Abstract: Provided are a method of fabricating a multilayered thin film transistor using a plastic substrate and an active matrix display device including the thin film transistor fabricated by the method. The method includes: preparing a substrate formed of plastic; forming a buffer insulating layer on the plastic substrate; forming a silicon layer on the buffer insulating layer; patterning the silicon layer to form an active layer; forming a gate insulating layer on the active layer; stacking a plurality of gate metal layers on the gate insulating layer; patterning the plurality of gate metal layers; and etching a corner region of the lowest gate metal layer formed on the gate insulating layer of the patterned gate metal layers. Accordingly, a gate metal is formed which includes a multilayered gate metal layer and has an etched corner region, thereby reducing an electric field of the corner to reduce a leakage current of the TFT.

Abstract: Provided are a low temperature active matrix display device using a plastic substrate and method of fabricating the same. The low temperature active matrix display device includes: a plastic substrate; a reflection layer disposed on the plastic substrate; a buffer layer disposed on the reflection layer; a thin film transistor disposed on the buffer layer in a first region of the plastic substrate; an interlayer dielectric layer disposed on the thin film transistor; a capacitor disposed in a trench formed in a second region of the plastic substrate and having a first electrode connected to a source electrode and a drain electrode of the thin film transistor, the trench extending from the interlayer dielectric layer to the reflection layer; and a display device having one electrode connected to a second electrode of the capacitor.

Abstract: A method of stacking a flexible substrate is provided. The method includes the steps of: preparing a carrier substrate; stacking an adhesive layer on the carrier substrate; and stacking a flexible substrate having at least one image display device on the adhesive layer using a laminating or pressing method. Thus, the flexible substrate is easily fabricated without modification of conventional mass-production equipment for fabricating a display, and thereby a lightweight, thin, and compact flexible display can be realized.

Abstract: A method of forming a buffer dielectric film in a semiconductor device and a method of manufacturing a thin film transistor using the same are disclosed.

Abstract: A method of forming a buffer dielectric film in a semiconductor device and a method of manufacturing a thin film transistor using the same are disclosed.

Abstract: This invention discloses a semiconductor device which comprises a thin semiconductor substrate; first and second word lines formed on the thin semiconductor substrate; a first source, a common drain and a second source formed on the thin semiconductor substrate; a bit line connected to the common drain; a first capacitor formed in front of the thin semiconductor substrate, with the first capacitor having a first charge storage electrode connected to the first source, a first dielectric film and a first plate electrode; and a second capacitor formed in reverse side of the thin semiconductor substrate, with the second capacitor having a second charge storage electrode connected to the second source, a second dielectric film and a second plate electrode.

Abstract: The object of this invention is to provide novel buprenorphine analgesic analogues represented by following formula(I) and their non-toxic pharmaceutically acceptable salts. ##STR1## wherein R.sub.1 is hydrogen atom, methyl, ethyl, cyclopropyl or cyclobutyl; andR.sub.2 is cyclopropyl or cyclobutyl.

Abstract: The object of the present invention is to provide an improved process for preparing benzodiazepine-3-alkyl carboxylate of formula(I) and its pharmaceutically acceptable salts and esters. ##STR1## wherein R.sup.1 is methyl, ethyl or isopropyl;R.sup.2 and R.sup.3 are each independently hydrogen or C.sub.1 -C.sub.6 lower alkyl;R.sup.4 is hydrogen, halogen or trifluoromethyl;carbon atom denoted as c has the S-- or R, S-- configuration.