Abstract: An integrated circuit device includes a substrate from which a plurality of fin-type active regions protrude, the plurality of fin-type active regions extending in parallel to one another in a first direction, and a plurality of gate structures and a plurality of fin-isolation insulating portions extending on the substrate in a second direction crossing the first direction and at a constant pitch in the first direction, wherein a pair of fin-isolation insulating portions from among the plurality of fin-isolation insulating portions are between a pair of gate structures from among the plurality of gate structures, and the plurality of fin-type active regions include a plurality of first fin-type regions and a plurality of second fin-type regions.

Abstract: An integrated circuit device includes a substrate having a first region and a second region, a first fin-isolation insulating portion in each of the first region and the second region and having a first width in a first direction, a pair of fin-type active regions spaced apart from each other in each of the first region and the second region with the first fin-isolation insulating portion therebetween, and extending in a straight line in the first direction, a pair of second fin-isolation insulating portions contacting, in each of the first region and the second region, two side walls of the first fin-isolation insulating portion, respectively, each of the two side walls facing the opposite sides in the first direction, and a plurality of gate structures extending in the second direction and comprising a plurality of dummy gate structures.

Abstract: An integrated circuit device includes a substrate having a first region and a second region, a first fin-isolation insulating portion in each of the first region and the second region and having a first width in a first direction, a pair of fin-type active regions spaced apart from each other in each of the first region and the second region with the first fin-isolation insulating portion therebetween, and extending in a straight line in the first direction, a pair of second fin-isolation insulating portions contacting, in each of the first region and the second region, two side walls of the first fin-isolation insulating portion, respectively, each of the two side walls facing the opposite sides in the first direction, and a plurality of gate structures extending in the second direction and comprising a plurality of dummy gate structures.

Abstract: An integrated circuit device includes a substrate from which a plurality of fin-type active regions protrude, the plurality of fin-type active regions extending in parallel to one another in a first direction, and a plurality of gate structures and a plurality of fin-isolation insulating portions extending on the substrate in a second direction crossing the first direction and at a constant pitch in the first direction, wherein a pair of fin-isolation insulating portions from among the plurality of fin-isolation insulating portions are between a pair of gate structures from among the plurality of gate structures, and the plurality of fin-type active regions include a plurality of first fin-type regions and a plurality of second fin-type regions.