Abstract: There is provided a white light emitting device that prevents a red phosphor from resorbing wavelength-converted light to improve white luminous efficiency. A white light emitting device according to an aspect of the invention includes a package body; at least two LED chips mounted to the package body and emitting excitation light; and a molding unit including phosphors, absorbing the excitation light and emitting wavelength-converted light, in regions of the molding unit divided according to the LED chips and molding the LED chips. According to the aspect of the invention, since the phosphor for converted red light can be prevented from resorbing light generated from other regions of the molding unit, the white light emitting device that can improve white luminous efficiency or control color rendering and color temperature by adjusting a mixing ratio of converted light for white light emission.

Abstract: A method of managing files of an image forming apparatus having a display unit and connectable to at least one storage medium including a document box is provided. The method includes connecting the storage medium to the image forming apparatus, determining if an information file corresponding to document box exists in the storage medium, searching for at least one file stored in the at least one document box corresponding to the information file in response to determining that the information file exists, and displaying at least one of the searched file and the document box on the display unit.

Abstract: An omni-directional reflector having a transparent conductive low-index layer formed of conductive nanorods and a light emitting diode utilizing the omni-directional reflector are provided. The omni-directional reflector includes: a transparent conductive low-index layer formed of conductive nanorods; and a reflective layer formed of a metal.

Abstract: There is provided a white light emitting device that prevents a red phosphor from resorbing wavelength-converted light to improve white luminous efficiency. A white light emitting device according to an aspect of the invention includes a package body; at least two LED chips mounted to the package body and emitting excitation light; and a molding unit including phosphors, absorbing the excitation light and emitting wavelength-converted light, in regions of the molding unit divided according to the LED chips and molding the LED chips. According to the aspect of the invention, since the phosphor for converted red light can be prevented from resorbing light generated from other regions of the molding unit, the white light emitting device that can improve white luminous efficiency or control color rendering and color temperature by adjusting a mixing ratio of converted light for white light emission.

Abstract: A light emitting device having a monolithic protection element and a method of fabricating the light emitting device are provided. The light emitting device includes: a light emitter having a cathode and an anode; and the resistive protection element connected to the light emitter in parallel through the cathode and the anode. Here, a resistance Rs of the resistive protection element has a value between a forward resistance Rf and a reverse resistance Rr of a current of the light emitter.

Abstract: A jam removing method and printer using toner a save mode includes detecting a paper jam on a printing route, confirming whether a dot count value of a corresponding image exceeds a preset boundary value, and converting a printing mode into the toner save mode when the dot count value exceeds the boundary value. The paper jam by an image density is prevented from repeating, and successive paper jam is prevented from occurring, user's convenience may be enhanced, and the toner may not be wasted.

Abstract: Provided is a method of fabricating a laser diode including a lower Al-containing semiconductor material layer, a active layer, and an upper Al-containing semiconductor material layer. The method includes thermally cleaning the inside of a deposition reactor in which a substrate on which the lower Al-containing semiconductor material layer is stacked is loaded. During the thermal cleaning process, the inside of the deposition reactor is thermally treated at a predetermined temperature in an atmosphere of a gas mixture of AsH3 and H2 that is injected into the deposition reactor.

Abstract: A light emitting device having a monolithic protection element and a method of fabricating the light emitting device are provided. The light emitting device includes: a light emitter having a cathode and an anode; and the resistive protection element connected to the light emitter in parallel through the cathode and the anode. Here, a resistance Rs of the resistive protection element has a value between a forward resistance Rf and a reverse resistance Rr of a current of the light emitter.

Abstract: An omni-directional reflector having a transparent conductive low-index layer formed of conductive nanorods and a light emitting diode utilizing the omni-directional reflector are provided. The omni-directional reflector includes: a transparent conductive low-index layer formed of conductive nanorods; and a reflective layer formed of a metal.

Abstract: A jam removing method and printer using toner a save mode includes detecting a paper jam on a printing route, confirming whether a dot count value of a corresponding image exceeds a preset boundary value, and converting a printing mode into the toner save mode when the dot count value exceeds the boundary value. The paper jam by an image density is prevented from repeating, and successive paper jam is prevented from occurring, user's convenience may be enhanced, and the toner may not be wasted.

Abstract: An apparatus to generate a character image includes a character image generating unit to generate a character image from a scalable font according to information for generating the character image from the scalable font, a generation frequency list storing unit to store the number of times that the scalable font has been generated as the character image by the character image generating unit, a scalable font converting unit to convert the scalable font into a bitmap font, when the number of times stored in the generation frequency list exceeds a predetermined limit number of times, and a converted font storing unit to store the bitmap font converted by the scalable font converting unit. Accordingly, the scalable font is generated as the character image according to a method of processing a character print command using a bitmap font without mathematical processing to provide a font of a high print quality.

Abstract: A halftone processing apparatus and a method thereof is provided to store halftone tables of different sizes and perform different halftone processes using the halftone tables of different sizes according to the type input image.

Abstract: A GaN series surface-emitting laser diode and a method for manufacturing the same are provided. The GaN series surface-emitting laser diode includes: an active layer; p-type and n-type material layers on the opposite sides of the active layer; a first-distributed Bragg reflector (DBR) layer formed on the n-type material layer; an n-type electrode connected to the active layer through the n-type material layer such that voltage is applied to the active layer for lasing; a spacer formed on the p-type material layer with a laser output window in a portion aligned with the first DBR layer, the spacer being thick enough to enable holes to effectively migrate to a center portion of the active layer; a second DBR layer formed on the laser output window; and a p-type electrode connected to the active layer through the p-type material layer such that voltage is applied to the active layer for lasing.

Abstract: Provided are a printing system and printing method, which enable a host to set a security function in a document and then to transmit the document to a printer and enable the printer to print only a document whose security function is cancelled. The printing system comprises a host, which encrypts data that is to be printed by using encryption keys when a print command is received; a movable storage medium, which is connected to the host and stores the encryption keys; and a printer, which is connected to the movable storage medium, decrypts the encrypted data transmitted from the host by using the encryption keys stored in the movable storage medium, and then prints the decrypted data.

Abstract: Provided is a method of fabricating a laser diode including a lower Al-containing semiconductor material layer, a active layer, and an upper Al-containing semiconductor material layer. The method includes thermally cleaning the inside of a deposition reactor in which a substrate on which the lower Al-containing semiconductor material layer is stacked is loaded. During the thermal cleaning process, the inside of the deposition reactor is thermally treated at a predetermined temperature in an atmosphere of a gas mixture of AsH3 and H2 that is injected into the deposition reactor.

Abstract: A GaN series surface-emitting laser diode and a method for manufacturing the same are provided. The GaN series surface-emitting laser diode includes: an active layer; p-type and n-type material layers on the opposite sides of the active layer; a first-distributed Bragg reflector (DBR) layer formed on the n-type material layer; an n-type electrode connected to the active layer through the n-type material layer such that voltage is applied to the active layer for lasing; a spacer formed on the p-type material layer with a laser output window in a portion aligned with the first DBR layer, the spacer being thick enough to enable holes to effectively migrate to a center portion of the active layer; a second DBR layer formed on the laser output window; and a p-type electrode connected to the active layer through the p-type material layer such that voltage is applied to the active layer for lasing.

Abstract: A GaN series surface-emitting laser diode and a method for manufacturing the same are provided. The GaN series surface-emitting laser diode includes: an active layer; p-type and n-type material layers on the opposite sides of the active layer; a first-distributed Bragg reflector (DBR) layer formed on the n-type material layer; an n-type electrode connected to the active layer through the n-type material layer such that voltage is applied to the active layer for lasing; a spacer formed on the p-type material layer with a laser output window in a portion aligned with the first DBR layer, the spacer being thick enough to enable holes to effectively migrate to a center portion of the active layer; a second DBR layer formed on the laser output window; and a p-type electrode connected to the active layer through the p-type material layer such that voltage is applied to the active layer for lasing.

Abstract: A semiconductor light emitting device including means for reducing strain and carrier overflow caused by injection of a number of carriers in semiconductor light emitting devices using GaN is provided. The semiconductor light emitting device includes a multi-quantum barrier formed by depositing an AlGaN/GaN double layer a predetermined number of times, or a strain-compensating multiple quantum barrier formed at either the upper or lower sides of an active layer by depositing an AlGaN/InGaN double layer a predetermined number of times, and does not need a p-type clad layer.

Abstract: A fast printing apparatus and method thereof include a host converting job data for a print job into a printing code and analyzing and processing the printing code to produce a display list, and a printer temporarily storing the display list input from the host, producing bit map data by processing the temporarily stored display list, and printing a bit map image corresponding to the produced bit map data. With the use of the fast printing apparatus and method thereof, it is possible to increase a printing speed of the printer.

Abstract: A GaN series surface-emitting laser diode and a method for manufacturing the same are provided. The GaN series surface-emitting laser diode includes: an active layer; p-type and n-type material layers on opposite sides of the active layer; a first distributed Bragg reflector (DBR) layer formed on the n-type material layer; an n-type electrode connected to the active layer through the n-type material layer such that voltage is applied to the active layer for lasing; a spacer formed on the p-type material layer with a laser output window in a portion aligned with the first DBR layer, the spacer being thick enough to enable holes to effectively migrate to a center portion of the active layer; a second BDR layer formed on the laser output window; and a p-type electrode connected to the active layer through the p-type material layer such that voltage is applied to the active layer for lasing.