Patents by Inventor Yong-Ji Mao

Yong-Ji Mao has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • STRUCTURE OF CAPACITOR
    Publication number: 20150349049
    Abstract: A capacitor including a substrate, a conductive layer, a middle dielectric material layer, a first dielectric material layer, and a second dielectric material layer is provided. The conductive layer includes a first electrode and a second electrode, and the conductive layer is located over the substrate. The middle dielectric material layer is located between the first electrode and the second electrode. The first dielectric material layer is located between the middle dielectric material layer and the first electrode. The second dielectric material layer is located between the middle dielectric material layer and the second electrode. The dielectric constant of the middle dielectric material layer is different from the dielectric constants of the first dielectric material layer and the second dielectric material layer.
    Type: Application
    Filed: July 29, 2015
    Publication date: December 3, 2015
    Inventor: Yong-Ji Mao
  • Structure of capacitor
    Patent number: 9202861
    Abstract: A capacitor including a substrate, a conductive layer, a middle dielectric material layer, a first dielectric material layer, and a second dielectric material layer is provided. The conductive layer includes a first electrode and a second electrode, and the conductive layer is located over the substrate. The middle dielectric material layer is located between the first electrode and the second electrode. The first dielectric material layer is located between the middle dielectric material layer and the first electrode. The second dielectric material layer is located between the middle dielectric material layer and the second electrode. The dielectric constant of the middle dielectric material layer is different from the dielectric constants of the first dielectric material layer and the second dielectric material layer.
    Type: Grant
    Filed: July 29, 2015
    Date of Patent: December 1, 2015
    Assignee: United Microelectronics Corp.
    Inventor: Yong-Ji Mao
  • Structure of capacitor and fabrication method thereof
    Patent number: 9136317
    Abstract: A capacitor including a substrate, a conductive layer, a middle dielectric material layer, a first dielectric material layer, and a second dielectric material layer is provided. The conductive layer includes a first electrode and a second electrode, and the conductive layer is located over the substrate. The middle dielectric material layer is located between the first electrode and the second electrode. The first dielectric material layer is located between the middle dielectric material layer and the first electrode. The second dielectric material layer is located between the middle dielectric material layer and the second electrode. The dielectric constant of the middle dielectric material layer is different from the dielectric constants of the first dielectric material layer and the second dielectric material layer.
    Type: Grant
    Filed: June 19, 2014
    Date of Patent: September 15, 2015
    Assignee: United Microelectronics Corp.
    Inventor: Yong-Ji Mao