Abstract: The present invention relates to a method of controlling the characteristics of a double relaxation oscillation SQUID having a reference junction. In the method of controlling characteristics of a reference junction-type double relaxation oscillation SQUID (RJ-DROS) having a signal SQUID and a reference junction, a reference DC current flows through the reference junction in order to control the characteristics of the DROS. A modulation width of an averaged relaxation voltage, which reacts to a magnetic flux, may be controlled at the reference junction. An amount (modulation depth) of an averaged relaxation voltage, which reacts to a magnetic flux, may be controlled at the reference junction. An amount of an operation application current may be controlled at the reference junction. Accordingly, the reference current of the reference junction can be changed by causing the current to flow through the reference junction.

Abstract: Provided is a layout method for protein-protein interaction networks based on a seed protein, which is for performing multiple stages of nesting centered on a node having a high degree of physical relationship, and performing multiple stages of extension and force directed placement (FDP) with respect to a final nest graph. The layout method includes the steps of: a) extracting a node list of each sub-graph constituting a protein-protein interaction network, and aligning the node list according to adjacency of nodes; b) selecting a seed protein from the aligned node list according to node priority and nest relationship with another node; c) nesting adjacent nodes centered on the selected seed protein to generate a nested node; and d) selecting an initial position of the generated nested node, placing the nodes of the nested nodes on respective division points, centered on the seed protein, and then performing layout.

Abstract: A turbofan integrally formed with a shroud and a method of manufacturing the same. The turbofan includes a rotating plate rotated by a driving motor, a plurality of blades having first ends connected to an outer peripheral portion of a front surface of the rotating plate while being arranged in a radial pattern, a shroud having an annular shape and being integrally formed with second ends of the blades, in which the shroud has an inner diameter equal to or larger than a diameter of the rotating plate, and an auxiliary rotating plate having a diameter larger than the diameter of the rotating plate and being fixed to the rotating plate. Since the inner diameter of the shroud is equal to or larger than the rotating plate, the turbofan is integrally formed with the shroud by a mold.

Abstract: Disclosed is a Bluetooth® moving picture stream transmission terminal for moving picture data stream transmission through Bluetooth® to a moving picture output device. The Bluetooth® terminal provides the moving picture output device with the optimized streaming service by either acquiring the transcoding reference variable according to decoding function included in the moving picture output device when the Audio Video Distribution Transport Protocol (AVDTP) channel of the moving picture output device is opened, or acquiring the transcoding reference variable by using the newly defined transcoding reference variable request/response message after opening the AVDTP channel, and by setting an encoding environment with reference to the acquired transcoding reference variable, and encoding the corresponding moving picture and transmitting stream of the encoded moving picture through Bluetooth®.

Abstract: The present invention relates to a reference-current optimizing apparatus of a double relaxation oscillation SQUID. According to the present invention, the optimizing apparatus is connected to a RJ-DROS in order to vary a reference current. Accordingly, the DROS can have a high response level and can operate stably, by controlling a magnetic flux-voltage conversion characteristic. Furthermore, when the RJ-DROS is fabricated, reference junctions having different critical currents are controlled to have the same reference current. Therefore, the reference junctions can have the same magnetic flux-voltage characteristic. In addition, a preamplifier having a plurality of junction bipolar transistors serves to prevent an input application current of the preamplifier from flowing into the optimizing apparatus when the output of a reference junction is detected. This enables the DROS to operate normally.

Abstract: A system and method for cleaning a substrate, such as a semiconductor wafer, utilizes a rotatable wafer supporting assembly with a cylindrical body to provide stability for the substrate being cleaned, even at high rotational speeds. The rotatable wafer supporting assembly may include wafer holding mechanisms with pivotable confining members that are configured to hold the substrate using centrifugal force when the wafer supporting assembly is rotated. In an embodiment, the cleaning system may include a positioning system operatively connected to an acoustic transducer to provide meaningful control of the acoustic energy applied to a surface of the substrate by selectively changing the distance between the acoustic transducer and the substrate surface so that the substrate can be cleaned more effectively.

Abstract: The present invention relates to a method of controlling the characteristics of a double relaxation oscillation SQUID having a reference junction. In the method of controlling characteristics of a reference junction-type double relaxation oscillation SQUID (RJ-DROS) having a signal SQUID and a reference junction, a reference DC current flows through the reference junction in order to control the characteristics of the DROS. A modulation width of an averaged relaxation voltage, which reacts to a magnetic flux, may be controlled at the reference junction. An amount (modulation depth) of an averaged relaxation voltage, which reacts to a magnetic flux, may be controlled at the reference junction. An amount of an operation application current may be controlled at the reference junction. Accordingly, the reference current of the reference junction can be changed by causing the current to flow through the reference junction.

Abstract: A cold wall chemical vapor deposition apparatus includes: a chamber; a susceptor movable up and down in the chamber by a driving means, the susceptor including a heater and an internal electrode; a heat reflector over the susceptor, the heat reflector reflecting a heat emitted from the heater back to a wafer on the susceptor and serving as an correspondent electrode to the internal electrode; a heater control unit connected to the wafer, the heater and the driving means, the heater control unit sensing a temperature of the wafer, the susceptor moving according to the temperature; a gas supply unit supplying gases to the chamber; and a power source applying a voltage to the chamber.

Abstract: The video data output from the dot-inversion driver is re-arranged in the present invention. According this re-arranged method, the video data output from the even data lines or odd data lines is delayed for one scan line scan time. Then, the re-arranged video data are applied to the liquid crystal display structure whose thin film transistors connected with the same scan line are arranged in alternatingly up-down form to store row-inversion driving data in the pixel region.

Abstract: A cold wall chemical vapor deposition apparatus includes: a chamber; a susceptor movable up and down in the chamber by a driving means, the susceptor including a heater and an internal electrode; a heat reflector over the susceptor, the heat reflector reflecting a heat emitted from the heater back to a wafer on the susceptor and serving as an correspondent electrode to the internal electrode; a heater control unit connected to the wafer, the heater and the driving means, the heater control unit sensing a temperature of the wafer, the susceptor moving according to the temperature; a gas supply unit supplying gases to the chamber; and a power source applying a voltage to the chamber.

Abstract: A system and method for cleaning a substrate, such as a semiconductor wafer, utilizes a rotatable wafer supporting assembly with a cylindrical body to provide stability for the substrate being cleaned, even at high rotational speeds. The rotatable wafer supporting assembly may include wafer holding mechanisms with pivotable confining members that are configured to hold the substrate using centrifugal force when the wafer supporting assembly is rotated. In an embodiment, the cleaning system may include a positioning system operatively connected to an acoustic transducer to provide meaningful control of the acoustic energy applied to a surface of the substrate by selectively changing the distance between the acoustic transducer and the substrate surface so that the substrate can be cleaned more effectively.

Abstract: An apparatus and method for holding a semiconductor wafer utilizes confining members having a wafer engaging end to both support and confine the semiconductor wafer using centrifugal force when the wafer and the confining members are being rotated about a rotational axis. The confining members may be configured to be pivoted when subjected to centrifugal force caused by the rotation of the confining members such that pressure is applied on the wafer edge by the wafer engaging end of each confining member in a radial direction toward the rotational axis when the confining members are pivoted.

Abstract: A system and method for wet cleaning a semiconductor wafer utilizes a nozzle assembly to combine two or more input fluids to form a cleaning fluid at the point-of-use. The input fluids are received at the nozzle assembly and combined in a chamber of the nozzle assembly to form the cleaning fluid. The nozzle assembly may include an acoustic transducer to generate an acoustic energy, one or more valves, e.g., three-way valves, to control the receipt of input fluids and/or a flow control mechanism, e.g., a pressure spring valve, to control dispensing of the cleaning fluid onto a surface of the semiconductor wafer.

Abstract: A cold wall chemical vapor deposition apparatus includes: a chamber; a susceptor movable up and down in the chamber by a driving means, the susceptor including a heater and an internal electrode; a heat reflector over the susceptor, the heat reflector reflecting a heat emitted from the heater back to a wafer on the susceptor and serving as an correspondent electrode to the internal electrode; a heater control unit connected to the wafer, the heater and the driving means, the heater control unit sensing a temperature of the wafer, the susceptor moving according to the temperature; a gas supply unit supplying gases to the chamber; and a power source applying a voltage to the chamber.