Patents by Inventor Yong Hwan JANG

Yong Hwan JANG has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Memory device and method of operating the same
    Patent number: 12249375
    Abstract: Provided herein is a memory device that may include a string, a voltage generation circuit, a page buffer, and a channel initializing circuit. The string may include select transistors and memory cells coupled in series between a bit line and a source line. The page buffer may be configured to precharge or discharge the bit line. The voltage generation circuit may be configured to apply a turn-on voltage or a turn-off voltage to select lines coupled to the select transistors, apply at least one operating voltage to word lines coupled to the memory cells, or discharge the select lines or the word lines. The channel initializing circuit may be configured to control the voltage generation circuit and the page buffer so as to initialize a channel of the string when an operation performed on the memory cells is completed or is suspended before being completed.
    Type: Grant
    Filed: November 25, 2022
    Date of Patent: March 11, 2025
    Assignee: SK hynix Inc.
    Inventors: Dong Jun Kim, Hea Jong Yang, Jong Wook Kim, Pyung Hwa Kim, Yong Hwan Jang
  • MEMORY DEVICE AND METHOD OF OPERATING THE SAME
    Publication number: 20240021245
    Abstract: Provided herein is a memory device that may include a string, a voltage generation circuit, a page buffer, and a channel initializing circuit. The string may include select transistors and memory cells coupled in series between a bit line and a source line. The page buffer may be configured to precharge or discharge the bit line. The voltage generation circuit may be configured to apply a turn-on voltage or a turn-off voltage to select lines coupled to the select transistors, apply at least one operating voltage to word lines coupled to the memory cells, or discharge the select lines or the word lines. The channel initializing circuit may be configured to control the voltage generation circuit and the page buffer so as to initialize a channel of the string when an operation performed on the memory cells is completed or is suspended before being completed.
    Type: Application
    Filed: November 25, 2022
    Publication date: January 18, 2024
    Applicant: SK hynix Inc.
    Inventors: Dong Jun KIM, Hea Jong YANG, Jong Wook KIM, Pyung Hwa KIM, Yong Hwan JANG