Abstract: A lighting apparatus includes a light emitting diode, in which the light emitting diode includes an n-type nitride semiconductor layer, an active layer located on the n-type nitride semiconductor layer, and a p-type nitride semiconductor layer located on the active layer. The light emitting diode emits light that varies from yellow light to white light depending on an driving current.

Abstract: A light emitting diode includes an n-type nitride semiconductor layer, an active layer located on the n-type nitride semiconductor layer, and a p-type nitride semiconductor layer located on the active layer. The active layer has a single structure of a multi-quantum well in which a plurality of barrier layers and a plurality of well layers are stacked, and the active layer emits white light.

Abstract: A method of fabricating a light emitting device includes (i) determining whether each measurement location is defective or not based on a measurement result of the emission wavelength of each location, (ii) forming a test stacked structure by combining one of the first wafers, one of the second wafers, and one of the third wafers in a set of wafers, and (iii) calculating a combination yield of the test stacked structure based on a count of defective measurement locations that overlap in the test stacked structure.

Abstract: A light emitting diode includes an n-type nitride semiconductor layer, a V-pit generation layer located over the n-type nitride semiconductor layer and having a V-pit, an active layer located on the V-pit generation layer, and a p-type nitride semiconductor layer located on the active layer. The active layer includes a well layer, which includes a first well layer portion formed along a flat surface of the V-pit generation layer and a second well layer portion formed in the V-pit of the V-pit generation layer. The light emitting diode emits light having at least two peak wavelengths at a single chip level.

Abstract: A light emitting device includes a substrate; a pattern of a plurality of protrusions protruding from the substrate; a first semiconductor layer provided on the substrate; an active layer provided on the first semiconductor layer; and a second semiconductor layer provided on the active layer, in which each of the protrusions includes a first layer formed integrally with the substrate and protruding from an upper surface of the base substrate; and a second layer provided on the first layer and formed of a material different from that of the first layer.

Abstract: A light emitting device is provided to include an n-type semiconductor layer, a p-type semiconductor layer, an active layer, and an electron blocking layer disposed between the p-type semiconductor layer and the active layer. The p-type semiconductor layer includes a hole injection layer, a p-type contact layer, and a hole transport layer. The hole transport layer includes a plurality of undoped layers and at least one intermediate doped layer disposed between the undoped layers. At least one of the undoped layers includes a zone in which hole concentration decreases with increasing distance from the hole injection layer or the p-type contact layer, and the intermediate doped layer is disposed to be at least partially overlapped with a region of the hole transport layer, the region having the hole concentration of 62% to 87% of the hole concentration of the p-type contact layer.

Abstract: Disclosed are semiconductor devices and methods of manufacturing the same. The semiconductor device includes: a first conductive type semiconductor layer including a first lower conductive type semiconductor layer and a first upper conductive type semiconductor layer; a V-pit passing through at least one portion of the first upper conductive type semiconductor layer; a second conductive type semiconductor layer placed over the first conductive type semiconductor and filling the V-pit; and an active layer interposed between the first and second conductive type semiconductor layers with the V-pit passing through the active layer. The first upper conductive type semiconductor layer has a higher defect density than the first lower conductive type semiconductor layer and includes a V-pit generation layer comprising a starting point of the V-pit.

Abstract: A light emitting device is provided to include an n-type semiconductor layer, a p-type semiconductor layer, an active layer, and an electron blocking layer disposed between the p-type semiconductor layer and the active layer. The p-type semiconductor layer includes a hole injection layer, a p-type contact layer, and a hole transport layer. The hole transport layer includes a plurality of undoped layers and at least one intermediate doped layer disposed between the undoped layers. At least one of the undoped layers includes a zone in which hole concentration decreases with increasing distance from the hole injection layer or the p-type contact layer, and the intermediate doped layer is disposed to be at least partially overlapped with a region of the hole transport layer, the region having the hole concentration of 62% to 87% of the hole concentration of the p-type contact layer.

Abstract: Disclosed are semiconductor devices and methods of manufacturing the same. The semiconductor device includes: a first conductive type semiconductor layer including a first lower conductive type semiconductor layer and a first upper conductive type semiconductor layer; a V-pit passing through at least one portion of the first upper conductive type semiconductor layer; a second conductive type semiconductor layer placed over the first conductive type semiconductor and filling the V-pit; and an active layer interposed between the first and second conductive type semiconductor layers with the V-pit passing through the active layer. The first upper conductive type semiconductor layer has a higher defect density than the first lower conductive type semiconductor layer and includes a V-pit generation layer comprising a starting point of the V-pit.