Abstract: Disclosed are a hologram reading device and a hologram reading method, the hologram reading device including a hologram element having a hologram pattern, a detector configured to detect a reflection beam generated in the hologram pattern, and a controller connected to the detector and configured to read information the hologram pattern using a detection signal of the reflection beam, wherein the hologram pattern may have the width or diameter smaller than 225 nm.

Abstract: A thin film transistor includes a first gate electrode on a substrate, a gate insulating film on the first gate electrode, a first active layer on the gate insulating film, a drain electrode on one side of the first active layer, a sidewall spacer on a side wall of the drain electrode, and a first source electrode provided on the other side of the first active layer and a sidewall of the sidewall spacer.

Abstract: Provided is an oxide thin film transistor. The transistor includes a gate electrode on a center of a substrate, an active layer provided on the gate electrode and the substrate and including a metal oxide, and a source electrode and a drain electrode provided on the active layer, which is on both sides of the gate electrode. The source electrode and the drain electrode may each include a first metal layer and a second metal layer on the first metal layer.

Abstract: Provided are stretchable electronics and a method for manufacturing the same. The stretchable electronics may include a substrate, a plurality of electronic elements disposed to be spaced apart from each other on the substrate, and a wire structure disposed on the substrate to connect the plurality of electronic elements to each other. The wire structure may include an insulator extending from one of the electronic elements to the other of the adjacent electronic elements and a metal wire configured to cover a top surface and side surfaces of the insulator. The insulator may include at least one bent part in a plan view.

Abstract: Disclosed is an active meta device. The device includes a metal reflective plate, an insulating layer on the metal reflective plate, a first modulation line block provided on one side of the insulating layer, and a second modulation line block provided on another side of the insulating layer facing the first modulation line block.

Abstract: Provided is an operation method for a digital hologram implementation device including a backlight and a spatial light modulator, the operation method including setting an initial phase value of an optical signal to a remedy phase, computing a reduced phase based on the remedy phase, correcting the remedy phase based on a difference between the reduced phase and a preset optimized phase, determining whether the corrected remedy phase is a stabilized phase, performing forward propagation on the stabilized phase and an amplitude of the optical signal, correcting the amplitude of the optical signal, performing backward propagation on the corrected amplitude and the stabilized phase, and determining whether a phase derived by the backward propagation is an optimized phase.

Abstract: Provided is a method for manufacturing a vertical channel thin film transistor. The method for manufacturing the vertical channel thin film transistor includes forming a bottom source drain electrode, forming a first interlayer insulating layer, forming first middle source drain electrodes, forming a second interlayer insulating layer, forming a top source drain electrode, forming an opening through which portions of the bottom source drain electrode, the first middle source drain electrodes, and the top source drain electrode are exposed, forming channel layers, forming a gate insulating layer on the channel layers, the bottom source drain electrode, the first middle source drain electrodes, and the top source drain electrode, and forming gate electrodes on the gate insulating layer.

Abstract: An apparatus which analyses a depth of a holographic image is provided. The apparatus includes an acquisition unit that acquires a hologram, a restoration unit that restores a three-dimensional holographic image by irradiating the hologram with a light source, an image sensing unit that senses a depth information image of the restored holographic image, and an analysis display unit that analyzes a depth quality of the holographic image, based on the sensed depth information image, and the image sensing unit uses a lensless type of photosensor.

Abstract: Disclosed is a meta-structure. The meta-structure includes a lower electrode, a lower insulating layer on the lower electrode, a lower metal oxide layer on the lower insulating layer, a metal layer on the lower metal oxide layer, an upper metal oxide layer on the metal layer, an upper insulating layer on the upper metal oxide layer, and antenna electrodes on the upper insulating layer.

Abstract: A complementary thin film transistor (TFT) includes a substrate and a first TFT and a second TFT disposed on the substrate, wherein a first conductive semiconductor layer of the first TFT and a second gate electrode layer of the second TFT are disposed in the same layer and include the same material.

Abstract: Provided is a liquid crystal display device and a method for operating the liquid crystal display device. In the liquid crystal display device including a plurality of pixels, one pixel of the plurality of pixels includes a first sub pixel and a second sub pixel, which are adjacent to each other. The one pixel includes a first substrate, a first electrode provided on the first substrate, metamaterial layers provided on the first electrode, wherein the metamaterial layers include a first metamaterial layer within the first sub pixel and a second metamaterial layer within the second sub pixel, a liquid crystal layer provided on the first and second metamaterial layers, a second electrode provided on the liquid crystal layer, and a second substrate provided on the second electrode. The first and second metamaterial layers include metamaterials having properties different from each other, respectively.

Abstract: Disclosed is a meta-structure. The meta-structure includes a lower electrode, a lower insulating layer on the lower electrode, a lower metal oxide layer on the lower insulating layer, a lower metal layer on the lower metal oxide layer, a middle metal oxide layer on the lower metal layer, an upper metal layer on the middle metal oxide layer, an upper metal oxide layer on the upper metal layer, an upper insulating layer on the upper metal oxide layer, and antenna electrodes on the upper insulating layer.

Abstract: An embodiment of the inventive concept provides a thin film transistor and a manufacturing method of the same. The manufacturing method includes forming a data electrode on one side of a substrate, forming a spacer layer on a portion of the data electrode and the other side of the substrate, forming a drain electrode on a top surface of the spacer layer, forming an active layer on a sidewall of the spacer layer, the drain electrode, and the data electrode, forming a gate insulation film that covers the active layer on the sidewall of the spacer layer, and forming a doped layer on the gate insulation film and the active layer outside the gate insulation film to form impurity regions at both sides, respectively, of the active layer.

Abstract: Provided are a semiconductor device, a display panel, and a display device including the same. The semiconductor device includes a lower electrode on one side of a substrate, a spacer on another side of the substrate, a middle electrode on the spacer, a lower channel layer on portions of a sidewall of the spacer, the middle electrode, and the lower electrode, a lower gate insulating layer on the lower channel layer, a common gate electrode on the gate insulating layer, an upper gate insulating layer on the common gate electrode, an upper electrode on the spacer and the upper gate insulating layer of the middle electrode, an upper channel layer connected to the upper electrode and disposed on a sidewall of the upper gate insulating layer, and a contact electrode connected to a portion of the upper channel layer and passing through the lower gate insulating layer and the upper gate insulating layer outside the common gate electrode so as to be connected to the lower electrode.

Abstract: Provided is a liquid crystal display device and a method for operating the liquid crystal display device. In the liquid crystal display device including a plurality of pixels, one pixel of the plurality of pixels includes a first sub pixel and a second sub pixel, which are adjacent to each other. The one pixel includes a first substrate, a first electrode provided on the first substrate, metamaterial layers provided on the first electrode, wherein the metamaterial layers include a first metamaterial layer within the first sub pixel and a second metamaterial layer within the second sub pixel, a liquid crystal layer provided on the first and second metamaterial layers, a second electrode provided on the liquid crystal layer, and a second substrate provided on the second electrode. The first and second metamaterial layers include metamaterials having properties different from each other, respectively.

Abstract: Provided are a display device and an augmented reality apparatus including the same. The display device includes a display panel including display blocks and an optics array including pin hole structures that one-to-one correspond to the display blocks. Here, each of the pin hole structures includes a pin hole and a shielding area surrounding the pin hole, and the display blocks are spaced apart from each other in a first direction parallel to a top surface of the display panel and a second direction crossing the first direction and parallel to the top surface of the display panel.

Abstract: Provided are stretchable electronics and a method for manufacturing the same. The stretchable electronics may include a substrate, a plurality of electronic elements disposed to be spaced apart from each other on the substrate, and a wire structure disposed on the substrate to connect the plurality of electronic elements to each other. The wire structure may include an insulator extending from one of the electronic elements to the other of the adjacent electronic elements and a metal wire configured to cover a top surface and side surfaces of the insulator. The insulator may include at least one bent part in a plan view.

Abstract: Provided are a semiconductor device, a display panel, and a display device including the same. The semiconductor device includes a lower electrode on one side of a substrate, a spacer on another side of the substrate, a middle electrode on the spacer, a lower channel layer on portions of a sidewall of the spacer, the middle electrode, and the lower electrode, a lower gate insulating layer on the lower channel layer, a common gate electrode on the gate insulating layer, an upper gate insulating layer on the common gate electrode, an upper electrode on the spacer and the upper gate insulating layer of the middle electrode, an upper channel layer connected to the upper electrode and disposed on a sidewall of the upper gate insulating layer, and a contact electrode connected to a portion of the upper channel layer and passing through the lower gate insulating layer and the upper gate insulating layer outside the common gate electrode so as to be connected to the lower electrode.

Abstract: A method for manufacturing a window includes preparing a liquid crystal device comprising a support substrate, a first electrode, a liquid crystal layer, and a sacrificial structure. The method further includes removing the sacrificial structure from the liquid crystal device, forming a second electrode disposed on a glass layer, and attaching the liquid crystal device to the second electrode.

Abstract: An encapsulated organic light emitting device and a fabrication method thereof are disclosed. An encapsulated organic light emitting device according to an example embodiment includes a plurality of organic light emitting devices formed on a substrate, a partition wall disposed to separate the plurality of organic light emitting devices, a hydrophobic oil filling a housing structure defined by the partition wall, a polymer thin film formed on surfaces of the hydrophobic oil and the partition wall using a photo-curable precursor, and a multi-film laminated on the polymer thin film.