Abstract: Example systems, apparatuses, and methods are disclosed sensing a flow of fluid using a thermopile-based flow sensing device. An example apparatus includes a flow sensing device comprising a heating structure having a centerline. The flow sensing device may further comprise a thermopile. At least a portion of the thermopile may be disposed over the heating structure. The thermopile may comprise a first thermocouple having a first thermocouple junction disposed upstream of the centerline of the heating structure. The thermopile may further comprise a second thermocouple having a second thermocouple junction disposed downstream of the centerline of the heating structure.

Abstract: Methods and apparatuses associated with an example flow sensing device are provided. In some examples, the flow sensing device may include a flow cap component and a sensor component. In some examples, the flow cap component may include a heating element disposed in a first layer of the flow cap component. In some examples, the sensor component may include at least one thermal sensing element disposed in a second layer of the sensor component. In some examples, the first layer and the second layer are noncoplanar. In some examples, the flow cap component may be bonded to a first surface of the sensor component to form a flow channel. In some examples, the first layer and the second layer may be noncoplanar and separated by the flow channel.

Abstract: Example systems, apparatuses, and methods are disclosed sensing a flow of fluid using a thermopile-based flow sensing device. An example apparatus includes a flow sensing device comprising a heating structure having a centerline. The flow sensing device may further comprise a thermopile. At least a portion of the thermopile may be disposed over the heating structure. The thermopile may comprise a first thermocouple having a first thermocouple junction disposed upstream of the centerline of the heating structure. The thermopile may further comprise a second thermocouple having a second thermocouple junction disposed downstream of the centerline of the heating structure.

Abstract: Methods and apparatuses associated with an example flow sensing device are provided. In some examples, the flow sensing device may include a flow cap component and a sensor component. In some examples, the flow cap component may include a heating element disposed in a first layer of the flow cap component. In some examples, the sensor component may include at least one thermal sensing element disposed in a second layer of the sensor component. In some examples, the first layer and the second layer are noncoplanar. In some examples, the flow cap component may be bonded to a first surface of the sensor component to form a flow channel. In some examples, the first layer and the second layer may be noncoplanar and separated by the flow channel.

Abstract: Methods and apparatuses associated with an example flow sensing device are provided. In some examples, the flow sensing device may include a flow cap component and a sensor component. In some examples, the flow cap component may include a heating element disposed in a first layer of the flow cap component. In some examples, the sensor component may include at least one thermal sensing element disposed in a second layer of the sensor component. In some examples, the first layer and the second layer are noncoplanar. In some examples, the flow cap component may be bonded to a first surface of the sensor component to form a flow channel. In some examples, the first layer and the second layer may be noncoplanar and separated by the flow channel.

Abstract: Methods and apparatuses associated with an example flow sensing device are provided. In some examples, the flow sensing device may include a flow cap component and a sensor component. In some examples, the flow cap component may include a heating element disposed in a first layer of the flow cap component. In some examples, the sensor component may include at least one thermal sensing element disposed in a second layer of the sensor component. In some examples, the first layer and the second layer are noncoplanar. In some examples, the flow cap component may be bonded to a first surface of the sensor component to form a flow channel. In some examples, the first layer and the second layer may be noncoplanar and separated by the flow channel.

Abstract: Embodiments relate generally to systems, devices, and methods for depositing an electrode and an electrolyte on a microelectromechanical system (MEMS) electrochemical sensor. A method may comprise providing a blade on a surface of a substrate; providing a ridge along the perimeter of the substrate; pressing the electrode and the electrolyte onto the blade and the ridge; cutting the electrode into multiple electrodes; positioning the electrolyte to contact the surface, the blade, and the ridge; and positioning the multiple electrodes to contact the surface, the blade, and the ridge.

Abstract: Apparatus and associated methods relate to a micro-electro-mechanical system (MEMS) based gas sensor including an electrolyte contacting one or more top electrode(s) arranged on the bottom surface of a top semiconductor substrate (TSS), and one or more bottom electrode(s) arranged on the top of a bottom semiconductor substrate (BSS), the TSS and BSS joined with an adhesive seal around the electrolyte, the sensor including one or more capillaries providing gaseous communication to the electrolyte from an external ambient environment. The electrodes may be electrically accessed by one or more vias to externally accessible bond pads. In some examples, an electrical connection may be made from an additional bond pad on top of the TSS to the electrolyte. Various embodiments may reduce the size of various gas sensors to advantageously allow their inclusion into portable electronic devices.

Abstract: Example systems, apparatuses, and methods are disclosed sensing a flow of fluid using a thermopile-based flow sensing device. An example apparatus includes a flow sensing device comprising a heating structure having a centerline. The flow sensing device may further comprise a thermopile. At least a portion of the thermopile may be disposed over the heating structure. The thermopile may comprise a first thermocouple having a first thermocouple junction disposed upstream of the centerline of the heating structure. The thermopile may further comprise a second thermocouple having a second thermocouple junction disposed downstream of the centerline of the heating structure.

Abstract: Apparatus and associated fabrication methods related to a micro-electro-mechanical system (MEMS) based electrochemical sensor include an electrolyte contacting two or more electrode(s) arranged on a substrate, and a high surface area electrode disposed on top of at least a sensing electrode of the sensor. Various embodiments of the high surface area electrode may increase a current or potential produced by the MEMS-based electrochemical sensor in response to one or more targeted chemical species or gases, and allow fabrication and operation of smaller electrochemical sensors. The electrodes may be electrically coupled to control and measurement circuitry. In some examples, the control and measurement circuitry may be formed on the same substrate.

Abstract: Example systems, apparatuses, and methods are disclosed sensing a flow of fluid using a thermopile-based flow sensing device. An example apparatus includes a flow sensing device comprising a heating structure having a centerline. The flow sensing device may further comprise a thermopile. At least a portion of the thermopile may be disposed over the heating structure. The thermopile may comprise a first thermocouple having a first thermocouple junction disposed upstream of the centerline of the heating structure. The thermopile may further comprise a second thermocouple having a second thermocouple junction disposed downstream of the centerline of the heating structure.

Abstract: Apparatus and associated methods relate to a micro-electro-mechanical system (MEMS) based gas sensor including an electrolyte contacting one or more top electrode(s) arranged on the bottom surface of a top semiconductor substrate (TSS), and one or more bottom electrode(s) arranged on the top of a bottom semiconductor substrate (BSS), the TSS and BSS joined with an adhesive seal around the electrolyte, the sensor including one or more capillaries providing gaseous communication to the electrolyte from an external ambient environment. The electrodes may be electrically accessed by one or more vias to externally accessible bond pads. In some examples, an electrical connection may be made from an additional bond pad on top of the TSS to the electrolyte. Various embodiments may reduce the size of various gas sensors to advantageously allow their inclusion into portable electronic devices.

Abstract: Embodiments relate generally to systems, devices, and methods for depositing an electrode and an electrolyte on a microelectromechanical system (MEMS) electrochemical sensor. A method may comprise providing a blade on a surface of a substrate; providing a ridge along the perimeter of the substrate; pressing the electrode and the electrolyte onto the blade and the ridge; cutting the electrode into multiple electrodes; positioning the electrolyte to contact the surface, the blade, and the ridge; and positioning the multiple electrodes to contact the surface, the blade, and the ridge.

Abstract: A sensing element having an integrally formed metal-silicide layer with a silicon layer is described. In some instances, the thickness of the metal-silicide layer can be controlled during fabrication such that the sensing element has a desired resistivity and/or a near linear thermal coefficient of resistance (TCR).

Abstract: Improved sensors are disclosed that include a heater resistor and/or one or more sensor resistors. In some instances, the heater resistor may be configured to have a zero or near-zero temperature coefficient of resistance (TCR), while one or more sensor resistors may be configured to have a non-zero higher TCR. In some instances, the heater resistor may include a polysilicon material that is doped with a first concentration of dopant, and the one or more sensing elements may include a polysilicon material that is doped with a second higher concentration of dopant. In some cases, the first concentration of dopant may be configured to provide a heater resistor that has a zero or near-zero temperature coefficient of resistance (TCR).

Abstract: Improved sensors are disclosed that include a heater resistor and/or one or more sensor resistors. In some instances, the heater resistor may be configured to have a zero or near-zero temperature coefficient of resistance (TCR), while one or more sensor resistors may be configured to have a non-zero higher TCR. In some instances, the heater resistor may include a polysilicon material that is doped with a first concentration of dopant, and the one or more sensing elements may include a polysilicon material that is doped with a second higher concentration of dopant. In some cases, the first concentration of dopant may be configured to provide a heater resistor that has a zero or near-zero temperature coefficient of resistance (TCR).

Abstract: A robust sensor, such as a robust flow sensor or pressure sensor, is provided. In one illustrative embodiment, a robust flow sensor includes one or more flow sensor components secured relative to a membrane, and a substrate for supporting the membrane. In some cases, the one or more flow sensor components may be substantially thermally isolated from the substrate by the membrane. One or more wire bond pads may be situated adjacent to a first side of the substrate and may be provided for communicating signals relative to the one or more flow sensor components. A top cap may be situated adjacent to the first side of the substrate and secured relative to the substrate. The top cap may define at least part of a fluid inlet and/or an outlet of the flow sensor assembly, and may at least partially define a flow channel that extends from the inlet, past at least one of the one or more flow sensor components, and out the outlet of the flow sensor assembly.

Abstract: A potassium hydroxide (KOH) etch process can produce deep high aspect ratio trenches in (110) oriented silicon substrates. The trenches, however, are perpendicular to the (111) direction of the silicon substrate's crystal lattice. The trenches are used to produce thermally isolating areas and through the wafer electrical connections. These structures can be produced in a cost effective manner because of the nearly ideal capabilities of the KOH etch process when it is applied to appropriate materials at appropriate orientations.

Abstract: A through-the-wafer (TTW) electrically conductive connection can be produced in a heavily doped substrate. An annular trench is created from one side of the wafer such that the trench almost reaches the second side of the wafer. The annular trench can be filled with an electrically insulating material. Alternatively, an electrically insulating layer can be produced on the sides of the trench which is then filled with any material. After filling the trench, the bottom of the substrate is ground to expose the trench bottom and the front side is polished to expose the trench top. The plug of substrate material inside the annular trench is a TTW electrical connection.