Patents by Inventor Yong Jae Ko
Yong Jae Ko has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240097580Abstract: An inverter driving apparatus includes an inverter having a plurality of legs respectively corresponding to each of a plurality of phases and the control unit generating space vector modulation signals based on a phase voltage command, each of the space vector modulation signals corresponding to each of the plurality of phases, respectively, determining whether an output voltage of the inverter corresponding to at least one space vector modulation signal of the space vector modulation is in a non-linear region by determining whether each voltage of the space vector modulation signals is included in a predetermined range, generating a terminal voltage command by determining whether or not to apply an offset voltage to each of the space vector modulation signals based on the determination of the non-linear region, and controlling a turn-on state of at least one switch included in each of the plurality of legs by modulating the terminal voltage command based on pulse width modulation.Type: ApplicationFiled: November 11, 2022Publication date: March 21, 2024Applicants: Hyundai Motor Company, Kia CorporationInventors: Hyun Jae LIM, Yong Jae LEE, Young Ho CHAE, Young Kwan KO, Young Gi LEE
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Patent number: 11854991Abstract: In one example, a semiconductor device comprises a main substrate having a top side and a bottom side, a first electronic component on the top side of the main substrate, a second electronic component on the bottom side of the main substrate, a substrate structure on the bottom side of the main substrate adjacent to the second electronic component, and an encapsulant structure comprising an encapsulant top portion on the top side of the main substrate and contacting a side of the first electronic component, and an encapsulant bottom portion on the bottom side of the main substrate and contacting a side of the second electronic component and a side of the substrate structure. Other examples and related methods are also disclosed herein.Type: GrantFiled: October 26, 2021Date of Patent: December 26, 2023Assignee: Amkor Technology Singapore Holding Pte. Ltd.Inventors: Jin Seong Kim, Yeong Beom Ko, Kwang Seok Oh, Jo Hyun Bae, Sung Woo Lim, Yun Ah Kim, Yong Jae Ko, Ji Chang Lee
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Publication number: 20220181265Abstract: In one example, a semiconductor device comprises a main substrate having a top side and a bottom side, a first electronic component on the top side of the main substrate, a second electronic component on the bottom side of the main substrate, a substrate structure on the bottom side of the main substrate adjacent to the second electronic component, and an encapsulant structure comprising an encapsulant top portion on the top side of the main substrate and contacting a side of the first electronic component, and an encapsulant bottom portion on the bottom side of the main substrate and contacting a side of the second electronic component and a side of the substrate structure. Other examples and related methods are also disclosed herein.Type: ApplicationFiled: October 26, 2021Publication date: June 9, 2022Inventors: Jin Seong Kim, Yeong Beom Ko, Kwang Seok Oh, Jo Hyun Bae, Sung Woo Lim, Yun Ah Kim, Yong Jae Ko, Ji Chang Lee
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Patent number: 11158582Abstract: In one example, a semiconductor device comprises a main substrate having a top side and a bottom side, a first electronic component on the top side of the main substrate, a second electronic component on the bottom side of the main substrate, a substrate structure on the bottom side of the main substrate adjacent to the second electronic component, and an encapsulant structure comprising an encapsulant top portion on the top side of the main substrate and contacting a side of the first electronic component, and an encapsulant bottom portion on the bottom side of the main substrate and contacting a side of the second electronic component and a side of the substrate structure. Other examples and related methods are also disclosed herein.Type: GrantFiled: December 4, 2019Date of Patent: October 26, 2021Assignee: Amkor Technology Singapore Holding Pte. Ltd.Inventors: Jin Seong Kim, Yeong Beom Ko, Kwang Seok Oh, Jo Hyun Bae, Sung Woo Lim, Yun Ah Kim, Yong Jae Ko, Ji Chang Lee
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Patent number: 11043458Abstract: A method of manufacturing an electronic device. For example and without limitation, various aspects of the present disclosure provide a method of manufacturing an electronic device that comprises a die comprising a circuit side and a second die side opposite the circuit side, a through hole in the die that extends between the second side of the die and the circuit side of the die, an insulating layer coupled to the inner wall of the through hole, a through electrode inside of the insulating layer, a dielectric layer coupled to the second side of the die, and a conductive pad coupled to the through electrode. The through electrode and the insulating layer may, for example, extend substantially the same distance from the second side of the die.Type: GrantFiled: September 9, 2019Date of Patent: June 22, 2021Assignee: Amkor Technology Singapore Holding Pte. Ltd.Inventors: Won Chul Do, Yong Jae Ko
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Publication number: 20210175177Abstract: In one example, a semiconductor device comprises a main substrate having a top side and a bottom side, a first electronic component on the top side of the main substrate, a second electronic component on the bottom side of the main substrate, a substrate structure on the bottom side of the main substrate adjacent to the second electronic component, and an encapsulant structure comprising an encapsulant top portion on the top side of the main substrate and contacting a side of the first electronic component, and an encapsulant bottom portion on the bottom side of the main substrate and contacting a side of the second electronic component and a side of the substrate structure. Other examples and related methods are also disclosed herein.Type: ApplicationFiled: December 4, 2019Publication date: June 10, 2021Applicant: Amkor Technology Singapore Holding Pte. Ltd.Inventors: Jin Seong Kim, Yeong Beom Ko, Kwang Seok Oh, Jo Hyun Bae, Sung Woo Lim, Yun Ah Kim, Yong Jae Ko, Ji Chang Lee
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Publication number: 20200126918Abstract: A method of manufacturing an electronic device. For example and without limitation, various aspects of the present disclosure provide a method of manufacturing an electronic device that comprises a die comprising a circuit side and a second die side opposite the circuit side, a through hole in the die that extends between the second side of the die and the circuit side of the die, an insulating layer coupled to the inner wall of the through hole, a through electrode inside of the insulating layer, a dielectric layer coupled to the second side of the die, and a conductive pad coupled to the through electrode. The through electrode and the insulating layer may, for example, extend substantially the same distance from the second side of the die.Type: ApplicationFiled: September 9, 2019Publication date: April 23, 2020Inventors: Won Chul Do, Yong Jae Ko
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Patent number: 10410967Abstract: An electronic device. For example and without limitation, various aspects of the present disclosure provide an electronic device that comprises a die comprising a circuit side and a second die side opposite the circuit side, a through hole in the die that extends between the second side of the die and the circuit side of the die, an insulating layer coupled to the inner wall of the through hole, a through electrode inside of the insulating layer, a dielectric layer coupled to the second side of the die, and a conductive pad coupled to the through electrode. The through electrode and the insulating layer may, for example, extend substantially the same distance from the second side of the die.Type: GrantFiled: April 13, 2018Date of Patent: September 10, 2019Assignee: Amkor Technology, Inc.Inventors: Won Chul Do, Yong Jae Ko
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Patent number: 9947623Abstract: A semiconductor device. For example and without limitation, various aspects of the present disclosure provide a semiconductor device that comprises a semiconductor die comprising an inactive die side and an active die side opposite the inactive die side, a through hole in the semiconductor die that extends between the inactive die side and the active die side where the through hole comprises an inner wall, an insulating layer coupled to the inner wall of the through hole, a through electrode inside of the insulating layer, a dielectric layer coupled to the inactive die side, and a conductive pad coupled to the through electrode.Type: GrantFiled: August 29, 2016Date of Patent: April 17, 2018Assignee: AMKOR TECHNOLOGY, INC.Inventors: Won Chul Do, Yong Jae Ko
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Patent number: 9431323Abstract: To form a semiconductor device, a through electrode is formed in a semiconductor die, and a dielectric layer is then formed to cover the through electrode. The dielectric layer has an opening by being partially etched to allow the through electrode to protrude to the outside, or has a thickness thinner overall so as to allow the through electrode to protrude to the outside. Subsequently, a conductive pad is formed on the through electrode protruding to the outside through the dielectric layer by using an electroless plating method.Type: GrantFiled: February 5, 2015Date of Patent: August 30, 2016Inventors: Won Chul Do, Yong Jae Ko
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Patent number: 8981572Abstract: To form a semiconductor device, a through electrode is formed in a semiconductor die, and a dielectric layer is then formed to cover the through electrode. The dielectric layer has an opening by being partially etched to allow the through electrode to protrude to the outside, or has a thickness thinner overall so as to allow the through electrode to protrude to the outside. Subsequently, a conductive pad is formed on the through electrode protruding to the outside through the dielectric layer by using an electroless plating method.Type: GrantFiled: September 4, 2013Date of Patent: March 17, 2015Inventors: Won Chul Do, Yong Jae Ko
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Patent number: 8900995Abstract: A semiconductor device and a manufacturing method thereof are provided. In one embodiment of the manufacturing method of the semiconductor device, a through electrode is formed on a semiconductor die, and a dielectric layer such as a photopolymer is coated on the through electrode to cover the through electrode. Under exposure is performed on the dielectric layer, thereby partially removing the dielectric layer by development. As a result, a top end of the through electrode is exposed to the outside or protrudes through the dielectric layer. The dielectric layer remaining on the top end of the through electrode may be removed by performing a plasma descum process, if needed.Type: GrantFiled: June 26, 2013Date of Patent: December 2, 2014Inventors: Won Chul Do, Yeon Seung Jung, Yong Jae Ko
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Patent number: 8552548Abstract: To form a semiconductor device, a through electrode is formed in a semiconductor die, and a dielectric layer is then formed to cover the through electrode. The dielectric layer has an opening by being partially etched to allow the through electrode to protrude to the outside, or has a thickness thinner overall so as to allow the through electrode to protrude to the outside. Subsequently, a conductive pad is formed on the through electrode protruding to the outside through the dielectric layer by using an electroless plating method.Type: GrantFiled: November 29, 2011Date of Patent: October 8, 2013Assignee: Amkor Technology, Inc.Inventors: Won Chul Do, Yong Jae Ko
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Patent number: 8487445Abstract: A semiconductor device and a manufacturing method thereof are provided. In one embodiment of the manufacturing method of the semiconductor device, a through electrode is formed on a semiconductor die, and a dielectric layer such as a photopolymer is coated on the through electrode to cover the through electrode. Under exposure is performed on the dielectric layer, thereby partially removing the dielectric layer by development. As a result, a top end of the through electrode is exposed to the outside or protrudes through the dielectric layer. The dielectric layer remaining on the top end of the through electrode may be removed by performing a plasma descum process, if needed.Type: GrantFiled: October 5, 2010Date of Patent: July 16, 2013Assignee: Amkor Technology, Inc.Inventors: Won Chul Do, Yeon Seung Jung, Yong Jae Ko