Abstract: Double patterning techniques described herein may reduce corner rounding, etch loading, and/or other defects that might otherwise arise during formation of a deep trench isolation (DTI) structure in a pixel array. The double patterning techniques include forming a first set of trenches in a first direction and forming a second set of trenches in a second direction in a plurality of patterning operations such that minimal to no etch loading and/or corner rounding is present at and/or near the intersections of the first set of trenches and the second set of trenches.

Abstract: Implantation mask formation techniques described herein include increasing an initial aspect ratio of a pattern in an implantation mask by non-lithography techniques, which may include forming a resist hardening layer on the implantation mask. The pattern may be formed by photolithography techniques to the initial aspect ratio that reduces or minimizes the likelihood of pattern collapse during formation of the pattern. Then, the resist hardening layer is formed on the implantation mask to increase the height of the pattern and reduce the width of the pattern, which increases the aspect ratio between the height of the openings or trenches and the width of the openings or trenches of the pattern. In this way, the pattern in the implantation mask may be formed to an ultra-high aspect ratio in a manner that reduces or minimizes the likelihood of pattern collapse during formation of the pattern.

Abstract: Implantation mask formation techniques described herein include increasing an initial aspect ratio of a pattern in an implantation mask by non-lithography techniques, which may include forming a resist hardening layer on the implantation mask. The pattern may be formed by photolithography techniques to the initial aspect ratio that reduces or minimizes the likelihood of pattern collapse during formation of the pattern. Then, the resist hardening layer is formed on the implantation mask to increase the height of the pattern and reduce the width of the pattern, which increases the aspect ratio between the height of the openings or trenches and the width of the openings or trenches of the pattern. In this way, the pattern in the implantation mask may be formed to an ultra-high aspect ratio in a manner that reduces or minimizes the likelihood of pattern collapse during formation of the pattern.

Abstract: A method of fabricating a semiconductor device includes determining a concentration of a byproduct in a photoresist composition. A photoresist layer is formed over a substrate using the photoresist composition when the concentration of the byproduct is below a threshold value. A photoresist pattern is formed in the photoresist layer exposing a portion of the substrate, and an operation is performed on the exposed portion of the substrate.

Abstract: Double patterning techniques described herein may reduce corner rounding, etch loading, and/or other defects that might otherwise arise during formation of a deep trench isolation (DTI) structure in a pixel array. The double patterning techniques include forming a first set of trenches in a first direction and forming a second set of trenches in a second direction in a plurality of patterning operations such that minimal to no etch loading and/or corner rounding is present at and/or near the intersections of the first set of trenches and the second set of trenches.

Abstract: Implantation mask formation techniques described herein include increasing an initial aspect ratio of a pattern in an implantation mask by non-lithography techniques, which may include forming a resist hardening layer on the implantation mask. The pattern may be formed by photolithography techniques to the initial aspect ratio that reduces or minimizes the likelihood of pattern collapse during formation of the pattern. Then, the resist hardening layer is formed on the implantation mask to increase the height of the pattern and reduce the width of the pattern, which increases the aspect ratio between the height of the openings or trenches and the width of the openings or trenches of the pattern. In this way, the pattern in the implantation mask may be formed to an ultra-high aspect ratio in a manner that reduces or minimizes the likelihood of pattern collapse during formation of the pattern.

Abstract: Implantation mask formation techniques described herein include increasing an initial aspect ratio of a pattern in an implantation mask by non-lithography techniques, which may include forming a resist hardening layer on the implantation mask. The pattern may be formed by photolithography techniques to the initial aspect ratio that reduces or minimizes the likelihood of pattern collapse during formation of the pattern. Then, the resist hardening layer is formed on the implantation mask to increase the height of the pattern and reduce the width of the pattern, which increases the aspect ratio between the height of the openings or trenches and the width of the openings or trenches of the pattern. In this way, the pattern in the implantation mask may be formed to an ultra-high aspect ratio in a manner that reduces or minimizes the likelihood of pattern collapse during formation of the pattern.

Abstract: Double patterning techniques described herein may reduce corner rounding, etch loading, and/or other defects that might otherwise arise during formation of a deep trench isolation (DTI) structure in a pixel array. The double patterning techniques include forming a first set of trenches in a first direction and forming a second set of trenches in a second direction in a plurality of patterning operations such that minimal to no etch loading and/or corner rounding is present at and/or near the intersections of the first set of trenches and the second set of trenches.

Abstract: Implantation mask formation techniques described herein include increasing an initial aspect ratio of a pattern in an implantation mask by non-lithography techniques, which may include forming a resist hardening layer on the implantation mask. The pattern may be formed by photolithography techniques to the initial aspect ratio that reduces or minimizes the likelihood of pattern collapse during formation of the pattern. Then, the resist hardening layer is formed on the implantation mask to increase the height of the pattern and reduce the width of the pattern, which increases the aspect ratio between the height of the openings or trenches and the width of the openings or trenches of the pattern. In this way, the pattern in the implantation mask may be formed to an ultra-high aspect ratio in a manner that reduces or minimizes the likelihood of pattern collapse during formation of the pattern.