Abstract: Disclosed is a manufacturing method including: a substrate loading operation of loading a substrate into a liquid treating chamber; a liquid treating operation of supplying a treatment solution to the substrate rotating in the liquid treating chamber through a nozzle; a substrate unloading operation of unloading the substrate from the liquid treating chamber, and a pressure control operation of changing a pressure of a space above the substrate at least one time in a period between the substrate loading operation and the substrate unloading operation.

Abstract: Provided are non-naturally occurring 5?-untranslated region and 3?-untranslated region nucleotides, and use thereof.

Abstract: A method for manufacturing a lightweight cowl crossbar includes: producing an inner pipe, laminating a plurality of composite material layers wound around the inner pipe, and extruding an outer pipe on the winding layer, in which the plurality of composite material layers adjacent to each other are wound in different directions.

Abstract: A rear seat apparatus for a vehicle includes a back frame and a cushion frame. The back frame is not interlocked with the cushion frame and is individually rotated in the forward-and-rearward direction independently of the cushion frame. The cushion frame is not interlocked with the back frame and individually slides in the forward-and-rearward direction independently of the back frame. A front seating state and a rear seating state of a passenger are implemented through individual sliding movement of the cushion frame in the forward-and-rearward direction.

Abstract: An encoding/decoding method and device according to the present disclosure may: determine at least one among a plurality of inter prediction modes as the inter prediction mode of the current block; form an inter prediction candidate list on the basis of the determined inter prediction mode; perform motion compensation on the basis of one prediction candidate in the inter prediction candidate list, and generate a first prediction block of the current block; and correct the first prediction block by using a prescribed intra prediction mode.

Abstract: A substrate processing apparatus is provided and includes: a support unit including a spin chuck and a centering jig that is on the spin chuck, the spin chuck configured to support and rotate a substrate; a spraying unit configured to spray processing liquid onto the substrate; a swing arm including a correction unit that includes a sensor and an emitter, the swing arm configured to move such that the correction unit moves to a target point on the substrate, and the emitter configured to irradiate a beam towards the substrate; and a controller configured to: control the spin chuck and the swing arm; and determine whether a movement trajectory of the swing arm is aligned with a rotation center of the spin chuck based on information acquired by the sensor about the centering jig.

Abstract: An assembly for pushing an electrode into a glass melting vessel can include a frame, a shaft, a pusher actuator, a contact mechanism, a master actuator, and a torque limiter. The contact mechanism can be attached to the shaft. The pusher actuator can be mounted to the frame and configured to cause translation of the shaft and the contact mechanism relative to the frame. The master actuator can be operatively connected to the pusher actuator such that operation of the master actuator causes operation of the pusher actuator. The torque limiter can be operatively connected between the master actuator and the pusher actuator, and can be configured to disengage when a rotational force on the master actuator exceeds a predetermined amount.

Abstract: Provided is a control device and a substrate processing apparatus including the same. The substrate processing apparatus includes a support unit configured to support and rotate a first substrate, the support unit including a spin chuck, a spray unit configured to spray a processing fluid on the first substrate, a correction unit on a swing arm and configured to irradiate a beam onto the first substrate when the processing fluid is provided on the first substrate, wherein the swing arm is adjacent to the spin chuck and is configured to move the correction unit to a target point on the first substrate, and a controller configured to control the spin chuck and the swing arm, and correct a position error of the swing arm using a second substrate, wherein a plurality of anchor patterns are on the second substrate.

Abstract: A control device and a substrate processing apparatus including the same are provided. The substrate processing apparatus includes: a support unit including a spin head and configured to support and to rotate a substrate; a spraying unit configured to spray processing liquid onto the substrate; a correction unit in a swing arm, the correction unit configured to move to a target point on the substrate and to irradiate a beam when the processing liquid is sprayed onto the substrate; and a control unit configured to calculate the target point, wherein the control unit is configured to convert image coordinates associated with a first coordinate system and then to calculate the target point by converting the image coordinates associated with the first coordinate system into image coordinates associated with a second coordinate system, and the second coordinate system is based on rotation angles of the spin head and the swing arm.

Abstract: A multilayer electronic component includes a body including a capacitance formation portion including a dielectric layer and internal electrodes alternately disposed in a first direction, and a cover portion disposed on both surfaces of the capacitance formation portion opposing each other in the first direction; and an external electrode disposed on the body and connected to the internal electrode, wherein the cover portion includes polydopamine.

Abstract: An assembly for pushing an electrode into a glass melting vessel can include a frame, a shaft, a pusher actuator, a contact mechanism, a master actuator, and a torque limiter. The contact mechanism can be attached to the shaft. The pusher actuator can be mounted to the frame and configured to cause translation of the shaft and the contact mechanism relative to the frame. The master actuator can be operatively connected to the pusher actuator such that operation of the master actuator causes operation of the pusher actuator. The torque limiter can be operatively connected between the master actuator and the pusher actuator, and can be configured to disengage when a rotational force on the master actuator exceeds a predetermined amount.

Abstract: According to some embodiments, a gate electrode structure including a gate electrode stack and a spacer, and source/drain region are formed on a semiconductor substrate. A first interlayer insulating layer having a thickness greater than that of the gate electrode structure is formed on the semiconductor substrate. On the first interlayer insulating layer, an etch inducing and focusing mask extending in a same direction as a length direction of the gate electrode structure and covering the gate electrode structure is formed. A second interlayer insulating layer is formed on the first interlayer insulating layer. A photoresist pattern is formed on the second interlayer insulating layer. The second interlayer insulating layer and the first interlayer insulating layer are sequentially etched using the photoresist pattern as an etch mask, thereby forming a SAC hole. A conductive material is used to fill in the SAC hole to form a SAC pad.

Abstract: According to some embodiments, a gate electrode structure including a gate electrode stack and a spacer, and source/drain region are formed on a semiconductor substrate. A first interlayer insulating layer having a thickness greater than that of the gate electrode structure is formed on the semiconductor substrate. On the first interlayer insulating layer, an etch inducing and focusing mask extending in a same direction as a length direction of the gate electrode structure and covering the gate electrode structure is formed. A second interlayer insulating layer is formed on the first interlayer insulating layer. A photoresist pattern is formed on the second interlayer insulating layer. The second interlayer insulating layer and the first interlayer insulating layer are sequentially etched using the photoresist pattern as an etch mask, thereby forming a SAC hole. A conductive material is used to fill in the SAC hole to form a SAC pad.

Abstract: A method is disclosed for manufacturing a semiconductor device. Initially, a conductive layer is formed over a cell array region, in which high-integrated devices are formed, and over a non-cell region, which functions to assist a proper formation of the cell array region. An etching mask pattern is then formed over the conductive layer to form a conductive pattern over the cell array region and to remove the conductive layer formed on the non-cell region. The conductive pattern is actually formed by etching the conductive layer. An ion-assisted plasma etching is then implemented to form a pattern on the cell array region. This prevents the generation of arcing caused by independent conductive patterns formed on the non-cell region during the ion-assisted plasma etching.