Patents by Inventor Yong H. Zhang

Yong H. Zhang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Selectively Si-doped InAs/A1AsSb short-period-superlattices as N-type cladding layers for mid-IR laser structures grown on InAs substrates
    Patent number: 5594750
    Abstract: A MWIR laser is provided having a novel n-type superlattice cladding layer comprising either InAs/AlAs.sub.0.16 Sb.sub.0.84 or In.sub.x Ga.sub.y Al.sub.1-x-y As/AlSb. The n-type superlattice cladding layer may comprise a Si selectively-doped (SD) InAs/AlAs.sub.0.16 Sb.sub.0.84 short-period superlattice (SPS) lattice-matched to an InAs substrate or a Si SD In.sub.x Ga.sub.y Al.sub.1-x-y As/AlSb SPS lattice-matched to a GaSb or InAs substrate. The advantages of the Si SD InAs/AlAs.sub.0.16 Sb.sub.0.84 SPS and Si SD In.sub.x Ga.sub.y Al.sub.1-x-y As/AlSb SPS include: (1) large dynamic range in the electron concentration in the Si-doped n-type cladding layer; and (2) strong hole confinement in the active region. Furthermore, the novel n-type superlattice cladding layer can be deposited without the use of tellurium (Te) which is not a preferred source material for MBE growth of III-V semiconductors.
    Type: Grant
    Filed: June 6, 1995
    Date of Patent: January 14, 1997
    Assignee: Hughes Aircraft Company
    Inventors: Yong H. Zhang, David H. Chow