Patents by Inventor Yong H. Lee

Yong H. Lee has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 5336626
    Abstract: The present invention relates to a MESFET in which source and drain regions with inverse slopes are formed on a semi-insulating semiconductor substarate having the insulating layer by using the growth property according to the crystal direction and a channel is electrically separated from the substrate by forming the channel layer and a self-aligned gate electrode sequentially on the top of the void formed by the inverse slopes of the source and drain regions. Thus, the present invention achieves the suppression of the leakage current and the backgating effect without the formation of a buffer layer, the formation of the gate electrode without misalignment, a short effective gate length and a low gate resistivity, thereby operating at high speed.
    Type: Grant
    Filed: March 18, 1993
    Date of Patent: August 9, 1994
    Assignee: Samsung Electronics Co., Ltd.
    Inventor: Yong H. Lee
  • Patent number: 5330927
    Abstract: A static random access memory with a double vertical channel structure capable of providing a highly integrated memory element and a method of the same. On a substrate of a first conductivity type, first and second layers of the same conductivity type are formed, in order. On respective surfaces of the three layers, impurity diffusion regions are formed, centers of which are located on a vertical line. The first layer having the second impurity diffusion region and the second layer having the third impurity diffusion region are removed at their center portions, except for their opposite side portions, thereby forming trenches. In these trenches, gate electrodes and a ground electrode are formed. Accordingly, the first impurity diffusion region and the remaining opposite side portions of second and third impurity diffusion regions become source/drain regions, while the remaining opposite side portions of first and second layers become a double vertical channel region.
    Type: Grant
    Filed: May 5, 1992
    Date of Patent: July 19, 1994
    Assignee: Goldstar Electron Co., Ltd.
    Inventor: Yong H. Lee
  • Patent number: 5243328
    Abstract: A power distribution and anti-theft alarm system for monitoring a plurality of electronic equipment utilizes existing front-end noise suppressor capacitors to provide a return path along the power supply lines of an injected RF current back to the system monitoring. Accordingly, removal or cutting of the power supply cords to the various electronic equipment can be monitored to provide a theft deterrent. Corresponding LEDs are utilized to provide status of the various channels coupled to the power distribution and anti-theft alarm system. Accordingly, power on/off, alarm on/off and electronic equipment status is indicated.
    Type: Grant
    Filed: July 12, 1991
    Date of Patent: September 7, 1993
    Inventors: Jung K. Lee, Yong H. Lee
  • Patent number: 5115442
    Abstract: Top surface emitting, vertical cavity, surface emitting lasers depend upon emission through apertured top surface electrodes. Biasing current, accordingly peripheral to the laser as introduced, follows a path which comes to confluence within the active gain region to effectively attain lasing threshold. The path is consequence of a buried region of increased resistance which encircles the laser at or above the active region. The buried region is produced by ion implantation-induced damage with ion energy magnitude and spectrum chosen to produce an appropriate resistance gradient. Integrated, as well as discrete, lasers are contemplated.
    Type: Grant
    Filed: April 13, 1990
    Date of Patent: May 19, 1992
    Assignee: AT&T Bell Laboratories
    Inventors: Yong H. Lee, Benjamin Tell
  • Patent number: 4980844
    Abstract: The invention provides a method and apparatus for diagnosing the mechanical condition of a machine. The method of the invention includes the following steps: sensing reference vibrational characteristics of a machine in the time domain; creating a reference signature from the reference vibrational characteristics; saving the reference signature; sensing test vibrational characteristics of the same machine in the time domain; creating a test signature from the test vibrational characteristics; automatically computing a measured distance between at least one point of the reference signature and at least one corresponding point on the test signature; automatically comparing the measured distance against a threshold value to determine if the machine is operating normally or abnormally; and providing a signal when the comparison indicates abnormal operation. An apparatus is also disclosed for implementing the method of the invention.
    Type: Grant
    Filed: May 27, 1988
    Date of Patent: December 25, 1990
    Inventors: Victor Demjanenko, Andres Soom, Yong H. Lee, Andrei Reinhorn, Tsu-Teh Soong, David M. Benenson, James E. Neil, Harish K. Naidu, Selwyn Wright
  • Patent number: 4845763
    Abstract: The disclosure reveals a computer vision technique to measure flank and crater wear of a single point cutting tool. This direct tool wear measurement method uses a microscope mounted camera to acquire an image of the tool. Special lighting of a face of the tool shows contrast of the wear region in the image. The image analysis is based on an interactive procedure utilizing a general purpose image processing system. A computer program calculates ten parameters to characterize flank and crater wear.
    Type: Grant
    Filed: November 6, 1987
    Date of Patent: July 4, 1989
    Assignee: General Motors Corporation
    Inventors: Pulak Bandyopadhyay, Dwight A. Blaser, Brian D. Kaminski, Yong H. Lee