Abstract: An optical gene biosensor is disclosed. The optical gene biosensor includes a substrate; a molecular beacon anchored to the substrate, wherein the molecular beacon includes an oligonucleotide specifically binding to a target nucleic acid molecule and a first compound bound to a first terminal of the oligonucleotide; an optical marker specifically binding to the first compound, wherein the optical marker is configured to retro-reflect irradiated light; a light source for irradiating the optical marker with light; and a light-receiver for receiving light retro-reflected from the optical marker. The optical gene biosensor may perform accurate quantitative analysis of a target nucleic acid molecule using both non-spectral and spectral light sources.

Abstract: A lithography metrology method is provided. Focus sensitivity data and dose sensitivity data of sample patterns to be formed on a substrate are acquired. At least one focus pattern selected in descending order of focus sensitivity from among the acquired focus sensitivity data of the sample patterns is determined. At least one low-sensitivity focus pattern in ascending order of the focus sensitivity from among the acquired dose sensitivity data of the sample patterns is selected, and at least one dose pattern selected in descending order of dose sensitivity from among the at least one low-sensitivity focus pattern is determined. A split substrate having a plurality of chip regions is prepared. A plurality of focus split patterns having a shape corresponding to the at least one focus pattern and a plurality of dose split patterns having a shape corresponding to the at least one dose pattern in the plurality of chip regions are formed.

Abstract: A method of detecting focus shift in a lithography process, a method of analyzing an error of a transferred pattern using the same, and a method of manufacturing a semiconductor device using the methods are provided. The focus shift detecting method of a lithography process comprises generating a first contour band of a mask pattern between a first focus and a second focus, generating a second contour of the mask pattern between the first focus and a third focus, and determining whether focus shift of the mask pattern occurs using an intersection of the first contour band and the second contour band.

Abstract: A lithography metrology method is provided. Focus sensitivity data and dose sensitivity data of sample patterns to be formed on a substrate are acquired. At least one focus pattern selected in descending order of focus sensitivity from among the acquired focus sensitivity data of the sample patterns is determined. At least one low-sensitivity focus pattern in ascending order of the focus sensitivity from among the acquired dose sensitivity data of the sample patterns is selected, and at least one dose pattern selected in descending order of dose sensitivity from among the at least one low-sensitivity focus pattern is determined. A split substrate having a plurality of chip regions is prepared. A plurality of focus split patterns having a shape corresponding to the at least one focus pattern and a plurality of dose split patterns having a shape corresponding to the at least one dose pattern in the plurality of chip regions are formed.

Abstract: A method of detecting focus shift in a lithography process, a method of analyzing an error of a transferred pattern using the same, and a method of manufacturing a semiconductor device using the methods are provided. The focus shift detecting method of a lithography process comprises generating a first contour band of a mask pattern between a first focus and a second focus, generating a second contour of the mask pattern between the first focus and a third focus, and determining whether focus shift of the mask pattern occurs using an intersection of the first contour band and the second contour band.

Abstract: Provided are a system for analyzing a mask topography, which can reduce calculation time and increase calculation accuracy in consideration of a mask topography effect, and a method of forming an image using the system. The system and method simultaneously obtains a first electric field using a Kirchhoff method without considering a pitch formed on a mask and obtains a second electric field using an electromagnetic field analysis method considering the pitch, and then determines a third electric field on a pupil surface of a projection lens by combining the first electric field and the second electric field of forming an image, so as to calculate the image of an optical lithography system which includes an illumination system and a projection optical system and to which the projection lens belongs.

Abstract: Provided are a compensating mask, a multi-optical system using the compensating mask, and a method of compensating for a 3-dimensional (3-D) mask effect using the compensating mask. Methods of compensating for a 3-D mask effect using a compensating mask may include generating a first kernel corresponding to a normal mask used for forming a minute pattern, generating a second kernel corresponding to a compensating mask, mixing the first kernel corresponding to the normal mask with the second kernel corresponding to the compensating mask, and generating a multi-optical system kernel corresponding to mixing the first kernel and the second kernel.

Abstract: Provided are a compensating mask, a multi-optical system using the compensating mask, and a method of compensating for a 3-dimensional (3-D) mask effect using the compensating mask. Methods of compensating for a 3-D mask effect using a compensating mask may include generating a first kernel corresponding to a normal mask used for forming a minute pattern, generating a second kernel corresponding to a compensating mask, mixing the first kernel corresponding to the normal mask with the second kernel corresponding to the compensating mask, and generating a multi-optical system kernel corresponding to mixing the first kernel and the second kernel.

Abstract: An illumination control module, which enables one diffraction optical element (DOE) to be applied to various photolithography processes, and a diffraction illumination system and a photolithography system including the same are provided. The illumination control module includes a convex-ring-shaped upper lens, and a concave-ring-shaped lower lens.

Abstract: Provided are a system for analyzing a mask topography, which can reduce calculation time and increase calculation accuracy in consideration of a mask topography effect, and a method of forming an image using the system. The system and method simultaneously obtains a first electric field using a Kirchhoff method without considering a pitch formed on a mask and obtains a second electric field using an electromagnetic field analysis method considering the pitch, and then determines a third electric field on a pupil surface of a projection lens by combining the first electric field and the second electric field of forming an image, so as to calculate the image of an optical lithography system which includes an illumination system and a projection optical system and to which the projection lens belongs.

Abstract: Provided are a compensating mask, a multi-optical system using the compensating mask, and a method of compensating for a 3-dimensional (3-D) mask effect using the compensating mask. Methods of compensating for a 3-D mask effect using a compensating mask may include generating a first kernel corresponding to a normal mask used for forming a minute pattern, generating a second kernel corresponding to a compensating mask, mixing the first kernel corresponding to the normal mask with the second kernel corresponding to the compensating mask, and generating a multi-optical system kernel corresponding to mixing the first kernel and the second kernel.

Abstract: A method of forming an image contour for predicting a pattern image formed on a wafer from a layout of a semiconductor device includes: forming a basic layout for a semiconductor device; performing an optical proximity effect correction (OPC) on the basic layout to form an OPC layout; defining nonlinear regions and linear regions of the basic layout; emulating the nonlinear regions of the basic layout using the OPC layout to form an image contour of the nonlinear regions; determining the linear regions of the basic layout as an image contour of the linear regions; and combining the image contour of the nonlinear regions and image contour of the linear regions to form an image contour of the entire semiconductor device.

Abstract: A high precision temperature detecting circuit is disclosed. The temperature detecting circuit includes a first voltage source circuit for generating a voltage VPN that has a negative temperature coefficient using a work function difference of gate electrodes of two field effect transistors, a second voltage source circuit for generating a reference voltage VREF1 that is independent of temperature change using a work function difference of gate electrodes of two or more field effect transistors, an impedance conversion circuit for converting impedance of the voltage VPN and the reference voltage VREF1, and a subtracter circuit, to which the impedance converted voltages VPN and VREF1 are provided, for obtaining a difference voltage between the voltage VPN and the reference voltage VREF1, and for amplifying the difference voltage.

Abstract: Disclosed is a synthetic fiber, including hollow sphere-shaped particles each formed of any one selected from among an inorganic material, an organic material, or combinations thereof, which is advantageous in terms of a low specific gravity, thereby effectively solving conventional wearing problems.