Abstract: A display panel includes a substrate, light emitting structures disposed on an upper surface of the substrate in pixel regions, an encapsulation substrate disposed over the light emitting structures, and a light blocking member disposed on a lower surface of the substrate. The light blocking member has blocking portions corresponding to the pixel regions and openings corresponding to transparent regions.

Abstract: A thin film transistor including a substrate; a first gate electrode on the substrate; a first insulating layer covering the substrate and the first gate electrode; a semiconductor on the first insulating layer and overlapping the first gate electrode; a second insulating layer covering the first insulating layer and the semiconductor; a second gate electrode on the second insulating layer and crossing the first gate electrode in plane; a third insulating layer covering the second gate electrode and the second insulating layer; a first source electrode and a first drain electrode on the third insulating layer and connected to the semiconductor; and a second source electrode and a second drain electrode on a same layer as the first source electrode and the first drain electrode and connected to the semiconductor.

Abstract: An organic light emitting display device includes a substrate, a first insulating layer, a power supply electrode, a second insulating layer, a first electrode, an emission layer, and a second electrode. The substrate has a display region and a transparent region. The first insulating layer is disposed on the substrate. The power supply electrode is disposed on the first insulating layer. The second insulating layer is disposed on the power supply electrode such that an edge portion of the power supply electrode is free from overlap with the second insulating layer. The first electrode is disposed on the second insulating layer and in contact with the edge portion of the power supply electrode. The emission layer is disposed on the first electrode. The second electrode is disposed on the emission layer.

Abstract: A display device includes a substrate and first, second and third thin film transistor. The first thin film transistor is disposed over the substrate, and includes a first gate electrode which has a first transmittance. The second thin film transistor is disposed over the substrate, and includes a second gate electrode which has a second transmittance substantially different from the first transmittance. The third thin film transistor is disposed over the substrate, and includes a third gate electrode which has a third transmittance substantially different from the first transmittance.

Abstract: An organic light emitting display device includes a substrate, a first transistor disposed on the substrate in the opaque region, a second transistor disposed on the substrate in the opaque region, the second transistor being adjacent to the first transistor along a first direction, and a capacitor disposed on the substrate in the opaque region, the capacitor being adjacent to the first transistor along a second direction different from the first direction. Here, the capacitor may include a first capacitor electrode, a dielectric structure including silicon oxynitride and a second capacitor electrode.

Abstract: An organic light emitting display device includes a substrate including a plurality of pixel regions and a plurality of transparent regions, thin film transistors disposed in the pixel regions, an insulation layer disposed on the thin film transistors, first electrodes electrically contacting the thin film transistors, a pixel defining layer including a black material disposed on the first electrodes, organic light emitting structures disposed on the pixel defining layer, and a second electrode disposed on the organic light emitting structures. The pixel defining layer may define an asymmetrical configuration of adjacent transparent regions disposed on opposing sides of corresponding pixel regions.

Abstract: A display device and method of manufacturing the same, the display device having a substrate, a plurality of scattering patterns which are located on the substrate and comprise crystallized metal oxide, a first electrode which is located on the scattering patterns, an organic light-emitting layer which is located on the first electrode, and a second electrode which is located on the organic light-emitting layer.

Abstract: A display device and method of manufacturing the same, the display device having a substrate, a plurality of scattering patterns which are located on the substrate and comprise crystallized metal oxide, a first electrode which is located on the scattering patterns, an organic light-emitting layer which is located on the first electrode, and a second electrode which is located on the organic light-emitting layer.

Abstract: A method of forming contact holes includes: forming a first conductive layer and a second conductive layer; forming an insulating layer on the first conductive layer and the second conductive layer; forming a photoresist pattern which exposes first and second etch surfaces of a top surface of the insulating layer; performing a first etching process on the insulating layer at a first etching rate; and performing a second etching process on the insulating layer at a second etching rate which is higher than the first etching rate, after a top surface of the first conductive layer is exposed through the insulating layer. The first etch surface is on the first conductive layer, the second etch surface is on the second conductive layer, and a distance between the second etch surface and the second conductive layer is greater than a distance between the first etch surface and the first conductive layer.

Abstract: A method of forming contact holes includes: forming a first conductive layer and a second conductive layer; forming an insulating layer on the first conductive layer and the second conductive layer; forming a photoresist pattern which exposes first and second etch surfaces of a top surface of the insulating layer; performing a first etching process on the insulating layer at a first etching rate; and performing a second etching process on the insulating layer at a second etching rate which is higher than the first etching rate, after a top surface of the first conductive layer is exposed through the insulating layer. The first etch surface is on the first conductive layer, the second etch surface is on the second conductive layer, and a distance between the second etch surface and the second conductive layer is greater than a distance between the first etch surface and the first conductive layer.

Abstract: A thin film transistor (TFT) having an offset structure is disclosed. The TFT maintains a sufficiently low “off” current and a sufficiently high “on” current. The TFT includes an active region. The active region includes a gate electrode; an active layer that overlaps with the gate electrode; a gate insulating layer between the gate electrode and the active layer; and a source/drain electrode layer including source/drain electrodes that are electrically connected to the active region. Some of the source/drain electrodes overlap partially with the gate electrode. Other of the source/drain electrodes are offset from the gate electrode. The source/drain electrodes and the gate electrode are in a symmetrical arrangement.

Abstract: A thin film transistor includes a substrate, a gate electrode on the substrate, a gate insulating layer covering the gate electrode, a first semiconductor layer and a second semiconductor layer overlapping the gate electrode on the gate insulating layer and separated from each other, a first source electrode and a first drain electrode on the first semiconductor layer and on opposite sides of the gate electrode, and a second source electrode and a second drain electrode on the second semiconductor layer and on opposite sides of the gate electrode, wherein the first source electrode is coupled to the second source electrode through a source connection overlapping the gate electrode, and the first drain electrode is coupled to the second drain electrode, such that the on current and off current characteristics of the thin film transistor may be constantly maintained regardless of alignment error.

Abstract: A thin film transistor (TFT) having an offset structure is disclosed. The TFT maintains a sufficiently low “off” current and a sufficiently high “on” current. The TFT includes an active region. The active region includes a gate electrode; an active layer that overlaps with the gate electrode; a gate insulating layer between the gate electrode and the active layer; and a source/drain electrode layer including source/drain electrodes that are electrically connected to the active region. Some of the source/drain electrodes overlap partially with the gate electrode. Other of the source/drain electrodes are offset from the gate electrode. The source/drain electrodes and the gate electrode are in a symmetrical arrangement.

Abstract: In condition-dependent icon generation for a vehicular information terminal, a strength of a signal indicative of vehicle location information is measured, a road speed limit is determined based upon the vehicle location information, and vehicle speed information is received. Indicators are selected based upon the strength of the signal, the road speed limit, and the vehicle speed information, an icon is generated based upon the selected indicators, and the icon is displayed.