Patents by Inventor YONG-HUN AHN

YONG-HUN AHN has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • On-die termination circuit, semiconductor memory device and memory system
    Patent number: 8928349
    Abstract: An ODT circuit is activated/deactivated in response to a latency control signal or a clock enable signal. The ODT circuit includes an ODT control circuit and an ODT section. The ODT control circuit determines an ODT status based on a read latency control signal (RL) and/or a write latency control signal (WL) to generate an ODT control signal. The ODT section is activated/deactivated in response to the ODT control signal.
    Type: Grant
    Filed: January 31, 2013
    Date of Patent: January 6, 2015
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Ki-Seok Oh, Joon-Young Park, Yong-Hun Ahn, Yong-Cheol Bae, Yong-Gwon Jeong, Jong-Hyun Choi
  • ON-DIE TERMINATION CIRCUIT, SEMICONDUCTOR MEMORY DEVICE AND MEMORY SYSTEM
    Publication number: 20140028345
    Abstract: An ODT circuit is activated/deactivated in response to a latency control signal or a clock enable signal. The ODT circuit includes an ODT control circuit and an ODT section. The ODT control circuit determines an ODT status based on a read latency control signal (RL) and/or a write latency control signal (WL) to generate an ODT control signal. The ODT section is activated/deactivated in response to the ODT control signal.
    Type: Application
    Filed: January 31, 2013
    Publication date: January 30, 2014
    Inventors: KI-SEOK OH, JOON-YOUNG PARK, YONG-HUN AHN, YONG-CHEOL BAE, YONG-GWON JEONG, JONG-HYUN CHOI