Abstract: A light emitting device including a light emitting structure having a first semiconductor layer, a second semiconductor layer, and an active layer between the first and second semiconductor layers; a first electrode electrically connected to the first semiconductor layer; and a second electrode disposed on the second semiconductor layer. Further, the second electrode include a reflective layer disposed on the second semiconductor layer; a metal layer disposed on a side surface of the reflective layer and on a top surface of reflective layer; a first anti-oxidation layer on the metal layer; and a second anti-oxidation layer on the first anti-oxidation layer. In addition, the second anti-oxidation layer is more than 10 times thicker than the first anti-oxidation layer.

Abstract: A light emitting device is disclosed. The light emitting device includes a light emitting structure including a first semiconductor layer doped with a first dopant while including a first region and a second region stepped relative to the first region, a second semiconductor layer doped with a second dopant different from the first dopant while disposed over the second region, and an active layer disposed between the first and second semiconductor layers, a first electrode disposed on the first region, and a functional member disposed between one side surface of the light emitting structure adjacent to the first electrode and the first electrode while being disposed at the first region, wherein the functional member has a thickness greater than a thickness of the first electrode and less than a thickness of the light emitting structure, with respect to a surface of the first region.

Abstract: A light emitting device including a light emitting structure having a first semiconductor layer, a second semiconductor layer, and an active layer between the first and second semiconductor layers; a first electrode electrically connected to the first semiconductor layer; and a second electrode disposed on the second semiconductor layer. Further, the second electrode include a reflective layer disposed on the second semiconductor layer; a metal layer disposed on a side surface of the reflective layer and on a top surface of reflective layer; a first anti-oxidation layer on the metal layer; and a second anti-oxidation layer on the first anti-oxidation layer. In addition, the second anti-oxidation layer is more than 10 times thicker than the first anti-oxidation layer.

Abstract: A light emitting device is disclosed. The light emitting device includes an electrode, which includes a reflective electrode layer disposed over a second semiconductor layer and a bonding electrode layer disposed in at least a partial region of an outer side surface of the reflective electrode layer while coming into contact with the second semiconductor layer. Thus, it may be possible to enhance bonding reliability between the electrode and the semiconductor layer.

Abstract: A light emitting device is disclosed. The light emitting device includes an electrode, which includes a reflective electrode layer disposed over a second semiconductor layer and a bonding electrode layer disposed in at least a partial region of an outer side surface of the reflective electrode layer while coming into contact with the second semiconductor layer. Thus, it may be possible to enhance bonding reliability between the electrode and the semiconductor layer.

Abstract: Embodiments provide a light emitting device comprising a support member, a light emitting structure disposed on the support member, the light emitting structure comprising a first semiconductor layer comprises a first and second regions, a second semiconductor layer disposed on the second region, and an active layer between the first and second semiconductor layers, a first electrode disposed on the first semiconductor layer and a second electrode disposed on the second semiconductor layer, wherein the support member includes metal ions to convert light of a first wavelength emitted from the active layer into light of a second wavelength different from the first wavelength.

Abstract: A light emitting device is disclosed. The light emitting device includes a light emitting structure including a first semiconductor layer doped with a first dopant while including a first region and a second region stepped relative to the first region, a second semiconductor layer doped with a second dopant different from the first dopant while disposed over the second region, and an active layer disposed between the first and second semiconductor layers, a first electrode disposed on the first region, and a functional member disposed between one side surface of the light emitting structure adjacent to the first electrode and the first electrode while being disposed at the first region, wherein the functional member has a thickness greater than a thickness of the first electrode and less than a thickness of the light emitting structure, with respect to a surface of the first region.