Abstract: A display device that is divided into a plurality of pixel regions including first, second, and third pixel regions includes a first color filter occupying the first pixel region and a second color filter occupying the second pixel region, which neighbors the first pixel region, and overlapping the first color filter. The first color filter is disposed on the second color filter in the overlapping region of the first color filter and the second color filter, and a central line of the overlapping region deviates from the boundary line between the first pixel region and the second pixel region.

Abstract: A liquid crystal display includes; a plurality of pixels, each of which comprises a switching element having a control terminal and an input terminal connected to a corresponding gate line of a plurality of gate lines and a corresponding data line of a plurality of data lines, respectively, at least one test pixel comprising at least one test switching element having a control terminal connected to a corresponding at least one gate line of a plurality of gate lines, and a sensing unit which measures a leakage current flowing through the test pixel and to control compensation driving of a threshold voltage of a switching element of a pixel according to the measured leakage current.

Abstract: A display substrate includes a plurality of transistors, a plurality of color filters, a plurality of pixel electrodes, a plurality of supporting members, and a plurality of filling members. The transistors are connected to a plurality of gate lines extending in a first direction on a base substrate and a plurality of data lines extending in a second direction crossing the first direction. The color filters are disposed over the transistors, and have a plurality of holes. The pixel electrodes are disposed on the color filters, and electrically connect to the transistors. The supporting members are disposed on the color filters, and maintain a gap between the base substrate and a substrate opposing the base substrate. The filling members are comprised of the same material as the supporting members, and fill the holes.

Abstract: A thin film transistor (“TFT”) array panel according to an exemplary embodiment of the present invention includes a substrate, a first storage electrode formed on the substrate, a first TFT formed on the substrate and separated from the first storage electrode, a first insulating layer formed on the first storage electrode and the first TFT and having a first opening disposed on the first storage electrode, a pixel electrode connected to the first TFT and overlapping the first storage electrode in the first opening, and a second insulating layer disposed between the first storage electrode and the pixel electrode in the first opening, wherein at least a portion of the boundary of the pixel electrode overlaps the first storage electrode and is disposed in the first opening. Accordingly, storage appropriate capacitance is ensured and a reduction of the aperture ratio may be decreased.

Abstract: A thin film transistor and a liquid crystal display including the same include a gate electrode including an uneven pattern on at least one side defining the gate electrode, a source electrode partially overlapping the gate electrode, and a drain electrode separated from the source electrode and partially overlapping the gate electrode.

Abstract: A liquid crystal display (LCD) capable of preventing light leakage includes first and second gate lines which extend in a horizontal direction, a data line which is insulated from the first and second gate lines and crosses the first and second gate lines, first and second thin film transistors (TFTs) which are respectively connected to the first and second gate lines and are connected to the data line, and a pixel electrode which extends in zigzag fashion at an inclination to the first and second gate lines and is divided into a first area and a second area in a direction in which the pixel electrode extends.

Abstract: A thin film transistor substrate, wherein the moving area of electrons between source and drain electrodes of a thin film transistor (TFT) is minimized, the moving distance of electrons is increased, and the sizes of capacitors defined by a gate electrode together with the respective source and drain electrodes are identical to each other so that an off current generated when the TFT is off can be minimized; a method of manufacturing the thin film transistor substrate; and a mask for manufacturing the thin film transistor substrate. Accordingly, it is possible to minimize an off current induced due to a phenomenon of electron trapping by light.