprises a flat surface. The sapphire substrate is formed by epitaxy, while the photoresist layer and the underlayer are formed by coating. After the sapphire substrate structure is formed, it is step by step transformed into a pattern sapphire substrate through an exposure/development process, an etching process, and a cleaning process subsequently.

Abstract: This invention discloses a substrate for a light-emitting device and light-emitting device using the same, and the substrate comprises a sapphire substrate. The sapphire substrate comprises a surface having a plurality of cones, heights of the cones are ranged from 1.4-1.9 ?m, diameters of the cones are ranged from 2.4-2.9 ?m, base angles between the bottom of each of the cones and the level surface of the sapphire substrate are ranged from 40°-80°, the plurality of cones are uniformly distributed over the sapphire substrate and do not contact each other, a distance between the apexes of each two neighboring cones is ranged from 2.5-3.5 ?m, a distance between the bottoms of each two neighboring cones is ranged from 0.1-0.6 ?m. Further, the substrate of the light-emitting device further comprises an interlayer covering the sapphire substrate to increase the epitaxy speed and enhance the throughput subsequently.

Abstract: This invention discloses a substrate for a light-emitting device and light-emitting device using the same, and the substrate comprises a sapphire substrate. The sapphire substrate comprises a surface having a plurality of cones, heights of the cones are ranged from 1.6-2.1 ?m, diameters of the cones are ranged from 3.4-3.9 ?m, base angles between the bottom of each of the cones and the level surface of the sapphire substrate are ranged from 40°-80°, the plurality of cones are uniformly distributed over the sapphire substrate and do not contact each other, a distance between apexes of each two neighboring cones is ranged from 3.5-4.5 ?m, a distance between the bottoms of each two neighboring cones is ranged from 0.1-0.6 ?m. Further, the substrate of the light-emitting device further comprises an interlayer covering the sapphire substrate to increase the epitaxy speed and enhance the throughput subsequently.

Abstract: This invention discloses a substrate for a light-emitting device and light-emitting device using the same, and the substrate comprises a sapphire substrate. The sapphire substrate comprises a surface having a plurality of cones, heights of the cones are ranged from 0.6-1.6 ?m, diameters of the cones are ranged from 0.6-1.6 ?m, base angles between the bottom of each of the cones and the level surface of the sapphire substrate are ranged from 40°-80°, the plurality of cones are uniformly distributed over the sapphire substrate and do not contact each other, a distance between the apexes of each two neighboring cones is ranged from 1.7-2.3 ?m, a distance between the bottoms of each two neighboring cones is ranged from 0.4-1.4 ?m. Further, the substrate of the light-emitting device further comprises an interlayer covering the sapphire substrate to increase the epitaxy speed and enhance the throughput subsequently.

Abstract: Disclosed is a structure combining a solar cell and a light-emitting element. The structure includes a light-emitting device having a substrate and a light-emitting structure disposed on the first surface of the substrate. The substrate includes a plurality of cones formed on a second surface opposite to the first surface. The structure also includes a first conductive layer, disposed on the second surface, a power convention layer disposed on the first conductive layer, a second conductive layer disposed on the power conversion layer, and a patterned transparent layer disposed on the second conductive layer. The patterned transparent layer includes a surface consisting of a plurality of cones and disposed on a side opposite to the second conductive layer.

Abstract: A method for forming photoresist patterns includes providing a substrate, forming a bi-layered photoresist on the substrate, and performing a photolithography process to pattern the bi-layered photoresist. The bi-layered photoresist includes a first photoresist layer and a second photoresist layer positioned between the first photoresist layer and the substrate. The first photoresist layer has a first refraction index and the second photoresist layer has a second refraction index, and the second refraction index is larger than the first refraction index.

Abstract: A method for forming photoresist patterns includes providing a substrate, forming a bi-layered photoresist on the substrate, and performing a photolithography process to pattern the bi-layered photoresist. The bi-layered photoresist includes a first photoresist layer and a second photoresist layer positioned between the first photoresist layer and the substrate. The first photoresist layer has a first refraction index and the second photoresist layer has a second refraction index, and the second refraction index is larger than the first refraction index.

Abstract: To avoid the yield of wafers that undergo immersion lithography influencing by delay of post exposure baking (PEB), an operation system adjusts a speed of inputting the wafers to undergo immersion lithography according to a status of wafers that have finished exposure and are waiting for baking. Therefore, the wafers that have finished exposure are transmitted to be baked efficiently and on time.

Abstract: A method of moving bubbles includes utilizing optical tweezers to form a bright photoresist area and a dark photoresist area in the photoresist layer. The bubbles in the photoresist layer move from the bright photoresist area to the dark photoresist area.

Abstract: To avoid the yield of wafers that undergo immersion lithography influencing by delay of post exposure baking (PEB), an operation system adjusts a speed of inputting the wafers to undergo immersion lithography according to a status of wafers that have finished exposure and are waiting for baking. Therefore, the wafers that have finished exposure are transmitted to be baked efficiently and on time.