Abstract: A semiconductor-on-insulator die can include a power amplifier configured to amplify a radio frequency input signal having a fundamental frequency. The die can further include an output matching circuit including first and second second-order harmonic rejection circuits configured to resonate at about two times the fundamental frequency and a third order harmonic rejection circuit configured to resonate at about three times the fundamental frequency.

Abstract: A frame formatting technique for filling a fixed length master frame with a number of variable length frames and adding additional data to synchronize the individual variable length frames and increase the randomness of the fixed length master frame. The technique fills unused portions of the fixed length master frame with random data to maximize the randomness of the fixed length master frame which can be used to produce a well behaved modulated signal for digital broadcasting, thereby increasing the efficiency of digital broadcasting system.

Abstract: Parenteral solutions suitable for intravenous injection are provided comprising amiodarone in an amount of from 0.9 mg/ml to 30 mg/ml, a lactic acid buffer and water, the solution having a pH of 2.5 to 4.5.

Abstract: A simplified method for frequency offset estimation in a TDMA cellular PCS environment using &pgr;/4-shifted DQPSK comprises the steps of multiplying a complex conjugate of a received complex-valued symbol and a succeeding symbol to produce a comparison vector having an angle equal to the phase angle between the received complex-valued symbol and the succeeding symbol, rotating the comparison vector so that the angle thereof is between 0° and 90°, and estimating the frequency offset by determining a constant deviation of the phase angle from an ideal phase angle value of 45° by calculating an average phase angle for a plurality of successive comparison vectors or correlating the rotated comparision vector against a bank of unit vectors to determine a maximum correlation.

Abstract: A simplified method for sampling timing adjustment and frequency offset estimation in a TDMA cellular PCS environment using &pgr;/4 - shifted DQPSK comprises the steps of oversampling a received signal resulting from transmission of sequences of complex-valued symbols at a rate N times the symbol rate thereof so as to produce N sets of samples, comparing for each set of samples the differential phase angle between successively received complex-valued symbols, and determining which set of the N sets of samples has differential phase angles closest to ideal values to thereby obtain an optimal sampling timing. The differential phase angles are measured by multiplying a complex conjugate of a received complex-valued symbol and a succeeding symbol to produce a comparison vector having an angle equal to the differential phase angle between the received complex-valued symbol and the succeeding symbol. The differential phase angles are optionally rotated so that the angle thereof is between 0° and 90°.

Abstract: An acoustic temperature and/or film thickness monitoring system for semiconductor wafers in which the velocity of acoustic waves in the wafer is employed to measure temperature and/or thickness.

Abstract: A multi-zone lamp interference correction system and method for accurate pyrometry-based multi-point wafer temperature measurement in a multi-zone rapid thermal processing system comprises a plurality of lamps arranged in zones. A dummy lamp is also provided for each zone. Each lamp heating zone and its associated dummy lamp are connected to a controllable power supply. The radiance from a particular zone in the wafer combined with the lamp interference associated with the zone is measured using a first plurality of sensors. The lamp radiation from the plurality of dummy lamps are monitored using a second plurality of sensors. For each zone, a lamp interference component is removed from the wafer temperature sensor signal. The lamp interference components are based on geometry factors and the lamp radiance signals.

Abstract: A multi-zone emissivity correction system and method that may be used in a multi-zone illuminator of a RTP-AVP system. The multi-zone illuminator comprises a plurality of lamps arranged in zones. A dummy lamp is also provided for each zone. A first plurality of sensors monitor the wafer and a second plurality of sensors monitor dummy lamp radiance. For each zone, an emissivity factor is determined based on the first and second pluralities of sensors. An effective black body radiance is also determined for each zone based on a wafer radiance factor for each zone and the emissivity factors.

Abstract: A method for manufacturing BiCMOS semiconductor devices in which an oxide layer formed on the surface of a semiconductor substrate for the purpose of facilitating formation of spacers adjacent to sidewalls of the gates of the MOS transistors thereof is only partially removed, by using a dry etching process, to thereby leave a residual oxide layer, which is then removed, by using a wet etching process, to thereby form the spacers. Alternatively, all portions of the oxide layer except a portion thereof overlying the base-emitter region of the bipolar transistor of the BiCMOS device is removed, thereby precluding the necessity of etching the oxide layer away at the base-emitter junction. In either case, the DC forward current gain Hfe and linearity of the bipolar transistor of the BiCMOS device are enhanced.

Abstract: A method for manufacturing BiCMOS semiconductor devices in which an oxide layer formed on the surf ace of a semiconductor substrate for the purpose of facilitating formation of spacers adjacent to sidewalls of the gates of the MOS transistors thereof is only partially removed, by using a dry etching process, to thereby leave a residual oxide layer, which is then removed, by using a wet etching process, to thereby form the spacers. Alternatively, all portions of the oxide layer except a portion thereof overlying the base-emitter region of the bipolar transistor of the BiCMOS device is removed, thereby precluding the necessity of etching the oxide layer away at the base-emitter junction. In either case, the DC forward current gain Hfe and linearity of the bipolar transistor of the BiCMOS device are enhanced.

Abstract: A lighting control device is incorporated in an electric bulb socket (FIG. 2) and uses a rotary switch 2 to connect a mains terminal 10 to the bulb via a direct link, a diode 6 or a triac-diac circuit 4,5 R,C.sub.2 to provide different levels of illumination.