Abstract: An example of the present invention provides a metal composite catalyst for ammonia decomposition and hydrogen production including a carrier; and Ni metal particles dispersed on a surface of the carrier or inside a pore, in which a content of the Ni metal particle is 15 to 70 parts by weight with reference to 100 parts by weight of the metal composite catalyst, and a diameter of the Ni metal particle is 60 nm or less. More specifically, the metal composite catalyst according to an example of the present invention is manufactured by an ultrasonic method, includes an aging step, and exhibits high efficiency and economy in ammonia decomposition and hydrogen production processes.

Abstract: Provided is a stacked semiconductor package. The stacked semiconductor package of the present invention comprises: a substrate including at least one contact pad; an external chip laminate which includes a plurality of semiconductor chips mounted on the substrate, and which is stacked in multi-steps such that the ends at one side of the plurality of semiconductor chips alternately protrude in opposite directions to expose bonding pads which are formed on the up-face surface; at least one internal chip which is disposed in a mounting space formed between the external chip laminate and substrate so as to be electrically connected to the substrate; and a conductive wire electrically connecting the bonding pad of the semiconductor chip and the contact pad of the substrate.

Abstract: Provided is a stacked semiconductor package. The stacked semiconductor package of the present invention comprises: a substrate including at least one contact pad; an external chip laminate which includes a plurality of semiconductor chips mounted on the substrate, and which is stacked in multi-steps such that the ends at one side of the plurality of semiconductor chips alternately protrude in opposite directions to expose bonding pads which are formed on the up-face surface; at least one internal chip which is disposed in a mounting space formed between the external chip laminate and substrate so as to be electrically connected to the substrate; and a conductive wire electrically connecting the bonding pad of the semiconductor chip and the contact pad of the substrate.

Abstract: Provided is a layered semiconductor package.