Patents by Inventor Yong Jae Jeon

Yong Jae Jeon has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • PLASMA PROCESS UNIFORMITY BY WAFER BACK SIDE DOPING
    Publication number: 20240112904
    Abstract: Disclosed are systems and methods for improving front-side process uniformity by back-side doping. In some implementations, a highly conductive doped layer can be formed on the back side of a semiconductor wafer prior to certain process steps such as plasma-based processes. Presence of such a back-side doped layer reduces variations in, for example, thickness of a deposited and/or etched layer resulting from the plasma-based processes. Such reduction in thickness variations can result from reduced variation in radio-frequency (RF) coupling during the plasma-based processes.
    Type: Application
    Filed: September 20, 2023
    Publication date: April 4, 2024
    Inventors: Kezia Cheng, Kwang Jae Shin, Taecheol Shon, Yong Woo Jeon, Alan Sangone Chen
  • Display device
    Patent number: 11943878
    Abstract: A display device includes a display panel; a first upper support member on the display panel; and a second upper support member on the display panel and spaced from the first upper support member; and a blocking member including a blocking part crossing the first upper support member and the second upper support member, a first stretchable part connected to a side of the blocking part and including a plurality of openings, a second stretchable part connected to another side of the blocking part and including a plurality of openings, a first fixing part connected to the first stretchable part, and a second fixing part connected to the second stretchable part.
    Type: Grant
    Filed: September 7, 2021
    Date of Patent: March 26, 2024
    Assignee: Samsung Display Co., Ltd.
    Inventors: Sung Ki Jung, Da Som Gu, Yun Jae Kim, Jai Ku Shin, Yong Chan Jeon, Hyun Been Hwang
  • Mutant microorganisms having a high ability to produce putrescine and method for producing putrescine using the same
    Patent number: 8481293
    Abstract: Provided are mutant microorganisms having the ability to produce a high concentration of putrescine wherein gene(s) involved in the putrescine degradation or utilization pathway is inactivated or deleted and a preparation method thereof. A method for producing putrescine in high yield by culturing the mutant microorganisms is also provided. The mutant microorganisms are useful for producing a high concentration of putrescine which can be widely used in various industrial applications.
    Type: Grant
    Filed: October 14, 2009
    Date of Patent: July 9, 2013
    Assignee: Korea Advanced Institute of Science and Technology
    Inventors: Sang Yup Lee, Zhi Gang Qian, Xiaoxia Xia, Yong Jae Jeon
  • MUTANT MICROORGANISMS HAVING A HIGH ABILITY TO PRODUCE PUTRESCINE AND METHOD FOR PRODUCING PUTRESCINE USING THE SAME
    Publication number: 20100203599
    Abstract: Provided are mutant microorganisms having the ability to produce a high concentration of putrescine wherein gene(s) involved in the putrescine degradation or utilization pathway is inactivated or deleted and a preparation method thereof. A method for producing putrescine in high yield by culturing the mutant microorganisms is also provided. The mutant microorganisms are useful for producing a high concentration of putrescine which can be widely used in various industrial applications.
    Type: Application
    Filed: October 14, 2009
    Publication date: August 12, 2010
    Applicant: KOREA ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY
    Inventors: Sang Yup Lee, Zhi Gang Qian, Xiaoxia Xia, Yong Jae Jeon