Abstract: The present disclosure relates to a printed circuit board including, a first insulating layer, a first metal layer disposed on the first insulating layer, a bridge disposed on the first metal layer and including a bridge insulating layer and a bridge circuit layer, a second insulating layer disposed on the first insulating layer and covering at least a portion of the bridge, a second metal layer disposed on the second insulating layer, and a connecting via penetrating the bridge and the second insulating layer to connect the first metal layer to the second insulating layer. The connecting via is spaced apart from the bridge circuit layer.

Abstract: A substrate processing apparatus having an improved film processing uniformity is provided. The substrate processing apparatus includes a partition configured to provide a gas supply channel and a gas supply unit connected to the gas supply channel. A gas flow channel communicating with the gas supply channel is formed in the gas supply unit. A first through-hole is formed to penetrate through at least a part of the partition. A second through-hole is formed to penetrate through at least a part of the gas supply unit. The first through-hole communicates with the gas flow channel via the second through-hole. The second through-hole is arranged between a center and an edge of the gas flow channel, and is arranged spaced apart from the edge.

Abstract: A substrate processing apparatus having an improved film processing uniformity is provided. The substrate processing apparatus includes a partition configured to provide a gas supply channel and a gas supply unit connected to the gas supply channel. A gas flow channel communicating with the gas supply channel is formed in the gas supply unit. A first through-hole is formed to penetrate through at least a part of the partition. A second through-hole is formed to penetrate through at least a part of the gas supply unit. The first through-hole communicates with the gas flow channel via the second through-hole. The second through-hole is arranged between a center and an edge of the gas flow channel, and is arranged spaced apart from the edge.

Abstract: A substrate processing apparatus includes a partition comprising at least one through-hole, a conduit arranged in the partition through the through-hole, a gas supply unit connected to the conduit, and a low dielectric material provided between a side wall of the through-hole and the conduit.

Abstract: A plasma supply unit includes a first conductive portion, a second conductive portion having at least a part extending to overlap the first conductive portion, and a ground shield located between the first conductive portion and the second conductive portion, and a substrate processing apparatus including the plasma supply unit.

Abstract: A substrate processing apparatus having improved uniformity and speed of reaction is provided. A substrate processing apparatus includes a body portion comprising a discharge path, a gas supply unit connected to the body portion, a first partition extending from the body portion, a second partition extending from the body portion and arranged between the gas supply unit and the first partition, and a substrate support unit configured to have surface-sealing with the first partition, wherein a first region between the first partition and the second partition and a second region between the gas supply unit and the second partition are connected to the discharge path.

Abstract: Provided is a method of depositing a thin film on a pattern structure of a semiconductor substrate, the method including (a) supplying a source gas; (b) supplying a reactive gas; and (c) supplying plasma, wherein the steps (a), (b), and (c) are sequentially repeated on the semiconductor substrate within a reaction space until a desired thickness is obtained, and a frequency of the plasma is a high frequency of 60 MHz or greater.

Abstract: A substrate processing apparatus having an improved film processing uniformity is provided. The substrate processing apparatus includes a partition configured to provide a gas supply channel and a gas supply unit connected to the gas supply channel. A gas flow channel communicating with the gas supply channel is formed in the gas supply unit. A first through-hole is formed to penetrate through at least a part of the partition. A second through-hole is formed to penetrate through at least a part of the gas supply unit. The first through-hole communicates with the gas flow channel via the second through-hole. The second through-hole is arranged between a center and an edge of the gas flow channel, and is arranged spaced apart from the edge.

Abstract: Provided is a method of depositing a thin film on a pattern structure of a semiconductor substrate, the method including (a) supplying a source gas; (b) supplying a reactive gas; and (c) supplying plasma, wherein the steps (a), (b), and (c) are sequentially repeated on the semiconductor substrate within a reaction space until a desired thickness is obtained, and a frequency of the plasma is a high frequency of 60 MHz or greater.

Abstract: Provided is a method of depositing a thin film on a pattern structure of a semiconductor substrate, the method including (a) supplying a source gas; (b) supplying a reactive gas; and (c) supplying plasma, wherein the steps (a), (b), and (c) are sequentially repeated on the semiconductor substrate within a reaction space until a desired thickness is obtained, and a frequency of the plasma is a high frequency of 60 MHz or greater.

Abstract: Provided is a method of depositing a thin film on a pattern structure of a semiconductor substrate, the method including (a) supplying a source gas; (b) supplying a reactive gas; and (c) supplying plasma, wherein the steps (a), (b), and (c) are sequentially repeated on the semiconductor substrate within a reaction space until a desired thickness is obtained, and a frequency of the plasma is a high frequency of 60 MHz or greater.

Abstract: A plasma supply unit includes a first conductive portion, a second conductive portion having at least a part extending to overlap the first conductive portion, and a ground shield located between the first conductive portion and the second conductive portion, and a substrate processing apparatus including the plasma supply unit.

Abstract: A substrate processing apparatus having improved uniformity and speed of reaction is provided. A substrate processing apparatus includes a body portion comprising a discharge path, a gas supply unit connected to the body portion, a first partition extending from the body portion, a second partition extending from the body portion and arranged between the gas supply unit and the first partition, and a substrate support unit configured to have surface-sealing with the first partition, wherein a first region between the first partition and the second partition and a second region between the gas supply unit and the second partition are connected to the discharge path.

Abstract: A substrate processing apparatus includes a partition comprising at least one through-hole, a conduit arranged in the partition through the through-hole, a gas supply unit connected to the conduit, and a low dielectric material provided between a side wall of the through-hole and the conduit.

Abstract: A substrate processing apparatus having an improved film processing uniformity is provided. The substrate processing apparatus includes a partition configured to provide a gas supply channel and a gas supply unit connected to the gas supply channel. A gas flow channel communicating with the gas supply channel is formed in the gas supply unit. A first through-hole is formed to penetrate through at least a part of the partition. A second through-hole is formed to penetrate through at least a part of the gas supply unit. The first through-hole communicates with the gas flow channel via the second through-hole. The second through-hole is arranged between a center and an edge of the gas flow channel, and is arranged spaced apart from the edge.

Abstract: A multilayer electronic component includes a first capacitor including a first capacitor body and first and second external electrodes disposed on outer surfaces of the first capacitor body; and a second capacitor including a second capacitor body and third and fourth external electrodes disposed on outer surfaces of the second capacitor body and electrically connected to the first capacitor. The first and third external electrodes are connected to each other by a first metal terminal enclosing portions of a lower surface of the first external electrode to an upper surface of the third external electrode, and the second and fourth external electrodes are connected to each other by a second metal terminal enclosing portions of a lower surface of the second external electrode and an upper surface of the fourth external electrode.

Abstract: A multilayer electronic component includes a first capacitor including a first capacitor body and first and second external electrodes disposed on outer surfaces of the first capacitor body; and a second capacitor including a second capacitor body and third and fourth external electrodes disposed on outer surfaces of the second capacitor body and electrically connected to the first capacitor. The first and third external electrodes are connected to each other by a first metal terminal enclosing portions of a lower surface of the first external electrode to an upper surface of the third external electrode, and the second and fourth external electrodes are connected to each other by a second metal terminal enclosing portions of a lower surface of the second external electrode and an upper surface of the fourth external electrode.

Abstract: A polyolefin has 1) a density in the range of 0.93 to 0.97 g/cm3, 2) a BOCD (Broad Orthogonal Co-monomer Distribution) index defined by a given equation in the range of 1 to 5, and 3) a molecular weight distribution (weight average molecular weight/number average molecular weight) in the range of 4 to 10. A supported hybrid metallocene catalyst comprises a first metallocene compound represented by a first given formulae, a second metallocene compound represented by one of three given formulae, and a support.

Abstract: Provided is preparation of poly(alkylene carbonate) through alternating copolymerization of carbon dioxide and epoxide. According to the disclosure, by introducing a diepoxide compound to alternating copolymerization of carbon dioxide and epoxide compound using a metal(III) prepared with salen-type ligands containing quaternary ammonium salt as a catalyst, some of the polymer chains may be cross-linked to thus increase an average molecular weight of the copolymer and extend a distribution of molecular weight. A resin prepared according to this method may have high mechanical strength and rheological advantages.

Abstract: Provided is preparation of poly(alkylene carbonate) through alternating copolymerization of carbon dioxide and epoxide. According to the disclosure, by introducing a diepoxide compound to alternating copolymerization of carbon dioxide and epoxide compound using a metal(III) prepared with salen-type ligands containing quaternary ammonium salt as a catalyst, some of the polymer chains may be cross-linked to thus increase an average molecular weight of the copolymer and extend a distribution of molecular weight. A resin prepared according to this method may have high mechanical strength and rheological advantages.